IL133421A0 - Photoresist developer and method of development - Google Patents
Photoresist developer and method of developmentInfo
- Publication number
- IL133421A0 IL133421A0 IL13342199A IL13342199A IL133421A0 IL 133421 A0 IL133421 A0 IL 133421A0 IL 13342199 A IL13342199 A IL 13342199A IL 13342199 A IL13342199 A IL 13342199A IL 133421 A0 IL133421 A0 IL 133421A0
- Authority
- IL
- Israel
- Prior art keywords
- development
- photoresist developer
- photoresist
- developer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6086598A | 1998-04-15 | 1998-04-15 | |
PCT/US1999/007631 WO1999053381A1 (en) | 1998-04-15 | 1999-04-07 | Photoresist developer and method of development |
Publications (1)
Publication Number | Publication Date |
---|---|
IL133421A0 true IL133421A0 (en) | 2001-04-30 |
Family
ID=22032224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13342199A IL133421A0 (en) | 1998-04-15 | 1999-04-07 | Photoresist developer and method of development |
Country Status (8)
Country | Link |
---|---|
US (2) | US6107009A (xx) |
EP (1) | EP0991983A1 (xx) |
JP (1) | JP2002505766A (xx) |
KR (1) | KR20010013818A (xx) |
AU (1) | AU3386599A (xx) |
CA (1) | CA2292572A1 (xx) |
IL (1) | IL133421A0 (xx) |
WO (1) | WO1999053381A1 (xx) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6689215B2 (en) | 1998-09-17 | 2004-02-10 | Asml Holdings, N.V. | Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface |
US6248171B1 (en) | 1998-09-17 | 2001-06-19 | Silicon Valley Group, Inc. | Yield and line width performance for liquid polymers and other materials |
US6248614B1 (en) * | 1999-03-19 | 2001-06-19 | International Business Machines Corporation | Flip-chip package with optimized encapsulant adhesion and method |
US6740566B2 (en) * | 1999-09-17 | 2004-05-25 | Advanced Micro Devices, Inc. | Ultra-thin resist shallow trench process using high selectivity nitride etch |
KR20000006831A (ko) * | 1999-11-05 | 2000-02-07 | 윤세훈 | 수용성 포지티브 스트리퍼의 조성 |
US6399513B1 (en) * | 1999-11-12 | 2002-06-04 | Texas Instruments Incorporated | Ozonated DI water process for organic residue and metal removal processes |
KR100366615B1 (ko) * | 1999-11-15 | 2003-01-06 | 삼성전자 주식회사 | 케미컬 공급노즐을 구비한 스피너장비, 이를 이용한 패턴형성방법 및 식각 방법 |
TW558736B (en) * | 2000-02-26 | 2003-10-21 | Shipley Co Llc | Method of reducing defects |
US6746826B1 (en) * | 2000-07-25 | 2004-06-08 | Asml Holding N.V. | Method for an improved developing process in wafer photolithography |
WO2002023598A2 (en) * | 2000-09-15 | 2002-03-21 | Infineon Technologies North America Corp. | A method to reduce post-development defects without sacrificing throughput |
US6613499B2 (en) * | 2001-06-12 | 2003-09-02 | Macronix International Co., Ltd. | Development method for manufacturing semiconductors |
US6703169B2 (en) * | 2001-07-23 | 2004-03-09 | Applied Materials, Inc. | Method of preparing optically imaged high performance photomasks |
GB2383849A (en) * | 2002-01-03 | 2003-07-09 | Zarlink Semiconductor Ltd | Resist development |
US7018481B2 (en) * | 2002-01-28 | 2006-03-28 | Kabushiki Kaisha Toshiba | Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle |
US6900003B2 (en) * | 2002-04-12 | 2005-05-31 | Shipley Company, L.L.C. | Photoresist processing aid and method |
TW200307856A (en) * | 2002-05-07 | 2003-12-16 | Shipley Co Llc | Residue reducing stable concentrate |
TW200502710A (en) * | 2003-04-23 | 2005-01-16 | Koninkl Philips Electronics Nv | Photolithographic process, stamper, use of said stamper and optical data storage medium |
US6982138B2 (en) * | 2003-08-04 | 2006-01-03 | General Phosphorix, Llc | Method of controlling removal of photoresist in openings of a photoresist mask |
US7115488B2 (en) * | 2003-08-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US6872014B1 (en) | 2003-11-21 | 2005-03-29 | Asml Netherlands B.V. | Method for developing a photoresist pattern |
JP4493393B2 (ja) * | 2004-04-23 | 2010-06-30 | 東京応化工業株式会社 | リソグラフィー用リンス液 |
KR100598290B1 (ko) * | 2004-05-20 | 2006-07-07 | 동부일렉트로닉스 주식회사 | 리소그래피 공정의 감광막 패턴 형성 방법 |
US7714441B2 (en) * | 2004-08-09 | 2010-05-11 | Lam Research | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers |
US7939131B2 (en) * | 2004-08-16 | 2011-05-10 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US7517796B2 (en) * | 2005-02-17 | 2009-04-14 | Sandisk 3D Llc | Method for patterning submicron pillars |
KR100598418B1 (ko) | 2005-03-24 | 2006-07-10 | 테크노세미켐 주식회사 | 알루미늄 및 투명도전막의 통합 식각액 조성물 |
US8557351B2 (en) * | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US7759407B2 (en) * | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8808808B2 (en) | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
US8148055B2 (en) * | 2006-06-30 | 2012-04-03 | Infineon Technologies Ag | Method for developing a photoresist |
US20080110557A1 (en) * | 2006-11-15 | 2008-05-15 | Molecular Imprints, Inc. | Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces |
KR101259752B1 (ko) * | 2007-09-13 | 2013-04-30 | 삼성전자주식회사 | 마스크 제조방법 |
CN101868760B (zh) * | 2007-11-21 | 2013-01-16 | 分子制模股份有限公司 | 用于纳米刻印光刻的多孔模板及方法、以及刻印层叠物 |
CN101441422B (zh) * | 2007-11-22 | 2011-04-27 | 乐凯集团第二胶片厂 | 热敏阳图ctp版用显影液 |
JP5228631B2 (ja) * | 2008-05-29 | 2013-07-03 | 富士フイルム株式会社 | 平版印刷版現像用処理液及び平版印刷版の作製方法 |
US20100072671A1 (en) * | 2008-09-25 | 2010-03-25 | Molecular Imprints, Inc. | Nano-imprint lithography template fabrication and treatment |
US8470188B2 (en) * | 2008-10-02 | 2013-06-25 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100104852A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of High-Throughput Nano-Imprint Lithography Templates |
CN101762992B (zh) * | 2009-12-25 | 2012-06-27 | 平易印刷技术有限公司 | 阳图热敏ctp版显影液 |
WO2011094317A2 (en) * | 2010-01-26 | 2011-08-04 | Molecular Imprints, Inc. | Micro-conformal templates for nanoimprint lithography |
WO2011094696A2 (en) * | 2010-01-29 | 2011-08-04 | Molecular Imprints, Inc. | Ultra-compliant nanoimprint lithography template |
US8703403B2 (en) * | 2011-12-22 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for drying a wafer |
KR101432446B1 (ko) * | 2013-06-13 | 2014-08-20 | 삼성전기주식회사 | 포토레지스트 현상용 조성물 및 이를 이용한 포토레지스트의 현상방법 |
JP6057842B2 (ja) * | 2013-06-20 | 2017-01-11 | 三菱電機株式会社 | 半導体装置の製造方法 |
KR101540009B1 (ko) * | 2013-11-25 | 2015-07-28 | 영창케미칼 주식회사 | 산화방지용 포토레지스트 현상액 조성물 |
CN107357140B (zh) * | 2017-09-14 | 2021-05-04 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶用显影液及其应用 |
CN112305876A (zh) * | 2019-07-31 | 2021-02-02 | 无锡迪思微电子有限公司 | 一种显影液的制备方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5129877A (xx) * | 1974-09-06 | 1976-03-13 | Fuji Photo Film Co Ltd | |
JPS5230850B2 (xx) * | 1974-10-07 | 1977-08-11 | ||
JPS6015055B2 (ja) * | 1976-09-06 | 1985-04-17 | 富士写真フイルム株式会社 | マスク画像の形成方法 |
DE2948554A1 (de) * | 1979-12-03 | 1981-06-04 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch |
JPS5913944A (ja) * | 1982-07-15 | 1984-01-24 | Idemitsu Kosan Co Ltd | 潤滑剤の評価方法および評価装置 |
JPS60158461A (ja) * | 1984-01-27 | 1985-08-19 | Japan Synthetic Rubber Co Ltd | 現像液 |
US4824769A (en) * | 1984-10-15 | 1989-04-25 | Allied Corporation | High contrast photoresist developer |
EP0206086B1 (en) * | 1985-06-10 | 1992-09-09 | Canon Kabushiki Kaisha | Active energy ray-curing resin composition |
CS254490B1 (cs) * | 1985-12-12 | 1988-01-15 | Zdenek Kolman | Zapojení číslicově-analogového převodníku pro polohové diferenční členy |
US5094934A (en) * | 1987-04-06 | 1992-03-10 | Morton International, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
DE3886971T2 (de) * | 1987-04-06 | 1994-05-19 | Hoechst Celanese Corp | Hochkontrastreicher Positiv-Photolack-Entwickler mit Alkanolamin. |
JP2553872B2 (ja) * | 1987-07-21 | 1996-11-13 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US4977056A (en) * | 1987-08-10 | 1990-12-11 | E. I. Du Pont De Nemours And Company | Alkylhydroxy benzylpolyamine as adjuvant for electrostatic liquid developers |
JPH02151866A (ja) * | 1988-11-21 | 1990-06-11 | Macdermid Inc | フォトレジスト現像液 |
CA2016774A1 (en) * | 1989-05-25 | 1990-11-25 | Takeshi Sampei | Silver halide photographic light-sensitive material |
DE3927632A1 (de) * | 1989-08-22 | 1991-02-28 | Basf Ag | Umsetzungsprodukt, verfahren zu dessen herstellung und damit erhaltenes strahlungsempfindliches material |
JPH03177842A (ja) * | 1989-12-06 | 1991-08-01 | Fuji Photo Film Co Ltd | 記録材料 |
US5183534A (en) * | 1990-03-09 | 1993-02-02 | Amoco Corporation | Wet-etch process and composition |
JPH0470756A (ja) * | 1990-07-11 | 1992-03-05 | Konica Corp | 感光性平版印刷版の現像方法及び現像液 |
US5223377A (en) * | 1990-08-29 | 1993-06-29 | Interuniversitair Micro-Elektronica Centrum Vzw | Interrupted developing process for a photoresist image |
JPH04163556A (ja) * | 1990-10-29 | 1992-06-09 | Konica Corp | 感光性平版印刷版の処理方法及び処理装置 |
JPH056002A (ja) * | 1991-06-21 | 1993-01-14 | Tokuyama Soda Co Ltd | ホトレジストの現像液 |
JP3123563B2 (ja) * | 1991-09-27 | 2001-01-15 | チッソ株式会社 | 感光性樹脂現像液 |
JP3079195B2 (ja) * | 1991-10-08 | 2000-08-21 | 日本ゼオン株式会社 | ポジ型感放射線性レジスト用現像液 |
US5283374A (en) * | 1993-04-05 | 1994-02-01 | Ocg Microelectronic Materials, Inc. | Selected phenolic derivatives of 4-(4-hydroxyphenyl)-cyclohexanone and their use as sensitivity enhancers for radiation sensitive mixtures |
JPH0736196A (ja) * | 1993-07-23 | 1995-02-07 | Mitsubishi Electric Corp | パターン形成方法 |
US5541033A (en) * | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
-
1999
- 1999-04-07 KR KR1019997011838A patent/KR20010013818A/ko not_active Application Discontinuation
- 1999-04-07 EP EP99915321A patent/EP0991983A1/en not_active Withdrawn
- 1999-04-07 CA CA002292572A patent/CA2292572A1/en not_active Abandoned
- 1999-04-07 WO PCT/US1999/007631 patent/WO1999053381A1/en not_active Application Discontinuation
- 1999-04-07 JP JP55178799A patent/JP2002505766A/ja not_active Ceased
- 1999-04-07 IL IL13342199A patent/IL133421A0/xx unknown
- 1999-04-07 AU AU33865/99A patent/AU3386599A/en not_active Abandoned
- 1999-08-11 US US09/372,471 patent/US6107009A/en not_active Expired - Fee Related
-
2000
- 2000-02-02 US US09/496,728 patent/US6200736B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0991983A1 (en) | 2000-04-12 |
KR20010013818A (ko) | 2001-02-26 |
US6107009A (en) | 2000-08-22 |
CA2292572A1 (en) | 1999-10-21 |
JP2002505766A (ja) | 2002-02-19 |
US6200736B1 (en) | 2001-03-13 |
WO1999053381A1 (en) | 1999-10-21 |
AU3386599A (en) | 1999-11-01 |
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