JP2007123859A5 - - Google Patents
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- Publication number
- JP2007123859A5 JP2007123859A5 JP2006262010A JP2006262010A JP2007123859A5 JP 2007123859 A5 JP2007123859 A5 JP 2007123859A5 JP 2006262010 A JP2006262010 A JP 2006262010A JP 2006262010 A JP2006262010 A JP 2006262010A JP 2007123859 A5 JP2007123859 A5 JP 2007123859A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- element groups
- insulating film
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 5
- 238000006243 chemical reaction Methods 0.000 claims 3
- 239000004743 Polypropylene Substances 0.000 claims 2
- 229920000728 polyester Polymers 0.000 claims 2
- -1 polypropylene Polymers 0.000 claims 2
- 229920001155 polypropylene Polymers 0.000 claims 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims 2
- 239000004800 polyvinyl chloride Substances 0.000 claims 2
- 229920002620 polyvinyl fluoride Polymers 0.000 claims 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006262010A JP5063066B2 (ja) | 2005-09-30 | 2006-09-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005288141 | 2005-09-30 | ||
JP2005288141 | 2005-09-30 | ||
JP2006262010A JP5063066B2 (ja) | 2005-09-30 | 2006-09-27 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007123859A JP2007123859A (ja) | 2007-05-17 |
JP2007123859A5 true JP2007123859A5 (zh) | 2009-10-22 |
JP5063066B2 JP5063066B2 (ja) | 2012-10-31 |
Family
ID=38147303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006262010A Expired - Fee Related JP5063066B2 (ja) | 2005-09-30 | 2006-09-27 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5063066B2 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009260313A (ja) | 2008-03-26 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Soi基板の作製方法及び半導体装置の作製方法 |
KR101596698B1 (ko) * | 2008-04-25 | 2016-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치 제조 방법 |
KR101582503B1 (ko) * | 2008-05-12 | 2016-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
WO2009142310A1 (en) | 2008-05-23 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2009148001A1 (en) * | 2008-06-06 | 2009-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8053253B2 (en) * | 2008-06-06 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
WO2010032602A1 (en) * | 2008-09-18 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2010032611A1 (en) | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2010035627A1 (en) | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2010035625A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semi conductor device |
US9000442B2 (en) * | 2010-01-20 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device |
US9023254B2 (en) * | 2011-10-20 | 2015-05-05 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
CN102751586B (zh) * | 2012-07-10 | 2015-03-11 | 大连理工大学 | 一种基于相变材料的可调谐左手超材料 |
KR102097153B1 (ko) * | 2012-08-31 | 2020-04-06 | 삼성디스플레이 주식회사 | 유기 발광 장치 및 그 제조 방법 |
US20140061610A1 (en) * | 2012-08-31 | 2014-03-06 | Hyo-Young MUN | Organic light emitting device and manufacturing method thereof |
KR102308784B1 (ko) * | 2020-02-28 | 2021-10-01 | 한양대학교 산학협력단 | 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP3974749B2 (ja) * | 2000-12-15 | 2007-09-12 | シャープ株式会社 | 機能素子の転写方法 |
TW574753B (en) * | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
JP2002353235A (ja) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板とそれを用いた表示装置およびその製造方法 |
JP4748943B2 (ja) * | 2003-02-28 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3836096B2 (ja) * | 2003-08-25 | 2006-10-18 | オムロン株式会社 | Icタグ及びicタグの製造方法 |
JP4836465B2 (ja) * | 2004-02-06 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法及び薄膜集積回路用素子基板 |
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2006
- 2006-09-27 JP JP2006262010A patent/JP5063066B2/ja not_active Expired - Fee Related
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