JP2007109822A5 - - Google Patents
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- Publication number
- JP2007109822A5 JP2007109822A5 JP2005298125A JP2005298125A JP2007109822A5 JP 2007109822 A5 JP2007109822 A5 JP 2007109822A5 JP 2005298125 A JP2005298125 A JP 2005298125A JP 2005298125 A JP2005298125 A JP 2005298125A JP 2007109822 A5 JP2007109822 A5 JP 2007109822A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- manufacturing
- semiconductor
- groove
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 23
- 238000004519 manufacturing process Methods 0.000 claims 14
- 238000000926 separation method Methods 0.000 claims 6
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- 230000001678 irradiating Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 238000007790 scraping Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005298125A JP4992220B2 (ja) | 2005-10-12 | 2005-10-12 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005298125A JP4992220B2 (ja) | 2005-10-12 | 2005-10-12 | 半導体素子の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007109822A JP2007109822A (ja) | 2007-04-26 |
JP2007109822A5 true JP2007109822A5 (zh) | 2008-11-27 |
JP4992220B2 JP4992220B2 (ja) | 2012-08-08 |
Family
ID=38035461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005298125A Active JP4992220B2 (ja) | 2005-10-12 | 2005-10-12 | 半導体素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4992220B2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010109015A (ja) * | 2008-10-28 | 2010-05-13 | Panasonic Electric Works Co Ltd | 半導体発光素子の製造方法 |
JP5416081B2 (ja) * | 2010-12-27 | 2014-02-12 | 古河電気工業株式会社 | ウエハ貼着用粘着シート、ウエハの個片化方法、およびチップの製造方法 |
JP5886524B2 (ja) * | 2011-01-07 | 2016-03-16 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
JP5656748B2 (ja) * | 2011-05-16 | 2015-01-21 | シチズンホールディングス株式会社 | 半導体発光素子の製造方法 |
KR20150119350A (ko) * | 2013-04-10 | 2015-10-23 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치, 반도체 장치의 제조 방법 |
US9543465B2 (en) | 2014-05-20 | 2017-01-10 | Nichia Corporation | Method for manufacturing light emitting device |
US9728509B1 (en) | 2016-05-05 | 2017-08-08 | Globalfoundries Inc. | Laser scribe structures for a wafer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3449201B2 (ja) * | 1997-11-28 | 2003-09-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
JP2002043251A (ja) * | 2000-07-25 | 2002-02-08 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
JP2004165226A (ja) * | 2002-11-08 | 2004-06-10 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP2004228218A (ja) * | 2003-01-21 | 2004-08-12 | Disco Abrasive Syst Ltd | 半導体チップの処理方法 |
JP2004289047A (ja) * | 2003-03-25 | 2004-10-14 | Toyoda Gosei Co Ltd | 半導体発光素子及びその製造方法 |
JP3813599B2 (ja) * | 2003-06-13 | 2006-08-23 | ローム株式会社 | 白色発光の発光ダイオード素子を製造する方法 |
JP4398686B2 (ja) * | 2003-09-11 | 2010-01-13 | 株式会社ディスコ | ウエーハの加工方法 |
JP4427308B2 (ja) * | 2003-12-10 | 2010-03-03 | 株式会社ディスコ | 半導体ウェーハの分割方法 |
JP2005244198A (ja) * | 2004-01-26 | 2005-09-08 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4402971B2 (ja) * | 2004-02-03 | 2010-01-20 | 株式会社ディスコ | ウエーハの分割方法 |
CN100524855C (zh) * | 2004-03-31 | 2009-08-05 | 日亚化学工业株式会社 | 氮化物半导体发光元件 |
JP2005322738A (ja) * | 2004-05-07 | 2005-11-17 | Toshiba Corp | 半導体装置の製造方法 |
JP4564393B2 (ja) * | 2005-04-11 | 2010-10-20 | パナソニック株式会社 | 半導体固片の仕上げ加工方法 |
-
2005
- 2005-10-12 JP JP2005298125A patent/JP4992220B2/ja active Active
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