JPS5559771A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5559771A
JPS5559771A JP13604779A JP13604779A JPS5559771A JP S5559771 A JPS5559771 A JP S5559771A JP 13604779 A JP13604779 A JP 13604779A JP 13604779 A JP13604779 A JP 13604779A JP S5559771 A JPS5559771 A JP S5559771A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
charge
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13604779A
Other languages
Japanese (ja)
Inventor
Buruzaa Nazan
Rosu Ranpu Donarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5559771A publication Critical patent/JPS5559771A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP13604779A 1978-10-23 1979-10-23 Charge transfer device Pending JPS5559771A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95380878A 1978-10-23 1978-10-23

Publications (1)

Publication Number Publication Date
JPS5559771A true JPS5559771A (en) 1980-05-06

Family

ID=25494554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13604779A Pending JPS5559771A (en) 1978-10-23 1979-10-23 Charge transfer device

Country Status (3)

Country Link
JP (1) JPS5559771A (en)
DE (1) DE2942827A1 (en)
FR (1) FR2440079A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021140A (en) * 1988-01-08 1990-01-05 Nec Corp Charge transfer device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007766A1 (en) * 1987-03-23 1988-10-06 Eastman Kodak Company Ccd electrometer architecture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB299480I5 (en) * 1972-10-20
US4035667A (en) * 1975-12-02 1977-07-12 International Business Machines Corporation Input circuit for inserting charge packets into a charge-transfer-device
US4118795A (en) * 1976-08-27 1978-10-03 Texas Instruments Incorporated Two-phase CCD regenerator - I/O circuits
DE2654316A1 (en) * 1976-11-30 1978-06-01 Siemens Ag Charge coupled semiconductor device with insulating layer capacitors - has several contacts on substrate surface with adjacent majority carrier depletion zones

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021140A (en) * 1988-01-08 1990-01-05 Nec Corp Charge transfer device

Also Published As

Publication number Publication date
DE2942827A1 (en) 1980-04-30
FR2440079A1 (en) 1980-05-23

Similar Documents

Publication Publication Date Title
JPS5511394A (en) Charge transfer device
JPS5591185A (en) Multiispectrum charge coupled device
JPS5390842A (en) Charge transfer device
GB2024507B (en) Charge coupled device
JPS5591869A (en) Charge coupled device
GB2022920B (en) Electric charge transfer devices
JPS55157263A (en) Charge transfer device
JPS5586158A (en) Semiconductor charge transfer device
JPS54152588A (en) Charging device
JPS54107684A (en) Charge coupled device
GB2061650B (en) Charge transfer device
JPS5619668A (en) Charge coupled device
JPS5437550A (en) Charge transfer device
JPS55113374A (en) Charge coupled device
JPS5559772A (en) Charge transfer device
GB2038582B (en) Charge transfer devices
JPS5536991A (en) Charge transfer device
GB2005948B (en) Charge transfer devices
JPS5589994A (en) Charge transfer device
GB2018219B (en) Load transfer device
JPS54160181A (en) Charge transfer device
GB2004692B (en) Charge transfer devices
GB2024653B (en) Mass transfer device
JPS5534494A (en) Charge coupled device
GB2081017B (en) Charge transfer device