HUE051167T2 - Eljárás szilícium lapkák válogatására tömeges élettartamuk alapján - Google Patents
Eljárás szilícium lapkák válogatására tömeges élettartamuk alapjánInfo
- Publication number
- HUE051167T2 HUE051167T2 HUE17771815A HUE17771815A HUE051167T2 HU E051167 T2 HUE051167 T2 HU E051167T2 HU E17771815 A HUE17771815 A HU E17771815A HU E17771815 A HUE17771815 A HU E17771815A HU E051167 T2 HUE051167 T2 HU E051167T2
- Authority
- HU
- Hungary
- Prior art keywords
- silicon wafers
- wafers according
- bulk lifetime
- sorting silicon
- sorting
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/34—Sorting according to other particular properties
- B07C5/344—Sorting according to other particular properties according to electric or electromagnetic properties
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1658368A FR3055563B1 (fr) | 2016-09-08 | 2016-09-08 | Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique |
Publications (1)
Publication Number | Publication Date |
---|---|
HUE051167T2 true HUE051167T2 (hu) | 2021-03-01 |
Family
ID=57137186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HUE17771815A HUE051167T2 (hu) | 2016-09-08 | 2017-09-07 | Eljárás szilícium lapkák válogatására tömeges élettartamuk alapján |
Country Status (8)
Country | Link |
---|---|
US (1) | US11077469B2 (hu) |
EP (1) | EP3510640B1 (hu) |
KR (1) | KR102491594B1 (hu) |
CN (1) | CN109844966B (hu) |
CA (1) | CA3036402A1 (hu) |
FR (1) | FR3055563B1 (hu) |
HU (1) | HUE051167T2 (hu) |
WO (1) | WO2018046855A1 (hu) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3055563B1 (fr) * | 2016-09-08 | 2018-09-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique |
EP3623801B1 (en) | 2018-09-14 | 2022-11-02 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for determining the thermal donor concentration of a semiconductor sample |
FR3118283B1 (fr) * | 2020-12-18 | 2023-11-24 | Commissariat Energie Atomique | Procédé de détermination de la durée de vie volumique des porteurs de charge d'un substrat et dispositif associé |
TWI759237B (zh) * | 2021-07-21 | 2022-03-21 | 環球晶圓股份有限公司 | 晶錠評估方法 |
CN115896930A (zh) * | 2021-08-25 | 2023-04-04 | Tcl中环新能源科技股份有限公司 | 一种直拉单晶制程中的自动控制吸料方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3372003A (en) * | 1963-07-19 | 1968-03-05 | Shin Nippon Chisso Hiryo Kabus | Apparatus and method for producing silicon single crystals for semiconductor |
US3865554A (en) * | 1971-09-23 | 1975-02-11 | Little Inc A | Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique |
JPH05129404A (ja) * | 1991-11-05 | 1993-05-25 | Kawasaki Steel Corp | ウエーハの評価方法 |
JP3341378B2 (ja) * | 1993-08-25 | 2002-11-05 | 富士通株式会社 | シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法 |
DE60144416D1 (de) * | 2000-01-25 | 2011-05-26 | Shinetsu Handotai Kk | Verfahren zur bestimmung unter welchen konditionen der siliziumeinkristall hergestellt wurde und verfahren zur herstellung des siliziumwafers |
EP1780781B1 (en) * | 2004-06-30 | 2019-08-07 | SUMCO Corporation | Process for producing silicon wafer |
JP4760729B2 (ja) | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
DE102006049683B3 (de) * | 2006-10-13 | 2008-05-29 | Q-Cells Ag | Verfahren und Vorrichtung zum Charakterisieren von Wafern bei der Herstellung von Solarzellen |
US8742372B2 (en) * | 2009-07-20 | 2014-06-03 | Bt Imaging Pty Ltd | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
JP5295924B2 (ja) * | 2009-10-06 | 2013-09-18 | 株式会社神戸製鋼所 | 半導体キャリア寿命測定装置および該方法 |
JP5659632B2 (ja) | 2010-08-27 | 2015-01-28 | 株式会社Sumco | ボロンドープp型シリコンウェーハの鉄濃度分析方法および分析装置、シリコンウェーハ、ならびにシリコンウェーハの製造方法 |
FR2964459B1 (fr) * | 2010-09-02 | 2012-09-28 | Commissariat Energie Atomique | Procede de cartographie de la concentration en oxygene |
JP2012142455A (ja) | 2010-12-29 | 2012-07-26 | Siltronic Ag | アニールウエハの製造方法 |
JP5561217B2 (ja) * | 2011-03-18 | 2014-07-30 | 信越半導体株式会社 | ライフタイム値の測定方法及びこれを用いたウエーハの選別方法 |
JP5925620B2 (ja) | 2011-07-08 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 半導体基板の解析方法 |
US8604447B2 (en) * | 2011-07-27 | 2013-12-10 | Kla-Tencor Corporation | Solar metrology methods and apparatus |
FR2978548A1 (fr) * | 2011-07-27 | 2013-02-01 | Commissariat Energie Atomique | Determination des teneurs en dopants dans un echantillon de silicium compense |
CN103874918A (zh) * | 2011-08-12 | 2014-06-18 | Bt成像股份有限公司 | 半导体晶片中掺杂变化的光致发光成像 |
FR2997096B1 (fr) * | 2012-10-23 | 2014-11-28 | Commissariat Energie Atomique | Procede de formation d'un lingot en silicium de resistivite uniforme |
JP6020311B2 (ja) * | 2013-04-02 | 2016-11-02 | 信越半導体株式会社 | 半導体ウェーハの製造方法及び半導体インゴットの切断位置決定システム |
FR3009380B1 (fr) * | 2013-08-02 | 2015-07-31 | Commissariat Energie Atomique | Procede de localisation d'une plaquette dans son lingot |
JP6490671B2 (ja) * | 2014-04-18 | 2019-04-03 | 国立大学法人九州工業大学 | 半導体ウェーハのバルク品質評価方法および装置 |
JP2016056050A (ja) * | 2014-09-09 | 2016-04-21 | シャープ株式会社 | 単結晶シリコンインゴットの検査方法、それを用いた単結晶シリコン材料の製造方法および電子デバイスの製造方法 |
FR3055563B1 (fr) * | 2016-09-08 | 2018-09-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique |
-
2016
- 2016-09-08 FR FR1658368A patent/FR3055563B1/fr not_active Expired - Fee Related
-
2017
- 2017-09-07 CN CN201780061212.2A patent/CN109844966B/zh active Active
- 2017-09-07 CA CA3036402A patent/CA3036402A1/fr active Pending
- 2017-09-07 WO PCT/FR2017/052375 patent/WO2018046855A1/fr unknown
- 2017-09-07 HU HUE17771815A patent/HUE051167T2/hu unknown
- 2017-09-07 US US16/331,702 patent/US11077469B2/en active Active
- 2017-09-07 KR KR1020197009760A patent/KR102491594B1/ko active IP Right Grant
- 2017-09-07 EP EP17771815.2A patent/EP3510640B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
WO2018046855A1 (fr) | 2018-03-15 |
KR20190046958A (ko) | 2019-05-07 |
US20190247889A1 (en) | 2019-08-15 |
FR3055563A1 (fr) | 2018-03-09 |
CA3036402A1 (fr) | 2018-03-15 |
CN109844966A (zh) | 2019-06-04 |
KR102491594B1 (ko) | 2023-01-25 |
FR3055563B1 (fr) | 2018-09-14 |
EP3510640A1 (fr) | 2019-07-17 |
CN109844966B (zh) | 2023-02-17 |
EP3510640B1 (fr) | 2020-08-05 |
US11077469B2 (en) | 2021-08-03 |
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