IL157828A0 - Semiconductor structure implementing sacrificial material and methods for making and implementing the same - Google Patents

Semiconductor structure implementing sacrificial material and methods for making and implementing the same

Info

Publication number
IL157828A0
IL157828A0 IL15782802A IL15782802A IL157828A0 IL 157828 A0 IL157828 A0 IL 157828A0 IL 15782802 A IL15782802 A IL 15782802A IL 15782802 A IL15782802 A IL 15782802A IL 157828 A0 IL157828 A0 IL 157828A0
Authority
IL
Israel
Prior art keywords
implementing
methods
interconnect metallization
stubs
sacrificial layer
Prior art date
Application number
IL15782802A
Other languages
English (en)
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL157828A0 publication Critical patent/IL157828A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Peptides Or Proteins (AREA)
IL15782802A 2001-03-28 2002-03-26 Semiconductor structure implementing sacrificial material and methods for making and implementing the same IL157828A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/821,415 US6984892B2 (en) 2001-03-28 2001-03-28 Semiconductor structure implementing low-K dielectric materials and supporting stubs
PCT/US2002/009617 WO2002103791A2 (en) 2001-03-28 2002-03-26 Semiconductor structure implementing sacrificial material and methods for making and implementing the same

Publications (1)

Publication Number Publication Date
IL157828A0 true IL157828A0 (en) 2004-03-28

Family

ID=25233349

Family Applications (3)

Application Number Title Priority Date Filing Date
IL15782802A IL157828A0 (en) 2001-03-28 2002-03-26 Semiconductor structure implementing sacrificial material and methods for making and implementing the same
IL157828A IL157828A (en) 2001-03-28 2003-09-09 Semiconductor structure implementing sacrificial material
IL201926A IL201926A0 (en) 2001-03-28 2009-11-04 Semiconductor structure implementing sacrificial material and methods for making and implementing the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
IL157828A IL157828A (en) 2001-03-28 2003-09-09 Semiconductor structure implementing sacrificial material
IL201926A IL201926A0 (en) 2001-03-28 2009-11-04 Semiconductor structure implementing sacrificial material and methods for making and implementing the same

Country Status (10)

Country Link
US (3) US6984892B2 (de)
EP (1) EP1415344B1 (de)
JP (1) JP4283106B2 (de)
KR (1) KR100874521B1 (de)
CN (2) CN100481437C (de)
AT (1) ATE328366T1 (de)
DE (1) DE60211915T2 (de)
IL (3) IL157828A0 (de)
TW (1) TW533574B (de)
WO (1) WO2002103791A2 (de)

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JP5204370B2 (ja) * 2005-03-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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US7737020B1 (en) * 2005-12-21 2010-06-15 Xilinx, Inc. Method of fabricating CMOS devices using fluid-based dielectric materials
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TW200826233A (en) * 2006-12-15 2008-06-16 Touch Micro System Tech Method of fabricating metal interconnects and inter-metal dielectric layer thereof
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JP5209269B2 (ja) * 2007-10-29 2013-06-12 日本電信電話株式会社 電気装置及びその製造方法
CN101593719B (zh) * 2008-05-26 2010-08-11 中芯国际集成电路制造(北京)有限公司 自支撑空气桥互连结构的制作方法
US8299622B2 (en) 2008-08-05 2012-10-30 International Business Machines Corporation IC having viabar interconnection and related method
JP2011040582A (ja) * 2009-08-11 2011-02-24 Fuji Xerox Co Ltd 発光素子およびその製造方法
CN101834153B (zh) * 2010-04-22 2015-05-20 上海华虹宏力半导体制造有限公司 增强芯片封装时抗压能力的方法及其芯片
US8896120B2 (en) * 2010-04-27 2014-11-25 International Business Machines Corporation Structures and methods for air gap integration
US9293366B2 (en) 2010-04-28 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias with improved connections
US8525354B2 (en) * 2011-10-13 2013-09-03 United Microelectronics Corporation Bond pad structure and fabricating method thereof
US9105634B2 (en) 2012-06-29 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in interconnect structures and methods for forming the same
KR20140089650A (ko) 2013-01-03 2014-07-16 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN103943550B (zh) * 2013-01-18 2016-07-27 中芯国际集成电路制造(上海)有限公司 顶层金属互连层的制造方法
JP6428625B2 (ja) * 2013-08-30 2018-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基体の研磨方法
JP6295802B2 (ja) * 2014-04-18 2018-03-20 ソニー株式会社 高周波デバイス用電界効果トランジスタおよびその製造方法、ならびに高周波デバイス
US20150340322A1 (en) * 2014-05-23 2015-11-26 Rf Micro Devices, Inc. Rf switch structure having reduced off-state capacitance
WO2016151684A1 (ja) * 2015-03-20 2016-09-29 株式会社日立国際電気 半導体装置の製造方法、記録媒体及び基板処理装置
US10211052B1 (en) * 2017-09-22 2019-02-19 Lam Research Corporation Systems and methods for fabrication of a redistribution layer to avoid etching of the layer
US11299827B2 (en) 2018-05-17 2022-04-12 James Tolle Nanoconductor smart wearable technology and electronics
US10515905B1 (en) * 2018-06-18 2019-12-24 Raytheon Company Semiconductor device with anti-deflection layers
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CN114088201A (zh) * 2021-03-26 2022-02-25 北京北方高业科技有限公司 基于cmos工艺的红外探测器像元和红外探测器
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US20230240079A1 (en) * 2022-01-27 2023-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of manufacturing semiconductor structure
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Also Published As

Publication number Publication date
JP4283106B2 (ja) 2009-06-24
CN101488473A (zh) 2009-07-22
WO2002103791A2 (en) 2002-12-27
DE60211915D1 (de) 2006-07-06
KR100874521B1 (ko) 2008-12-16
US20090004845A1 (en) 2009-01-01
CN1531755A (zh) 2004-09-22
JP2005519454A (ja) 2005-06-30
IL157828A (en) 2010-06-16
US7875548B2 (en) 2011-01-25
CN100481437C (zh) 2009-04-22
EP1415344B1 (de) 2006-05-31
US20050194688A1 (en) 2005-09-08
ATE328366T1 (de) 2006-06-15
KR20030086613A (ko) 2003-11-10
TW533574B (en) 2003-05-21
CN101488473B (zh) 2011-07-13
IL201926A0 (en) 2010-06-16
DE60211915T2 (de) 2007-02-08
US20060043596A1 (en) 2006-03-02
EP1415344A2 (de) 2004-05-06
WO2002103791A3 (en) 2004-02-19
US6984892B2 (en) 2006-01-10
US7425501B2 (en) 2008-09-16

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