IE801530L - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
IE801530L
IE801530L IE801530A IE153080A IE801530L IE 801530 L IE801530 L IE 801530L IE 801530 A IE801530 A IE 801530A IE 153080 A IE153080 A IE 153080A IE 801530 L IE801530 L IE 801530L
Authority
IE
Ireland
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Application number
IE801530A
Other versions
IE50350B1 (en
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IE801530L publication Critical patent/IE801530L/en
Publication of IE50350B1 publication Critical patent/IE50350B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
IE1530/80A 1979-07-24 1980-07-23 Monolithic integrated cmos circuit IE50350B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2929869A DE2929869C2 (en) 1979-07-24 1979-07-24 Monolithic integrated CMOS inverter circuitry

Publications (2)

Publication Number Publication Date
IE801530L true IE801530L (en) 1981-01-24
IE50350B1 IE50350B1 (en) 1986-04-02

Family

ID=6076567

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1530/80A IE50350B1 (en) 1979-07-24 1980-07-23 Monolithic integrated cmos circuit

Country Status (6)

Country Link
JP (1) JPS5618459A (en)
DE (1) DE2929869C2 (en)
FR (1) FR2462025A1 (en)
GB (1) GB2054955B (en)
IE (1) IE50350B1 (en)
IT (1) IT1193544B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
EP0166386A3 (en) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Integrated circuit of the complementary circuit technique
EP0213425B1 (en) * 1985-08-26 1992-05-06 Siemens Aktiengesellschaft Complementary integrated circuit with a substrate bias voltage generator and a schottky diode
WO2016057973A1 (en) * 2014-10-10 2016-04-14 Schottky Lsi, Inc. Super cmos (scmostm) devices on a microelectronic system
US8476689B2 (en) 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
US11955476B2 (en) 2008-12-23 2024-04-09 Schottky Lsi, Inc. Super CMOS devices on a microelectronics system
US9853643B2 (en) 2008-12-23 2017-12-26 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
US11342916B2 (en) 2008-12-23 2022-05-24 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS568501B2 (en) * 1973-05-12 1981-02-24
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211885A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS6043666B2 (en) * 1976-10-18 1985-09-30 株式会社日立製作所 Complementary MIS semiconductor device
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor

Also Published As

Publication number Publication date
JPS5618459A (en) 1981-02-21
FR2462025B1 (en) 1983-11-18
GB2054955A (en) 1981-02-18
FR2462025A1 (en) 1981-02-06
DE2929869A1 (en) 1981-02-19
IE50350B1 (en) 1986-04-02
IT1193544B (en) 1988-07-08
IT8023632A1 (en) 1982-01-23
GB2054955B (en) 1983-05-11
IT8023632A0 (en) 1980-07-23
DE2929869C2 (en) 1986-04-30

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