RU2631875C2 - Композиция для химико-механического полирования (смр), содержащая белок - Google Patents

Композиция для химико-механического полирования (смр), содержащая белок Download PDF

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Publication number
RU2631875C2
RU2631875C2 RU2014136534A RU2014136534A RU2631875C2 RU 2631875 C2 RU2631875 C2 RU 2631875C2 RU 2014136534 A RU2014136534 A RU 2014136534A RU 2014136534 A RU2014136534 A RU 2014136534A RU 2631875 C2 RU2631875 C2 RU 2631875C2
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RU
Russia
Prior art keywords
composition
chemical
mechanical polishing
protein
cmp
Prior art date
Application number
RU2014136534A
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English (en)
Russian (ru)
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RU2014136534A (ru
Inventor
Южуо ЛИ
Бастиан Мартен НОЛЛЕР
Михаэль ЛАУТЕР
Роланд ЛАНГЕ
Original Assignee
Басф Се
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Publication date
Application filed by Басф Се filed Critical Басф Се
Publication of RU2014136534A publication Critical patent/RU2014136534A/ru
Application granted granted Critical
Publication of RU2631875C2 publication Critical patent/RU2631875C2/ru

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2014136534A 2012-02-10 2013-01-25 Композиция для химико-механического полирования (смр), содержащая белок RU2631875C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10
US61/597,210 2012-02-10
PCT/IB2013/050647 WO2013118015A1 (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Publications (2)

Publication Number Publication Date
RU2014136534A RU2014136534A (ru) 2016-03-27
RU2631875C2 true RU2631875C2 (ru) 2017-09-28

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2014136534A RU2631875C2 (ru) 2012-02-10 2013-01-25 Композиция для химико-механического полирования (смр), содержащая белок

Country Status (11)

Country Link
US (1) US9777192B2 (enExample)
EP (1) EP2812911B1 (enExample)
JP (1) JP6114312B2 (enExample)
KR (1) KR20140122271A (enExample)
CN (1) CN104081501B (enExample)
IL (1) IL233797A0 (enExample)
MY (1) MY171093A (enExample)
RU (1) RU2631875C2 (enExample)
SG (1) SG11201404747UA (enExample)
TW (1) TWI606102B (enExample)
WO (1) WO2013118015A1 (enExample)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
CN104169418B (zh) * 2012-02-13 2017-06-13 国立大学法人京都工艺纤维大学 具有对氮化硅(si3n4)的亲和性的肽及其用途
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Citations (6)

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EP1338636A1 (en) * 2000-10-06 2003-08-27 Mitsui Mining & Smelting Co., Ltd. Abrasive material
RU2002106418A (ru) * 1999-08-13 2003-09-27 Кабот Майкроэлектроникс Корпорейшн Химико-механические полирующие системы и способы их использования
US20060113283A1 (en) * 2004-11-30 2006-06-01 Kao Corporation Polishing composition for a semiconductor substrate
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive

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ATE266071T1 (de) * 1998-02-24 2004-05-15 Showa Denko Kk Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
US6679761B1 (en) 1999-11-04 2004-01-20 Seimi Chemical Co., Ltd. Polishing compound for semiconductor containing peptide
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
KR101395542B1 (ko) * 2006-05-02 2014-05-14 캐보트 마이크로일렉트로닉스 코포레이션 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Ｊｓｒ株式会社 化学機械研磨用水系分散体
WO2010037730A1 (en) * 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
CA2752808A1 (en) * 2009-03-09 2010-09-16 Basf Se Use of a synergistic mixture of water-soluble polymers and hydrophobins for thickening aqueous phases
JP2012028747A (ja) * 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液及び基板の研磨方法

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
RU2002106418A (ru) * 1999-08-13 2003-09-27 Кабот Майкроэлектроникс Корпорейшн Химико-механические полирующие системы и способы их использования
EP1338636A1 (en) * 2000-10-06 2003-08-27 Mitsui Mining & Smelting Co., Ltd. Abrasive material
US20060113283A1 (en) * 2004-11-30 2006-06-01 Kao Corporation Polishing composition for a semiconductor substrate
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive

Also Published As

Publication number Publication date
WO2013118015A1 (en) 2013-08-15
JP6114312B2 (ja) 2017-04-12
US20150017454A1 (en) 2015-01-15
JP2015511258A (ja) 2015-04-16
EP2812911A1 (en) 2014-12-17
EP2812911A4 (en) 2015-08-12
EP2812911B1 (en) 2017-06-28
MY171093A (en) 2019-09-25
TWI606102B (zh) 2017-11-21
IL233797A0 (en) 2014-09-30
CN104081501A (zh) 2014-10-01
KR20140122271A (ko) 2014-10-17
RU2014136534A (ru) 2016-03-27
CN104081501B (zh) 2019-02-01
SG11201404747UA (en) 2014-09-26
TW201339258A (zh) 2013-10-01
US9777192B2 (en) 2017-10-03

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Effective date: 20200126