IL233797A0 - Chemical mechanical polishing preparation containing protein - Google Patents

Chemical mechanical polishing preparation containing protein

Info

Publication number
IL233797A0
IL233797A0 IL233797A IL23379714A IL233797A0 IL 233797 A0 IL233797 A0 IL 233797A0 IL 233797 A IL233797 A IL 233797A IL 23379714 A IL23379714 A IL 23379714A IL 233797 A0 IL233797 A0 IL 233797A0
Authority
IL
Israel
Prior art keywords
cmp
protein
composition
mechanical polishing
chemical mechanical
Prior art date
Application number
IL233797A
Other languages
English (en)
Hebrew (he)
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL233797A0 publication Critical patent/IL233797A0/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/06Other polishing compositions
    • C09G1/14Other polishing compositions based on non-waxy substances
    • C09G1/18Other polishing compositions based on non-waxy substances on other substances
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL233797A 2012-02-10 2014-07-24 Chemical mechanical polishing preparation containing protein IL233797A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10
PCT/IB2013/050647 WO2013118015A1 (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Publications (1)

Publication Number Publication Date
IL233797A0 true IL233797A0 (en) 2014-09-30

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
IL233797A IL233797A0 (en) 2012-02-10 2014-07-24 Chemical mechanical polishing preparation containing protein

Country Status (11)

Country Link
US (1) US9777192B2 (enExample)
EP (1) EP2812911B1 (enExample)
JP (1) JP6114312B2 (enExample)
KR (1) KR20140122271A (enExample)
CN (1) CN104081501B (enExample)
IL (1) IL233797A0 (enExample)
MY (1) MY171093A (enExample)
RU (1) RU2631875C2 (enExample)
SG (1) SG11201404747UA (enExample)
TW (1) TWI606102B (enExample)
WO (1) WO2013118015A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104169418B (zh) * 2012-02-13 2017-06-13 国立大学法人京都工艺纤维大学 具有对氮化硅(si3n4)的亲和性的肽及其用途
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE266071T1 (de) * 1998-02-24 2004-05-15 Showa Denko Kk Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Lsiデバイス研磨用研磨材組成物及び研磨方法
US6679761B1 (en) 1999-11-04 2004-01-20 Seimi Chemical Co., Ltd. Polishing compound for semiconductor containing peptide
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
EP1929512A2 (en) 2005-08-05 2008-06-11 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
KR101395542B1 (ko) * 2006-05-02 2014-05-14 캐보트 마이크로일렉트로닉스 코포레이션 반도체 물질의 cmp를 위한 조성물 및 방법
EP2092031A1 (en) 2006-12-04 2009-08-26 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Jsr株式会社 化学機械研磨用水系分散体
WO2010037730A1 (en) * 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
CA2752808A1 (en) * 2009-03-09 2010-09-16 Basf Se Use of a synergistic mixture of water-soluble polymers and hydrophobins for thickening aqueous phases
JP2012028747A (ja) * 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Cmp研磨液及び基板の研磨方法

Also Published As

Publication number Publication date
WO2013118015A1 (en) 2013-08-15
JP6114312B2 (ja) 2017-04-12
US20150017454A1 (en) 2015-01-15
JP2015511258A (ja) 2015-04-16
EP2812911A1 (en) 2014-12-17
EP2812911A4 (en) 2015-08-12
EP2812911B1 (en) 2017-06-28
MY171093A (en) 2019-09-25
TWI606102B (zh) 2017-11-21
CN104081501A (zh) 2014-10-01
KR20140122271A (ko) 2014-10-17
RU2014136534A (ru) 2016-03-27
CN104081501B (zh) 2019-02-01
SG11201404747UA (en) 2014-09-26
RU2631875C2 (ru) 2017-09-28
TW201339258A (zh) 2013-10-01
US9777192B2 (en) 2017-10-03

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