HK97887A - Virtual phase charge transfer device - Google Patents

Virtual phase charge transfer device

Info

Publication number
HK97887A
HK97887A HK978/87A HK97887A HK97887A HK 97887 A HK97887 A HK 97887A HK 978/87 A HK978/87 A HK 978/87A HK 97887 A HK97887 A HK 97887A HK 97887 A HK97887 A HK 97887A
Authority
HK
Hong Kong
Prior art keywords
transfer device
charge transfer
phase charge
virtual phase
virtual
Prior art date
Application number
HK978/87A
Other languages
English (en)
Inventor
Jaroslav Hynecek
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of HK97887A publication Critical patent/HK97887A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK978/87A 1978-05-16 1987-12-24 Virtual phase charge transfer device HK97887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/906,385 US4229752A (en) 1978-05-16 1978-05-16 Virtual phase charge transfer device

Publications (1)

Publication Number Publication Date
HK97887A true HK97887A (en) 1987-12-31

Family

ID=25422352

Family Applications (1)

Application Number Title Priority Date Filing Date
HK978/87A HK97887A (en) 1978-05-16 1987-12-24 Virtual phase charge transfer device

Country Status (5)

Country Link
US (1) US4229752A (xx)
JP (2) JPS596072B2 (xx)
DE (1) DE2919522A1 (xx)
GB (1) GB2021313B (xx)
HK (1) HK97887A (xx)

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US4994875A (en) * 1978-05-16 1991-02-19 Texas Instruments Incorporated Virtual phase charge transfer device
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US4499496A (en) * 1981-09-17 1985-02-12 Canon Kabushiki Kaisha Solid state image sensing device
JPS5848455A (ja) * 1981-09-17 1983-03-22 Canon Inc 電荷転送素子
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
US4603354A (en) * 1982-06-09 1986-07-29 Canon Kabushiki Kaisha Image pickup device
US5317455A (en) * 1982-07-07 1994-05-31 Canon Kabushiki Kaisha Recording system which can record signals from two fields for the composition of one picture
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US4779124A (en) * 1984-06-08 1988-10-18 Texas Instruments Incorporated Virtual phase buried channel CCD
US4679212A (en) * 1984-07-31 1987-07-07 Texas Instruments Incorporated Method and apparatus for using surface trap recombination in solid state imaging devices
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US4577232A (en) * 1984-08-31 1986-03-18 Texas Instruments Incorporated Line addressed charge coupled imager
DD236625A1 (de) * 1985-01-22 1986-06-11 Werk Fernsehelektronik Veb Ccd-matrix mit spaltentransfer und punktweisem anti-blooming
US4725872A (en) * 1985-02-25 1988-02-16 Tektronix, Inc. Fast channel single phase buried channel CCD
US4906584A (en) * 1985-02-25 1990-03-06 Tektronix, Inc. Fast channel single phase buried channel CCD
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US4642877A (en) * 1985-07-01 1987-02-17 Texas Instruments Incorporated Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices
US4673963A (en) * 1985-08-27 1987-06-16 Texas Instruments Incorporated High well capacity CCD imager
US4821081A (en) * 1985-08-27 1989-04-11 Texas Instruments Incorporated Large pitch CCD with high charge transfer efficiency
US4668971A (en) * 1985-08-27 1987-05-26 Texas Instruments Incorporated CCD imager with JFET peripherals
US4746622A (en) * 1986-10-07 1988-05-24 Eastman Kodak Company Process for preparing a charge coupled device with charge transfer direction biasing implants
US4807004A (en) * 1986-11-26 1989-02-21 Texas Instruments Incorporated Tin oxide CCD imager
US4814844A (en) * 1986-12-12 1989-03-21 The United States Of America As Represented By The Secretary Of The Air Force Split two-phase CCD clocking gate apparatus
US4742016A (en) * 1987-03-30 1988-05-03 Eastman Kodak Company Method of manufacture of a two-phase CCD
US4732868A (en) * 1987-03-30 1988-03-22 Eastman Kodak Company Method of manufacture of a uniphase CCD
US4900688A (en) * 1987-06-25 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation
US5134087A (en) * 1987-12-17 1992-07-28 Texas Instruments Incorporated Fabricating a two-phase CCD imager cell for TV interlace operation
US4995061A (en) * 1987-12-17 1991-02-19 Texas Instruments Incorporated Two-phase CCD imager cell for TV interlace operation
US5159419A (en) * 1988-03-15 1992-10-27 Texas Instruments Incorporated CCD imager responsive to long wavelength radiation
US5252509A (en) * 1988-03-15 1993-10-12 Texas Instruments Incorporated Ccd imager responsive to long wavelength radiation
US5114833A (en) * 1988-08-29 1992-05-19 Eastman Kodak Company Charge-coupled device and process of making the device
US4908518A (en) * 1989-02-10 1990-03-13 Eastman Kodak Company Interline transfer CCD image sensing device with electrode structure for each pixel
JPH0779163B2 (ja) * 1989-02-28 1995-08-23 松下電器産業株式会社 半導体装置およびその製造方法
US5325412A (en) * 1989-05-23 1994-06-28 U.S. Philips Corporation Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement
US4992392A (en) * 1989-12-28 1991-02-12 Eastman Kodak Company Method of making a virtual phase CCD
US5151380A (en) * 1991-08-19 1992-09-29 Texas Instruments Incorporated Method of making top buss virtual phase frame interline transfer CCD image sensor
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
US5402459A (en) * 1993-05-10 1995-03-28 Texas Instruments Incorporated Frame transfer image sensor with electronic shutter
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5449908A (en) * 1993-12-30 1995-09-12 Texas Instruments Incorporated Hybrid CCD imaging
US5502318A (en) * 1994-02-14 1996-03-26 Texas Instruments Incorporated Bipolar gate charge coupled device with clocked virtual phase
US5430481A (en) * 1994-03-30 1995-07-04 Texas Instruments Incorporated Multimode frame transfer image sensor
US5491354A (en) * 1994-08-19 1996-02-13 Texas Instruments Incorporated Floating gate charge detection node
JPH0883901A (ja) * 1994-08-29 1996-03-26 Texas Instr Inc <Ti> Ｃｃｄの電荷検出装置
US5516716A (en) * 1994-12-02 1996-05-14 Eastman Kodak Company Method of making a charge coupled device with edge aligned implants and electrodes
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5652150A (en) * 1995-06-07 1997-07-29 Texas Instruments Incorporated Hybrid CCD imaging
US5719075A (en) * 1995-07-31 1998-02-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
US5825840A (en) * 1996-04-23 1998-10-20 Eastman Kodak Company Interline sensor employing photocapacitor gate
US5837563A (en) * 1996-08-26 1998-11-17 Texas Instruments Incorporated Self aligned barrier process for small pixel virtual phase charged coupled devices
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US6680222B2 (en) * 1999-11-05 2004-01-20 Isetex, Inc Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making
US6369413B1 (en) * 1999-11-05 2002-04-09 Isetex, Inc. Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making
US6870207B2 (en) 2000-04-24 2005-03-22 The University Of Connecticut III-V charge coupled device suitable for visible, near and far infra-red detection
US7247892B2 (en) * 2000-04-24 2007-07-24 Taylor Geoff W Imaging array utilizing thyristor-based pixel elements
US7235824B1 (en) * 2000-08-09 2007-06-26 Dalsa, Inc. Active gate CCD image sensor
US7265397B1 (en) 2000-08-30 2007-09-04 Sarnoff Corporation CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture
US20040012689A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Charge coupled devices in tiled arrays
US20040012684A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Image reconstruction techniques for charge coupled devices
US6818483B2 (en) * 2002-07-16 2004-11-16 Fairchild Imaging Large area, fast frame rate charge coupled device
US20040012688A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Large area charge coupled device camera
US20050029553A1 (en) * 2003-08-04 2005-02-10 Jaroslav Hynecek Clocked barrier virtual phase charge coupled device image sensor
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Also Published As

Publication number Publication date
JPS608634B2 (ja) 1985-03-04
JPS5511394A (en) 1980-01-26
DE2919522C2 (xx) 1992-06-25
DE2919522A1 (de) 1979-11-22
JPS57164567A (en) 1982-10-09
US4229752A (en) 1980-10-21
GB2021313B (en) 1982-09-02
GB2021313A (en) 1979-11-28
JPS596072B2 (ja) 1984-02-08

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Legal Events

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PE Patent expired