IL133421A0 - Photoresist developer and method of development - Google Patents

Photoresist developer and method of development

Info

Publication number
IL133421A0
IL133421A0 IL13342199A IL13342199A IL133421A0 IL 133421 A0 IL133421 A0 IL 133421A0 IL 13342199 A IL13342199 A IL 13342199A IL 13342199 A IL13342199 A IL 13342199A IL 133421 A0 IL133421 A0 IL 133421A0
Authority
IL
Israel
Prior art keywords
development
photoresist developer
photoresist
developer
Prior art date
Application number
IL13342199A
Other languages
English (en)
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of IL133421A0 publication Critical patent/IL133421A0/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
IL13342199A 1998-04-15 1999-04-07 Photoresist developer and method of development IL133421A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6086598A 1998-04-15 1998-04-15
PCT/US1999/007631 WO1999053381A1 (en) 1998-04-15 1999-04-07 Photoresist developer and method of development

Publications (1)

Publication Number Publication Date
IL133421A0 true IL133421A0 (en) 2001-04-30

Family

ID=22032224

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13342199A IL133421A0 (en) 1998-04-15 1999-04-07 Photoresist developer and method of development

Country Status (8)

Country Link
US (2) US6107009A (xx)
EP (1) EP0991983A1 (xx)
JP (1) JP2002505766A (xx)
KR (1) KR20010013818A (xx)
AU (1) AU3386599A (xx)
CA (1) CA2292572A1 (xx)
IL (1) IL133421A0 (xx)
WO (1) WO1999053381A1 (xx)

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JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
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US7939131B2 (en) * 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US7517796B2 (en) * 2005-02-17 2009-04-14 Sandisk 3D Llc Method for patterning submicron pillars
KR100598418B1 (ko) 2005-03-24 2006-07-10 테크노세미켐 주식회사 알루미늄 및 투명도전막의 통합 식각액 조성물
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US8148055B2 (en) * 2006-06-30 2012-04-03 Infineon Technologies Ag Method for developing a photoresist
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KR101259752B1 (ko) * 2007-09-13 2013-04-30 삼성전자주식회사 마스크 제조방법
CN101868760B (zh) * 2007-11-21 2013-01-16 分子制模股份有限公司 用于纳米刻印光刻的多孔模板及方法、以及刻印层叠物
CN101441422B (zh) * 2007-11-22 2011-04-27 乐凯集团第二胶片厂 热敏阳图ctp版用显影液
JP5228631B2 (ja) * 2008-05-29 2013-07-03 富士フイルム株式会社 平版印刷版現像用処理液及び平版印刷版の作製方法
US20100072671A1 (en) * 2008-09-25 2010-03-25 Molecular Imprints, Inc. Nano-imprint lithography template fabrication and treatment
US8470188B2 (en) * 2008-10-02 2013-06-25 Molecular Imprints, Inc. Nano-imprint lithography templates
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
CN101762992B (zh) * 2009-12-25 2012-06-27 平易印刷技术有限公司 阳图热敏ctp版显影液
WO2011094317A2 (en) * 2010-01-26 2011-08-04 Molecular Imprints, Inc. Micro-conformal templates for nanoimprint lithography
WO2011094696A2 (en) * 2010-01-29 2011-08-04 Molecular Imprints, Inc. Ultra-compliant nanoimprint lithography template
US8703403B2 (en) * 2011-12-22 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for drying a wafer
KR101432446B1 (ko) * 2013-06-13 2014-08-20 삼성전기주식회사 포토레지스트 현상용 조성물 및 이를 이용한 포토레지스트의 현상방법
JP6057842B2 (ja) * 2013-06-20 2017-01-11 三菱電機株式会社 半導体装置の製造方法
KR101540009B1 (ko) * 2013-11-25 2015-07-28 영창케미칼 주식회사 산화방지용 포토레지스트 현상액 조성물
CN107357140B (zh) * 2017-09-14 2021-05-04 江阴江化微电子材料股份有限公司 一种正性光刻胶用显影液及其应用
CN112305876A (zh) * 2019-07-31 2021-02-02 无锡迪思微电子有限公司 一种显影液的制备方法

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Also Published As

Publication number Publication date
EP0991983A1 (en) 2000-04-12
KR20010013818A (ko) 2001-02-26
US6107009A (en) 2000-08-22
CA2292572A1 (en) 1999-10-21
JP2002505766A (ja) 2002-02-19
US6200736B1 (en) 2001-03-13
WO1999053381A1 (en) 1999-10-21
AU3386599A (en) 1999-11-01

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