CN1720614A - 制造显示器的方法 - Google Patents

制造显示器的方法 Download PDF

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CN1720614A
CN1720614A CNA2003801048262A CN200380104826A CN1720614A CN 1720614 A CN1720614 A CN 1720614A CN A2003801048262 A CNA2003801048262 A CN A2003801048262A CN 200380104826 A CN200380104826 A CN 200380104826A CN 1720614 A CN1720614 A CN 1720614A
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substrate
display
heat zone
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etching
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H·里夫卡
S·库伊佩
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Koninklijke Philips NV
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Abstract

公开了制造显示器，特别是柔性显示器的方法。使用具有小开口(2)的基板(1)，使基板具有多孔性并在基板(1)中形成沟槽。可除去的层(3)附着于基板(1)上。在可除去的层(3)上沉积耐蚀刻和高温层(4)，并且在所述耐蚀刻和高温层(4)上处理显示器。通过穿过在基板(1)中的开口(2)的蚀刻除去可除去的层(3)，并且基板可以重新使用。

Description

制造显示器的方法
发明领域
本发明涉及制造显示器的方法。
发明背景
显示器，特别是柔性显示器，是今后的需要。柔性显示器可用于例如消费产品的随意形状的显示器，如同PDA和电子书。例如，当漫步时允许从任何角度查看信息的圆形显示器作为广告标志是有趣的。柔性显示器的另一个应用范围涉及可卷起的显示器，例如，可以用于日报。
当前制造显示器的方法通常包括使用刚性和昂贵的基板。目前使用的普通材料是聚合物或薄玻璃。然而，如上所述，对于几个应用，要求柔性的、重量轻的显示器，这使其在生产期间难以使用刚性基板。
几种显示技术，例如，有源矩阵，要求高温来制造优质显示器。然而，当前透明的可弯曲的基板不能承受在加工期间必须的高温。例如，由聚合物和玻璃制成的基板不能很好地承受250℃以上的加工温度。
EP1024523公开了制造薄膜半导体器件例如太阳能电池和发光二极管的方法。使用适合全部高温处理的高质量的可再次使用的基板。在可再次使用的基板表面上形成的多孔层上生长半导体膜。在附着于支撑体之后，通过湿蚀刻多孔层从基板上卸下完成的薄膜半导体器件。
然而，在根据EP1024523的方法中，为了从基板上分离薄膜的分离步骤是关键步骤。根据基板的尺寸，需要一种允许进行几厘米的横向蚀刻以除去多孔层的方法。此外，该蚀刻工艺必须相对于其中的薄膜和半导体器件并且还相对于基板以选择性的方式除去多孔层。
根据EP1024523，蚀刻掩模仅防止制造的显示器的一侧受到蚀刻溶液的影响。在显示部件对蚀刻溶液敏感的情况下，不可能使用根据EP1024523的方法，因为在加工期间，蚀刻溶液总是接触显示器。
此外，根据EP1024523，必须进行横向蚀刻，以便从基板上脱除显示器。这种横向蚀刻难以进行，特别是在要处理的显示器的表面较大的情况下，因为这会限制化学溶液接近多孔层。此外，为了降低生产成本，小显示器也优选在大基板上制造，以便能够同时制造许多显示器。然而，由于要求的横向蚀刻的限制，根据EP1024523的方法不适合在大基板上生产几个小显示器。
另外，在EP1024523中公开的耐蚀刻支撑体优选由塑料或聚合物构成，因此不耐热。因此，如果处理要求高温，则必须在处理显示器之后才能使用支撑体。
发明概述
因此，本发明的目的是提供制造显示器，特别是柔性显示器的便宜的、简单的和可靠的方法，允许高温处理显示器以及通过蚀刻可除去的层而重新使用基板，不使蚀刻剂与显示器接触。
通过使用一种制造显示器的方法实现这些和其它目的，该方法包括：
-提供基板
-为所述基板沉积可除去的层，覆盖所述基板的至少一部分，该方法的特征在于：
-在所述可除去的层上沉积耐蚀刻和高温层，基本上覆盖所述可除去的层，
-在所述耐蚀刻和高温层的至少一部分上处理显示器，以及
-通过用蚀刻剂蚀刻而除去所述可除去的层，所述耐蚀刻和高温层防止蚀刻剂与所述显示器进行接触。
在导致本发明的研究工作中，开发了采用可重新使用的基板和可除去的层制造显示器的新方法。
本发明人令人惊讶地发现了沉积耐蚀刻和高温层覆盖可除去的层的方法，由此能够处理在耐蚀刻和高温层上的显示器，并且通过蚀刻可除去的层重新使用基板，而不使所述蚀刻剂与所述显示器接触。
由此，耐蚀刻和高温层的耐热性允许在可再次使用的基板上进行高温显示器处理，而不要求显示器部件与蚀刻剂接触。
如权利要求2中定义的方法与进行横向蚀刻的现有技术相比较，具有在更大的表面上同时进行蚀刻的优点，允许更迅速和均匀地蚀刻可除去的层。应当注意，不管耐蚀刻和高温层是否存在，均可实现使基板具有蚀刻开口的优点。
如权利要求3-6定义的方法具有硅/多晶硅是很耐用的材料，并且工艺步骤和设备容易得到的优点。
如权利要求7定义的方法具有可以以不同的形状制造显示器的优点。
参考在下文中介绍的实施方案本发明的这些和其它方案是显而易见并且得以阐明的。
附图简介
图1是根据本发明的方法的示意性的组成。
图2是根据本发明的基板、层和蚀刻开口的剖视图。
优选实施方案的描述
现在参考附图更详细地介绍本发明。
基板(1)在处理侧上具有由可除去的层(3)(非保形沉积)封闭的小蚀刻开口(2)。如果需要，可以接着采用平面化和退火(未示出)。必要的是继续沉积耐蚀刻和高温层(4)。在该耐蚀刻和高温层(4)上处理显示器。
完成显示器处理之后，通过在基板(1)中的蚀刻开口(2)进行湿蚀刻而从基板上释放显示器。蚀刻剂可以从基板的背面进入开口，并蚀刻在基板前面上的可除去的层。蚀刻剂由其上进行显示器处理的耐蚀刻和高温层(4)阻止。随后，分开显示器，并且如果需要的话进行保护处理。可以清洗并再次使用基板(1)。
这里使用的术语″基板″是指用于生产显示器的支撑体。基板构成在其上制造元件的在结构上稳定的材料。
这里使用的术语″蚀刻开口″是指在基板中的小孔，其使基板具有多孔性并在基板中形成沟槽，蚀刻剂能够穿过该沟槽。
这里使用的术语″可除去的层″是指封闭蚀刻开口的非保形沉积。可除去的层可由蚀刻剂溶解，并且当从基板上分离显示器时牺牲可除去的层。可除去的层还必须耐热。
这里使用的术语″耐蚀刻和高温层″是指坚固的耐热层，密封可除去的层并且不受蚀刻剂影响的蚀刻掩模。此外，在处理显示器期间不受高温影响。
这里使用的术语″蚀刻″是指材料起的反应和可溶解产物的形成。
这里使用的术语″蚀刻剂″是指能够蚀刻可除去的层但不能蚀刻耐蚀刻和高温层、不损伤显示器的溶液。
基板和蚀刻开口
用在根据本发明方法中的多孔可重新使用的基板可以由几种不同的方法构成。优选所述基板包括硅材料。也可以使用其它基板，例如钢或陶瓷，但是较少为人所知。
用在根据本发明的方法中的最优选的基板由多晶硅制成。可以任何尺寸得到多晶硅，因此可以制造真正的大显示器。通过双等离子体蚀刻法制造在基板中的蚀刻开口。
在加热炉中，在硅材料上生长1μm的二氧化硅(在1000℃下H2O/O2为88％/12％)。在该氧化物的正面(要处理的显示器一侧)上，涂覆光致抗蚀剂，用在一个方向中尺寸小于2μm的细线图形曝光和显影。光致抗蚀剂掩模用来在等离子体氧化物蚀刻器中蚀刻氧化物。然后，氧化物用作主掩模，蚀刻硅到大约40μm的深度。用氧等离子体(圆桶型)除去光致抗蚀剂，并进行50nm氧化。用LPCVD进行100nm SiN沉积。背面用光致抗蚀剂涂覆，用大的线或圆形(给出孔)图形曝光和显影。(使用线，但是圆形也应可行。线相对于正面上的线旋转90°。)再次蚀刻氧化物，然后蚀刻硅直到沟槽中的SiN。再次除去光致抗蚀剂，在140℃下在H3PO4/H2SO4中生长100nm二氧化硅并蚀刻SiN。然后沉积保护性LPCVD SIN。
用于获得根据本发明使用的基板的另一个成本有效的方法是在<110>硅晶片中的各向异性湿蚀刻。使用KOH溶液可以在<110>硅中蚀刻垂直沟槽。在晶片的正面上可以蚀刻宽度为1μm数量级的长沟槽。沟槽到沟槽的距离也可以选择为数量级1μm。更大的距离产生更坚固的基板，但是在完成显示器处理之后基板释放蚀刻的时间更长。能实现的沟槽的长度对宽度比取决于光刻步骤的精度。小沟槽不必完全通过晶片进行蚀刻，因为大沟槽可以从晶片的背面蚀刻会合小沟槽。
也可以在根据本发明的方法中使用市场上可买到的硅微滤网(microsieve)。这些滤网由附着于大孔隙的硅支撑体上的多微孔的氮化硅薄膜组成。使用湿和干蚀刻技术的组合制造它们。
也可以使用其他工艺获得用在根据本发明的方法中的基板，其中使用HF溶液和紫外光穿过硅晶片蚀刻孔。
优选基板采取平板的形式。如果需要特殊的显示器前面板，则基板可以具有相反的形状。可以考虑在显示器上的小透镜，特殊的输出(outcoupling)结构。也可以制造具有非平面的前或背板的显示器，例如，用于3D电视的具有特殊输出结构或透镜的显示器。
此外，基板可以具有能够传递到显示器上的高度剖面，分离之后在显示器上形成结构。由此，在根据本发明的方法中可以使用任何几何形状或尺寸的基板。
优选在涂覆可除去的层之后以垂直于可除去的层布置的方式形成蚀刻开口。然而，开口的布置不是本发明的要点，只要蚀刻剂能够穿过基板并接触可除去的层即可。
在本发明的另一个实施方案中，基板的一部分具有穿过基板的孔。在边缘最好没有开口形成，以有助于随后的显示器分离。
在本发明的优选实施方案中，在基板的上面提供具有较少开口完全穿过基板的沟槽图形。
优选的是，在前面上的小开口和几个更大的开口从背面通向小开口。
可除去的层的沉积
在穿孔基板上，在高压下进行5μm PECVD 300℃的SiO2沉积。这使得孔封闭达到2μm。可以使用的合适的可除去的层的其它例子是SiO2的LPCVD。A10以及一些金属也是合适的。例如，如果用溅射沉积或者也可以用PVD，则A1也应可行。
等离子体增强化学气相沉积(PECVD)是在较低温度下，使用一种或多种气体反应物在通过利用含有带电粒子的蒸气或等离子体而增强的晶片表面上形成固体绝缘或导电层的技术。
在带孔的基板中开口的封闭已经成功地经过试验。
基板的平面化
任选地，基板可以用例如SOG(施涂玻璃)或通过化学机械抛光而平面化。然而，剩余的凹陷相当小，所以平面化可以任选地被省略。
对于某些应用，基板可能还具有深度结构，在显示器上构成特殊形状。这可能对于例如在像素上构成微透镜用于更好的光输出是有用的。用该技术还可以在平面方向中获得更多的光输出。这对于弥补(有源矩阵)LCD显示器的观察角度问题是有用的。
基板最好在显示器工艺要求的最高温度下退火。在实例中，使用30min 800℃的N2退火。氧化物保持稳定。用于显示器处理的耐蚀刻和高温层
要点是进一步沉积坚固的、透明的耐高温和蚀刻的层。
在基板上，在625℃下沉积耐蚀刻和高温层、密封层、200nm LPCVD的Si3N4。合适的耐蚀刻和高温层的其它例子是氮化物和氧化硅/氮化硅的叠层，例如Si3N4和SiO2或SiON的叠层，或Si3N4和SiON的叠层，或SiO2和SiON的叠层，或Si3N4、SiO2和SiON的叠层。
在该层上，可以进行更进一步的显示器处理。最好，耐蚀刻层是坚固的、透明的和抗高温的。
低压化学气相沉积(LPCVD)是在低压和高温条件下，使用一种或多种气体反应物在晶片表面上形成固体绝缘或导电层的技术。
显示器处理
(处理取决于要求的显示并且不是本发明的要点)
最好，使用根据本发明的方法制造柔性显示器，特别是有源矩阵PolyLED/OLED和有源矩阵LCD显示器。
对于有源矩阵多晶硅PolyLED，这将意味着：用植入、结构化步骤、激光重结晶和互连处理晶体管。然后，可沉积ITO、PEDOT、PPV、阴极。然后粘结具有吸气剂的盖子，或者使用在上边具有强化层的薄膜封装。
分离显示器
通过蚀刻可除去的层从基板上分离经处理的显示器。
在7∶1的NH4F∶HF中，穿过在基板中的蚀刻开口的蚀刻除去PECVD氧化物。该蚀刻将蚀刻氧化物，而不蚀刻LPCVD Si3N4。显示器仍将附着于优选不形成开口的基板的边缘。然后，显示器从基板上切下/松脱，如果需要，在显示器前面上另外粘结或附加保护层，例如，透明塑料。
合适的蚀刻剂取决于必须蚀刻的材料以及不应该蚀刻的材料。对于SiO-SiN组合，还可以使用其它缓冲和非缓冲HF溶液。
由此，本发明提供了制造显示器的新的和改善的方法，使用了可再次使用的基板和可除去的层。根据本发明的方法允许高温处理和蚀刻可除去的层，而不使蚀刻剂接触显示器部件。
本发明的优选实施方案的描述绝不应该被认为是限制本发明的范围。当然，实施本发明的可供选择的方法，例如，用于类似于塑料电子器件中的非显示器应用、无源集成和MEMS(微机电系统)，也在本
发明的范围内。

Claims (18)

1.一种制造显示器的方法，包括：
-提供基板
-为所述基板沉积可除去的层，覆盖所述基板的至少一部分，特征在于
-在所述可除去的层上沉积耐蚀刻和高温层，基本上覆盖所述可除去的层，
-在所述耐蚀刻和高温层的至少一部分上处理显示器，以及
-通过用蚀刻剂进行蚀刻而除去所述可除去的层，所述耐蚀刻和高温层防止蚀刻剂与所述显示器进行接触。
2.根据权利要求1的方法，其中所述基板具有蚀刻开口，并且通过引导蚀刻剂通过所述蚀刻开口穿过基板而进行所述蚀刻。
3.根据权利要求1或2的方法，其中所述基板包括硅材料。
4.根据权利要求4的方法，其中所述基板包括多晶硅板。
5.根据权利要求4的方法，其中所述基板包括硅微滤网。
6.根据权利要求4的方法，其中所述基板包括硅晶片。
7.根据前面的权利要求中任一项的方法，其中所述基板具有可以传递到显示器上的高度剖面。
8.根据前面的权利要求中任一项的方法，其中所述耐蚀刻和高温层包括Si3N4。
9.根据前面的权利要求中任一项的方法，其中所述耐蚀刻和高温层包括Si3N4和SiO2的叠层。
10.根据前面的权利要求中任一项的方法，其中所述耐蚀刻和高温层包括SiON。
11.根据前面的权利要求中任一项的方法，其中所述耐蚀刻和高温层包括Si3N4和SiON的叠层。
12.根据前面的权利要求中任一项的方法，其中所述耐蚀刻和高温层包括SiO2和SiON的叠层。
13.根据前面的权利要求中任一项的方法，其中所述耐蚀刻和高温层包括Si3N4、SiO2和SiON的叠层。
14.根据前面的权利要求中任一项的方法，其中所述可除去的层包括SiO2。
15.根据前面的权利要求中任一项的方法，其中所述蚀刻剂包括HF溶液。
16.根据前面的权利要求中任一项的方法，其中所述蚀刻剂包括NH4F：HF。
17.使用根据前面的权利要求中任一项的方法可得到的显示器。
18.根据前面的权利要求中任一项的用于非显示器应用例如塑料电子器件、MEMS和无源集成的方法。
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