HK97887A - Virtual phase charge transfer device - Google Patents

Virtual phase charge transfer device

Info

Publication number
HK97887A
HK97887A HK978/87A HK97887A HK97887A HK 97887 A HK97887 A HK 97887A HK 978/87 A HK978/87 A HK 978/87A HK 97887 A HK97887 A HK 97887A HK 97887 A HK97887 A HK 97887A
Authority
HK
Hong Kong
Prior art keywords
potential
gate
phi
region
charge transfer
Prior art date
Application number
HK978/87A
Other languages
English (en)
Inventor
Hynecek Jaroslav
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of HK97887A publication Critical patent/HK97887A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK978/87A 1978-05-16 1987-12-24 Virtual phase charge transfer device HK97887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/906,385 US4229752A (en) 1978-05-16 1978-05-16 Virtual phase charge transfer device

Publications (1)

Publication Number Publication Date
HK97887A true HK97887A (en) 1987-12-31

Family

ID=25422352

Family Applications (1)

Application Number Title Priority Date Filing Date
HK978/87A HK97887A (en) 1978-05-16 1987-12-24 Virtual phase charge transfer device

Country Status (5)

Country Link
US (1) US4229752A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS596072B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2919522A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2021313B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
HK (1) HK97887A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US4499496A (en) * 1981-09-17 1985-02-12 Canon Kabushiki Kaisha Solid state image sensing device
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US5317455A (en) * 1982-07-07 1994-05-31 Canon Kabushiki Kaisha Recording system which can record signals from two fields for the composition of one picture
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US4577232A (en) * 1984-08-31 1986-03-18 Texas Instruments Incorporated Line addressed charge coupled imager
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US4821081A (en) * 1985-08-27 1989-04-11 Texas Instruments Incorporated Large pitch CCD with high charge transfer efficiency
US4673963A (en) * 1985-08-27 1987-06-16 Texas Instruments Incorporated High well capacity CCD imager
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US4814844A (en) * 1986-12-12 1989-03-21 The United States Of America As Represented By The Secretary Of The Air Force Split two-phase CCD clocking gate apparatus
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US4900688A (en) * 1987-06-25 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation
US4995061A (en) * 1987-12-17 1991-02-19 Texas Instruments Incorporated Two-phase CCD imager cell for TV interlace operation
US5134087A (en) * 1987-12-17 1992-07-28 Texas Instruments Incorporated Fabricating a two-phase CCD imager cell for TV interlace operation
US5252509A (en) * 1988-03-15 1993-10-12 Texas Instruments Incorporated Ccd imager responsive to long wavelength radiation
US5159419A (en) * 1988-03-15 1992-10-27 Texas Instruments Incorporated CCD imager responsive to long wavelength radiation
US5114833A (en) * 1988-08-29 1992-05-19 Eastman Kodak Company Charge-coupled device and process of making the device
US4908518A (en) * 1989-02-10 1990-03-13 Eastman Kodak Company Interline transfer CCD image sensing device with electrode structure for each pixel
JPH0779163B2 (ja) * 1989-02-28 1995-08-23 松下電器産業株式会社 半導体装置およびその製造方法
US5325412A (en) * 1989-05-23 1994-06-28 U.S. Philips Corporation Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement
US4992392A (en) * 1989-12-28 1991-02-12 Eastman Kodak Company Method of making a virtual phase CCD
US5151380A (en) * 1991-08-19 1992-09-29 Texas Instruments Incorporated Method of making top buss virtual phase frame interline transfer CCD image sensor
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
US5402459A (en) * 1993-05-10 1995-03-28 Texas Instruments Incorporated Frame transfer image sensor with electronic shutter
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5449908A (en) * 1993-12-30 1995-09-12 Texas Instruments Incorporated Hybrid CCD imaging
US5502318A (en) * 1994-02-14 1996-03-26 Texas Instruments Incorporated Bipolar gate charge coupled device with clocked virtual phase
US5430481A (en) * 1994-03-30 1995-07-04 Texas Instruments Incorporated Multimode frame transfer image sensor
US5491354A (en) * 1994-08-19 1996-02-13 Texas Instruments Incorporated Floating gate charge detection node
JPH0883901A (ja) * 1994-08-29 1996-03-26 Texas Instr Inc <Ti> Ｃｃｄの電荷検出装置
US5516716A (en) * 1994-12-02 1996-05-14 Eastman Kodak Company Method of making a charge coupled device with edge aligned implants and electrodes
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5652150A (en) * 1995-06-07 1997-07-29 Texas Instruments Incorporated Hybrid CCD imaging
US5719075A (en) * 1995-07-31 1998-02-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
US5825840A (en) * 1996-04-23 1998-10-20 Eastman Kodak Company Interline sensor employing photocapacitor gate
US5837563A (en) * 1996-08-26 1998-11-17 Texas Instruments Incorporated Self aligned barrier process for small pixel virtual phase charged coupled devices
US5963251A (en) * 1997-02-03 1999-10-05 Trw Inc. Frame transfer readout correction
US6833613B1 (en) * 1997-12-18 2004-12-21 Micron Technology, Inc. Stacked semiconductor package having laser machined contacts
US6465820B1 (en) 1998-09-16 2002-10-15 Dalsa, Inc. CMOS compatible single phase CCD charge transfer device
US6680222B2 (en) * 1999-11-05 2004-01-20 Isetex, Inc Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making
US6369413B1 (en) * 1999-11-05 2002-04-09 Isetex, Inc. Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making
US7247892B2 (en) * 2000-04-24 2007-07-24 Taylor Geoff W Imaging array utilizing thyristor-based pixel elements
US6870207B2 (en) 2000-04-24 2005-03-22 The University Of Connecticut III-V charge coupled device suitable for visible, near and far infra-red detection
US7235824B1 (en) * 2000-08-09 2007-06-26 Dalsa, Inc. Active gate CCD image sensor
US7265397B1 (en) 2000-08-30 2007-09-04 Sarnoff Corporation CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture
US6818483B2 (en) * 2002-07-16 2004-11-16 Fairchild Imaging Large area, fast frame rate charge coupled device
US20040012688A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Large area charge coupled device camera
US20040012684A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Image reconstruction techniques for charge coupled devices
US20040012689A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Charge coupled devices in tiled arrays
US20050029553A1 (en) * 2003-08-04 2005-02-10 Jaroslav Hynecek Clocked barrier virtual phase charge coupled device image sensor
US7541627B2 (en) * 2004-03-08 2009-06-02 Foveon, Inc. Method and apparatus for improving sensitivity in vertical color CMOS image sensors
US7851822B2 (en) * 2006-06-27 2010-12-14 Eastman Kodak Company Full frame ITO pixel with improved optical symmetry
EP2147465B1 (en) 2007-03-30 2016-02-24 Panasonic Intellectual Property Management Co., Ltd. Ccd image pickup device with twofold frame storage portion and method for using the device

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Also Published As

Publication number Publication date
JPS57164567A (en) 1982-10-09
GB2021313A (en) 1979-11-28
JPS596072B2 (ja) 1984-02-08
JPS5511394A (en) 1980-01-26
JPS608634B2 (ja) 1985-03-04
GB2021313B (en) 1982-09-02
DE2919522A1 (de) 1979-11-22
DE2919522C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-25
US4229752A (en) 1980-10-21

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Legal Events

Date Code Title Description
PE Patent expired