GB2025135B - Bulk-channel charge coupled device - Google Patents

Bulk-channel charge coupled device

Info

Publication number
GB2025135B
GB2025135B GB7923863A GB7923863A GB2025135B GB 2025135 B GB2025135 B GB 2025135B GB 7923863 A GB7923863 A GB 7923863A GB 7923863 A GB7923863 A GB 7923863A GB 2025135 B GB2025135 B GB 2025135B
Authority
GB
United Kingdom
Prior art keywords
bulk
coupled device
charge coupled
channel charge
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7923863A
Other versions
GB2025135A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB7923863A priority Critical patent/GB2025135B/en
Publication of GB2025135A publication Critical patent/GB2025135A/en
Application granted granted Critical
Publication of GB2025135B publication Critical patent/GB2025135B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB7923863A 1978-04-10 1979-07-09 Bulk-channel charge coupled device Expired GB2025135B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7923863A GB2025135B (en) 1978-04-10 1979-07-09 Bulk-channel charge coupled device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1393678 1978-04-10
GB7923863A GB2025135B (en) 1978-04-10 1979-07-09 Bulk-channel charge coupled device

Publications (2)

Publication Number Publication Date
GB2025135A GB2025135A (en) 1980-01-16
GB2025135B true GB2025135B (en) 1982-05-12

Family

ID=26250129

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7923863A Expired GB2025135B (en) 1978-04-10 1979-07-09 Bulk-channel charge coupled device

Country Status (1)

Country Link
GB (1) GB2025135B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848464A (en) * 1981-09-17 1983-03-22 Nec Corp Charge transfer device
JPH0772999B2 (en) * 1986-03-13 1995-08-02 ソニー株式会社 Semiconductor device
US5325412A (en) * 1989-05-23 1994-06-28 U.S. Philips Corporation Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement

Also Published As

Publication number Publication date
GB2025135A (en) 1980-01-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940709