HUE058735T2 - Módosított felületû vékonyréteg optikai eszközök gyártása - Google Patents

Módosított felületû vékonyréteg optikai eszközök gyártása

Info

Publication number
HUE058735T2
HUE058735T2 HUE15731688A HUE15731688A HUE058735T2 HU E058735 T2 HUE058735 T2 HU E058735T2 HU E15731688 A HUE15731688 A HU E15731688A HU E15731688 A HUE15731688 A HU E15731688A HU E058735 T2 HUE058735 T2 HU E058735T2
Authority
HU
Hungary
Prior art keywords
optoelectronic devices
modified surface
fabricating thin
film optoelectronic
film
Prior art date
Application number
HUE15731688A
Other languages
English (en)
Inventor
Patrick Reinhard
Fabian Pianezzi
Benjamin Bissig
Stephan Buecheler
Ayodhya Nath Tiwari
Original Assignee
Flisom Ag
Empa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flisom Ag, Empa filed Critical Flisom Ag
Publication of HUE058735T2 publication Critical patent/HUE058735T2/hu

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
HUE15731688A 2014-05-23 2015-05-21 Módosított felületû vékonyréteg optikai eszközök gyártása HUE058735T2 (hu)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IB2014061651 2014-05-23

Publications (1)

Publication Number Publication Date
HUE058735T2 true HUE058735T2 (hu) 2022-09-28

Family

ID=53490012

Family Applications (1)

Application Number Title Priority Date Filing Date
HUE15731688A HUE058735T2 (hu) 2014-05-23 2015-05-21 Módosított felületû vékonyréteg optikai eszközök gyártása

Country Status (6)

Country Link
US (3) US10109761B2 (hu)
EP (1) EP3146571B1 (hu)
HU (1) HUE058735T2 (hu)
MY (1) MY188522A (hu)
TW (1) TWI677105B (hu)
WO (1) WO2015177748A2 (hu)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
EP3414779B1 (en) 2016-02-11 2021-01-13 Flisom AG Self-assembly patterning for fabricating thin-film devices
US10658532B2 (en) 2016-02-11 2020-05-19 Flisom Ag Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
AT519886A1 (de) * 2017-04-21 2018-11-15 Ait Austrian Inst Tech Gmbh Optoelektronisches bauteil
CN108269868A (zh) * 2018-01-29 2018-07-10 北京铂阳顶荣光伏科技有限公司 薄膜太阳能电池
US11393681B2 (en) 2018-03-07 2022-07-19 Uchicago Argonne, Llc Methods to deposit and etch controlled thin layers of transition metal dichalcogenides
US11447862B2 (en) * 2018-03-07 2022-09-20 Uchicago Argonne, Llc Methods to deposit controlled thin layers of transition metal dichalcogenides
US11142824B2 (en) 2019-04-23 2021-10-12 Uchicago Argonne, Llc Method of producing thin layer of large area transition metal dichalcogenides MoS2 and others

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE442824C (de) 1927-05-23 Paul Haubner Schleifenkipper
US4228315A (en) 1979-05-04 1980-10-14 Rca Corporation Solar cell grid patterns
US4332880A (en) * 1979-09-04 1982-06-01 Energy Conversion Devices, Inc. Imaging film with improved passivating layers
US4335266A (en) 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4465575A (en) 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US5141564A (en) 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US4961829A (en) 1988-09-30 1990-10-09 Semi-Conductor Devices, A Tadiran-Rafael Partnership Passivation of semiconductor surfaces
US5441897A (en) 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
SE508676C2 (sv) 1994-10-21 1998-10-26 Nordic Solar Energy Ab Förfarande för framställning av tunnfilmssolceller
EP0743686A3 (en) 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
CA2184667C (en) 1996-09-03 2000-06-20 Bradley Trent Polischuk Multilayer plate for x-ray imaging and method of producing same
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
WO2001037324A1 (en) 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
JP3732993B2 (ja) 2000-02-09 2006-01-11 シャープ株式会社 太陽電池セルおよびその製造方法
US6441301B1 (en) 2000-03-23 2002-08-27 Matsushita Electric Industrial Co., Ltd. Solar cell and method of manufacturing the same
EP1291932A3 (en) 2001-09-05 2006-10-18 Konica Corporation Organic thin-film semiconductor element and manufacturing method for the same
AU2003275239A1 (en) * 2002-09-30 2004-04-23 Miasole Manufacturing apparatus and method for large-scale production of thin-film solar cells
DE10259258B4 (de) 2002-12-11 2006-03-16 Würth Solar Gmbh & Co. Kg Verfahren zur Herstellung einer Verbindungshalbleiterschicht mit Alkalimetallzusatz
WO2005089330A2 (en) 2004-03-15 2005-09-29 Solopower, Inc. Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton
CN101443929A (zh) 2004-11-10 2009-05-27 德斯塔尔科技公司 使用含碱层的过程和光电装置
US20060145190A1 (en) 2004-12-31 2006-07-06 Salzman David B Surface passivation for III-V compound semiconductors
WO2006076788A1 (en) 2005-01-18 2006-07-27 University Of Saskatchewan Dark current reduction in metal/a-se/metal structures for application as an x-ray photoconductor layer in digital image detectors
JP5662001B2 (ja) 2005-12-21 2015-01-28 クロメック リミテッド 半導体デバイス及びその製造方法
US7795145B2 (en) * 2006-02-15 2010-09-14 Basf Aktiengesellschaft Patterning crystalline compounds on surfaces
WO2008088570A1 (en) 2006-04-18 2008-07-24 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US7644250B2 (en) 2006-06-30 2010-01-05 Intel Corporation Defining pin functionality at device power on
US7528448B2 (en) 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
WO2008013911A1 (en) 2006-07-26 2008-01-31 Solopower, Inc. Technique for doping compound layers used in solar cell fabrication
US7867551B2 (en) 2006-09-21 2011-01-11 Solopower, Inc. Processing method for group IBIIIAVIA semiconductor layer growth
US20080169025A1 (en) 2006-12-08 2008-07-17 Basol Bulent M Doping techniques for group ibiiiavia compound layers
TWI330891B (en) 2006-12-29 2010-09-21 Ind Tech Res Inst Thin film solar cell module of see-through type
US7982126B2 (en) 2007-05-21 2011-07-19 Macfarlane Alexander T Photovoltaic module with improved heat transfer and recovery potential
WO2009041658A1 (ja) 2007-09-28 2009-04-02 Fujifilm Corporation 太陽電池用基板および太陽電池
JP5255806B2 (ja) 2007-09-28 2013-08-07 東京エレクトロン株式会社 成膜装置の制御方法、成膜方法および成膜装置
US8771419B2 (en) 2007-10-05 2014-07-08 Solopower Systems, Inc. Roll to roll evaporation tool for solar absorber precursor formation
CN101785112A (zh) 2007-12-13 2010-07-21 第一太阳能有限公司 光伏模块的并联互连接的系统和方法
JP4384237B2 (ja) 2008-05-19 2009-12-16 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
JP4637244B2 (ja) 2009-01-09 2011-02-23 シャープ株式会社 薄膜太陽電池モジュール
US8709856B2 (en) 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
JP5229901B2 (ja) 2009-03-09 2013-07-03 富士フイルム株式会社 光電変換素子、及び太陽電池
WO2010106534A1 (en) * 2009-03-16 2010-09-23 Brightview Systems Ltd. Measurement of thin film photovoltaic solar panels
JP5185171B2 (ja) 2009-03-24 2013-04-17 本田技研工業株式会社 薄膜太陽電池の光吸収層の形成方法
US8236599B2 (en) 2009-04-09 2012-08-07 State of Oregon acting by and through the State Board of Higher Education Solution-based process for making inorganic materials
US7785921B1 (en) 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
EP2432024A4 (en) 2009-04-14 2013-11-27 Mitsubishi Electric Corp PHOTOVOLTAIC ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
EP2463929A4 (en) 2009-08-04 2013-10-02 Mitsubishi Chem Corp PHOTOELECTRIC CONVERTER ELEMENT AND SOLAR CELL THEREWITH
KR101031246B1 (ko) 2009-09-16 2011-04-29 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법, 및 그를 이용한 박막형 태양전지 모듈 및 태양광 발전 시스템
TW201112438A (en) 2009-09-25 2011-04-01 Zhi-Huang Lai Target, manufacturing process of manufacturing thin film solar cell and the products thereof
WO2011040645A1 (en) 2009-09-30 2011-04-07 Fujifilm Corporation Photoelectric conversion device, method for producing the same, and solar battery
JP2011100976A (ja) 2009-10-09 2011-05-19 Fujifilm Corp 光電変換素子とその製造方法、及び太陽電池
DE112010004478T5 (de) 2009-11-17 2012-10-11 Mitsubishi Electric Corporation Dünnschichtsolarzelle und Verfahren zu deren Herstellung
WO2011066204A1 (en) 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company Syntheses of quaternary chalcogenides in cesium, rubidium, barium and lanthanum containing fluxes
US20120258567A1 (en) 2009-12-07 2012-10-11 Solopower, Inc. Reaction methods to form group ibiiiavia thin film solar cell absorbers
US8889469B2 (en) 2009-12-28 2014-11-18 Aeris Capital Sustainable Ip Ltd. Multi-nary group IB and VIA based semiconductor
JP2011155237A (ja) 2009-12-28 2011-08-11 Hitachi Ltd 化合物薄膜太陽電池、化合物薄膜太陽電池の製造方法、および化合物薄膜太陽電池モジュール
US8088224B2 (en) 2010-01-15 2012-01-03 Solopower, Inc. Roll-to-roll evaporation system and method to manufacture group IBIIAVIA photovoltaics
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
JP2011176287A (ja) 2010-02-01 2011-09-08 Fujifilm Corp 光電変換素子、薄膜太陽電池および光電変換素子の製造方法
US20120006395A1 (en) 2010-07-08 2012-01-12 E. I. Du Pont De Nemours And Company Coated stainless steel substrate
EP2408023A1 (en) 2010-07-16 2012-01-18 Applied Materials, Inc. Thin-film Solar Fabrication Process, Deposition method for TCO layer, and Solar cell precursor layer stack
US20120064352A1 (en) 2010-09-14 2012-03-15 E. I. Du Pont De Nemours And Company Articles comprising a glass - flexible stainless steel composite layer
WO2012037242A2 (en) 2010-09-14 2012-03-22 E. I. Du Pont De Nemours And Company Glass-coated flexible substrates for photovoltaic cells
US8828782B2 (en) 2010-09-15 2014-09-09 Precursor Energetics, Inc. Annealing processes for photovoltaics
KR101075873B1 (ko) 2010-10-04 2011-10-25 한국에너지기술연구원 페이스트 또는 잉크를 이용한 구리인듐셀렌계 또는 구리인듐갈륨셀렌계 박막의 제조 방법
US20120214293A1 (en) 2011-02-22 2012-08-23 Serdar Aksu Electrodepositing doped cigs thin films for photovoltaic devices
US8404512B1 (en) * 2011-03-04 2013-03-26 Solopower, Inc. Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
US20130160831A1 (en) 2011-12-22 2013-06-27 Miasole Reactive Sputtering of ZnS(O,H) and InS(O,H) for Use as a Buffer Layer
US9837565B2 (en) 2012-12-21 2017-12-05 Flison Ag Fabricating thin-film optoelectronic devices with added potassium
JP6103525B2 (ja) 2013-02-12 2017-03-29 日東電工株式会社 Ｃｉｇｓ膜およびそれを用いたｃｉｇｓ太陽電池
US8889466B2 (en) * 2013-04-12 2014-11-18 International Business Machines Corporation Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells
KR102098100B1 (ko) 2013-09-17 2020-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) * 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
US10658532B2 (en) 2016-02-11 2020-05-19 Flisom Ag Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
EP3414779B1 (en) 2016-02-11 2021-01-13 Flisom AG Self-assembly patterning for fabricating thin-film devices

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US10109761B2 (en) 2018-10-23
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US10672941B2 (en) 2020-06-02
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US20170133547A1 (en) 2017-05-11
US10431709B2 (en) 2019-10-01
US20190378951A1 (en) 2019-12-12
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WO2015177748A3 (en) 2016-01-28
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