IE50578B1 - Boosting circuits - Google Patents

Boosting circuits

Info

Publication number
IE50578B1
IE50578B1 IE2515/80A IE251580A IE50578B1 IE 50578 B1 IE50578 B1 IE 50578B1 IE 2515/80 A IE2515/80 A IE 2515/80A IE 251580 A IE251580 A IE 251580A IE 50578 B1 IE50578 B1 IE 50578B1
Authority
IE
Ireland
Prior art keywords
capacitance
boosting
transistor
circuit
voltage
Prior art date
Application number
IE2515/80A
Other languages
English (en)
Other versions
IE802515L (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of IE802515L publication Critical patent/IE802515L/xx
Publication of IE50578B1 publication Critical patent/IE50578B1/en

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Manipulation Of Pulses (AREA)
IE2515/80A 1979-12-05 1980-12-03 Boosting circuits IE50578B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15775179A JPS5693422A (en) 1979-12-05 1979-12-05 Level-up circuit

Publications (2)

Publication Number Publication Date
IE802515L IE802515L (en) 1981-06-05
IE50578B1 true IE50578B1 (en) 1986-05-14

Family

ID=15656543

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2515/80A IE50578B1 (en) 1979-12-05 1980-12-03 Boosting circuits

Country Status (5)

Country Link
US (1) US4382194A (OSRAM)
EP (1) EP0030813B1 (OSRAM)
JP (1) JPS5693422A (OSRAM)
DE (1) DE3070936D1 (OSRAM)
IE (1) IE50578B1 (OSRAM)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122526A (en) * 1980-03-03 1981-09-26 Fujitsu Ltd Semiconductor integrated circuit
JPS56129570A (en) * 1980-03-14 1981-10-09 Mitsubishi Electric Corp Booster circuit
DE3105147A1 (de) * 1981-02-12 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale halbleiterschaltung
JPS57133589A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Semiconductor circuit
JPS57140029A (en) * 1981-02-24 1982-08-30 Nec Corp Output circuit
DE3169127D1 (en) * 1981-05-13 1985-04-04 Ibm Deutschland Input circuit for an integrated monolithic semiconductor memory using field effect transistors
JPS5881325A (ja) * 1981-11-11 1983-05-16 Fujitsu Ltd 半導体ブ−スト回路
US4472644A (en) * 1981-12-10 1984-09-18 Mostek Corporation Bootstrapped clock driver including delay means
JPS58121195A (ja) * 1982-01-13 1983-07-19 Nec Corp プリチヤ−ジ信号発生回路
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
US4673829A (en) * 1982-02-08 1987-06-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
JPS58185091A (ja) * 1982-04-24 1983-10-28 Toshiba Corp 昇圧電圧出力回路および昇圧電圧出力回路を備えたアドレスデコ−ド回路
DE3217264A1 (de) * 1982-05-07 1983-11-10 Siemens AG, 1000 Berlin und 8000 München Integrierter impulsformer
JPS594223A (ja) * 1982-06-30 1984-01-11 Fujitsu Ltd クロツク発生回路
JPS595488A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置
JPS5916195A (ja) * 1982-07-19 1984-01-27 Toshiba Corp 半導体記憶装置
JPS5922444A (ja) * 1982-07-28 1984-02-04 Nec Corp 駆動回路
US4599520A (en) * 1984-01-31 1986-07-08 International Business Machines Corporation Boosted phase driver
JPS60257618A (ja) * 1984-06-04 1985-12-19 Nec Corp ブ−トアツプ回路
US4639622A (en) * 1984-11-19 1987-01-27 International Business Machines Corporation Boosting word-line clock circuit for semiconductor memory
JP2548908B2 (ja) * 1985-04-13 1996-10-30 富士通株式会社 昇圧回路
US4734599A (en) * 1985-04-30 1988-03-29 Hughes Aircraft Company Circuit for multiplying a pump clock voltage
US4716303A (en) * 1985-05-01 1987-12-29 Sharp Kabushiki Kaisha MOS IC pull-up circuit
US4906056A (en) * 1987-04-14 1990-03-06 Mitsubishi Denki Kabushiki Kaisha High speed booster circuit
JPH0748310B2 (ja) * 1987-04-24 1995-05-24 株式会社東芝 半導体集積回路
JP2664927B2 (ja) * 1988-04-25 1997-10-22 日本電気株式会社 信号発生回路
DE68920122T2 (de) * 1988-10-31 1995-05-11 Texas Instruments Inc Verfahren und Ladungsfesthaltesignal-Erhöhungsschaltung.
US5185721A (en) * 1988-10-31 1993-02-09 Texas Instruments Incorporated Charge-retaining signal boosting circuit and method
JPH082016B2 (ja) * 1989-06-20 1996-01-10 日本電気株式会社 昇圧回路
EP0449235B1 (en) * 1990-03-26 1997-11-05 Micron Technology, Inc. Semiconductor memory comprising high efficiency charge pump circuit
US5412257A (en) * 1992-10-20 1995-05-02 United Memories, Inc. High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
JPH0757466A (ja) * 1993-08-12 1995-03-03 Toshiba Corp 半導体集積回路
KR0154157B1 (ko) * 1994-04-29 1998-12-15 김주용 반도체 소자의 부스트랩 회로
FR2773019B1 (fr) * 1997-12-24 2001-10-12 Sgs Thomson Microelectronics Dispositif de generation d'une impulsion de tension
JP3536006B2 (ja) * 2000-03-15 2004-06-07 シャープ株式会社 アクティブマトリクス型表示装置およびその駆動方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646369A (en) * 1970-08-28 1972-02-29 North American Rockwell Multiphase field effect transistor dc driver
US3988617A (en) * 1974-12-23 1976-10-26 International Business Machines Corporation Field effect transistor bias circuit
IT1073440B (it) * 1975-09-22 1985-04-17 Seiko Instr & Electronics Circuito elevatore di tensione realizzato in mos-fet
US4071783A (en) * 1976-11-29 1978-01-31 International Business Machines Corporation Enhancement/depletion mode field effect transistor driver
JPS54153565A (en) * 1978-05-24 1979-12-03 Nec Corp Semiconductor circuit using insulation gate type field effect transistor
JPS55136723A (en) * 1979-04-11 1980-10-24 Mitsubishi Electric Corp Booster circuit

Also Published As

Publication number Publication date
EP0030813B1 (en) 1985-07-31
DE3070936D1 (en) 1985-09-05
EP0030813A2 (en) 1981-06-24
EP0030813A3 (en) 1982-03-17
JPS5693422A (en) 1981-07-29
IE802515L (en) 1981-06-05
US4382194A (en) 1983-05-03
JPS6412412B2 (OSRAM) 1989-02-28

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