DE3070936D1 - Boosting circuits - Google Patents
Boosting circuitsInfo
- Publication number
- DE3070936D1 DE3070936D1 DE8080304344T DE3070936T DE3070936D1 DE 3070936 D1 DE3070936 D1 DE 3070936D1 DE 8080304344 T DE8080304344 T DE 8080304344T DE 3070936 T DE3070936 T DE 3070936T DE 3070936 D1 DE3070936 D1 DE 3070936D1
- Authority
- DE
- Germany
- Prior art keywords
- boosting circuits
- boosting
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Dc-Dc Converters (AREA)
- Manipulation Of Pulses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15775179A JPS5693422A (en) | 1979-12-05 | 1979-12-05 | Level-up circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3070936D1 true DE3070936D1 (en) | 1985-09-05 |
Family
ID=15656543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080304344T Expired DE3070936D1 (en) | 1979-12-05 | 1980-12-03 | Boosting circuits |
Country Status (5)
Country | Link |
---|---|
US (1) | US4382194A (de) |
EP (1) | EP0030813B1 (de) |
JP (1) | JPS5693422A (de) |
DE (1) | DE3070936D1 (de) |
IE (1) | IE50578B1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122526A (en) * | 1980-03-03 | 1981-09-26 | Fujitsu Ltd | Semiconductor integrated circuit |
JPS56129570A (en) * | 1980-03-14 | 1981-10-09 | Mitsubishi Electric Corp | Booster circuit |
JPS57133589A (en) * | 1981-02-12 | 1982-08-18 | Fujitsu Ltd | Semiconductor circuit |
DE3105147A1 (de) * | 1981-02-12 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | Integrierte digitale halbleiterschaltung |
JPS57140029A (en) * | 1981-02-24 | 1982-08-30 | Nec Corp | Output circuit |
EP0064569B1 (de) * | 1981-05-13 | 1985-02-27 | Ibm Deutschland Gmbh | Eingangsschaltung für einen monolithisch integrierten Halbleiterspeicher mit Feldeffekttransistoren |
JPS5881325A (ja) * | 1981-11-11 | 1983-05-16 | Fujitsu Ltd | 半導体ブ−スト回路 |
US4472644A (en) * | 1981-12-10 | 1984-09-18 | Mostek Corporation | Bootstrapped clock driver including delay means |
JPS58121195A (ja) * | 1982-01-13 | 1983-07-19 | Nec Corp | プリチヤ−ジ信号発生回路 |
US4511811A (en) * | 1982-02-08 | 1985-04-16 | Seeq Technology, Inc. | Charge pump for providing programming voltage to the word lines in a semiconductor memory array |
US4673829A (en) * | 1982-02-08 | 1987-06-16 | Seeq Technology, Inc. | Charge pump for providing programming voltage to the word lines in a semiconductor memory array |
JPS58185091A (ja) * | 1982-04-24 | 1983-10-28 | Toshiba Corp | 昇圧電圧出力回路および昇圧電圧出力回路を備えたアドレスデコ−ド回路 |
DE3217264A1 (de) * | 1982-05-07 | 1983-11-10 | Siemens AG, 1000 Berlin und 8000 München | Integrierter impulsformer |
JPS594223A (ja) * | 1982-06-30 | 1984-01-11 | Fujitsu Ltd | クロツク発生回路 |
JPS595488A (ja) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | 半導体装置 |
JPS5916195A (ja) * | 1982-07-19 | 1984-01-27 | Toshiba Corp | 半導体記憶装置 |
JPS5922444A (ja) * | 1982-07-28 | 1984-02-04 | Nec Corp | 駆動回路 |
US4599520A (en) * | 1984-01-31 | 1986-07-08 | International Business Machines Corporation | Boosted phase driver |
JPS60257618A (ja) * | 1984-06-04 | 1985-12-19 | Nec Corp | ブ−トアツプ回路 |
US4639622A (en) * | 1984-11-19 | 1987-01-27 | International Business Machines Corporation | Boosting word-line clock circuit for semiconductor memory |
JP2548908B2 (ja) * | 1985-04-13 | 1996-10-30 | 富士通株式会社 | 昇圧回路 |
US4734599A (en) * | 1985-04-30 | 1988-03-29 | Hughes Aircraft Company | Circuit for multiplying a pump clock voltage |
US4716303A (en) * | 1985-05-01 | 1987-12-29 | Sharp Kabushiki Kaisha | MOS IC pull-up circuit |
US4906056A (en) * | 1987-04-14 | 1990-03-06 | Mitsubishi Denki Kabushiki Kaisha | High speed booster circuit |
JPH0748310B2 (ja) * | 1987-04-24 | 1995-05-24 | 株式会社東芝 | 半導体集積回路 |
JP2664927B2 (ja) * | 1988-04-25 | 1997-10-22 | 日本電気株式会社 | 信号発生回路 |
US5185721A (en) * | 1988-10-31 | 1993-02-09 | Texas Instruments Incorporated | Charge-retaining signal boosting circuit and method |
EP0367450B1 (de) * | 1988-10-31 | 1994-12-21 | Texas Instruments Incorporated | Verfahren und Ladungsfesthaltesignal-Erhöhungsschaltung |
JPH082016B2 (ja) * | 1989-06-20 | 1996-01-10 | 日本電気株式会社 | 昇圧回路 |
DE69128102T2 (de) * | 1990-03-26 | 1998-03-05 | Micron Technology Inc | Halbleiterspeicher mit hochwirksamer Ladungspumpenschaltung |
US5412257A (en) * | 1992-10-20 | 1995-05-02 | United Memories, Inc. | High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump |
JPH0757466A (ja) * | 1993-08-12 | 1995-03-03 | Toshiba Corp | 半導体集積回路 |
KR0154157B1 (ko) * | 1994-04-29 | 1998-12-15 | 김주용 | 반도체 소자의 부스트랩 회로 |
FR2773019B1 (fr) * | 1997-12-24 | 2001-10-12 | Sgs Thomson Microelectronics | Dispositif de generation d'une impulsion de tension |
JP3536006B2 (ja) * | 2000-03-15 | 2004-06-07 | シャープ株式会社 | アクティブマトリクス型表示装置およびその駆動方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3646369A (en) * | 1970-08-28 | 1972-02-29 | North American Rockwell | Multiphase field effect transistor dc driver |
US3988617A (en) * | 1974-12-23 | 1976-10-26 | International Business Machines Corporation | Field effect transistor bias circuit |
IT1073440B (it) * | 1975-09-22 | 1985-04-17 | Seiko Instr & Electronics | Circuito elevatore di tensione realizzato in mos-fet |
US4071783A (en) * | 1976-11-29 | 1978-01-31 | International Business Machines Corporation | Enhancement/depletion mode field effect transistor driver |
JPS54153565A (en) * | 1978-05-24 | 1979-12-03 | Nec Corp | Semiconductor circuit using insulation gate type field effect transistor |
JPS55136723A (en) * | 1979-04-11 | 1980-10-24 | Mitsubishi Electric Corp | Booster circuit |
-
1979
- 1979-12-05 JP JP15775179A patent/JPS5693422A/ja active Granted
-
1980
- 1980-12-03 DE DE8080304344T patent/DE3070936D1/de not_active Expired
- 1980-12-03 IE IE2515/80A patent/IE50578B1/en not_active IP Right Cessation
- 1980-12-03 EP EP80304344A patent/EP0030813B1/de not_active Expired
- 1980-12-05 US US06/213,398 patent/US4382194A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0030813A2 (de) | 1981-06-24 |
IE50578B1 (en) | 1986-05-14 |
JPS6412412B2 (de) | 1989-02-28 |
IE802515L (en) | 1981-06-05 |
EP0030813A3 (en) | 1982-03-17 |
US4382194A (en) | 1983-05-03 |
EP0030813B1 (de) | 1985-07-31 |
JPS5693422A (en) | 1981-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |