HK75884A - Method of manufacturing single crystals - Google Patents

Method of manufacturing single crystals

Info

Publication number
HK75884A
HK75884A HK758/84A HK75884A HK75884A HK 75884 A HK75884 A HK 75884A HK 758/84 A HK758/84 A HK 758/84A HK 75884 A HK75884 A HK 75884A HK 75884 A HK75884 A HK 75884A
Authority
HK
Hong Kong
Prior art keywords
single crystals
manufacturing single
manufacturing
crystals
Prior art date
Application number
HK758/84A
Other languages
English (en)
Inventor
Johannes Petrus Maria Damen
Tehodorus Josephus Berben
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of HK75884A publication Critical patent/HK75884A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00—Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Iron (AREA)
HK758/84A 1980-09-24 1984-10-04 Method of manufacturing single crystals HK75884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8005312A NL8005312A (nl) 1980-09-24 1980-09-24 Werkwijze voor het vervaardigen van ferriet eenkristallen.

Publications (1)

Publication Number Publication Date
HK75884A true HK75884A (en) 1984-10-12

Family

ID=19835929

Family Applications (1)

Application Number Title Priority Date Filing Date
HK758/84A HK75884A (en) 1980-09-24 1984-10-04 Method of manufacturing single crystals

Country Status (8)

Country Link
US (1) US4379021A (nl)
JP (1) JPS6021957B2 (nl)
KR (1) KR880001425B1 (nl)
DE (1) DE3137741A1 (nl)
GB (1) GB2084483B (nl)
HK (1) HK75884A (nl)
NL (1) NL8005312A (nl)
SG (1) SG42684G (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997592A (ja) * 1982-11-22 1984-06-05 Tohoku Metal Ind Ltd 単結晶の製造方法
JPS6042293A (ja) * 1983-08-18 1985-03-06 Sony Corp 単結晶の製造方法
GB2147223A (en) * 1983-10-01 1985-05-09 Stc Plc Semiconductor substrates
US5231397A (en) * 1984-03-30 1993-07-27 Datajet, Inc. Extreme waveform coding
DE3644746A1 (de) * 1986-12-30 1988-07-14 Hagen Hans Dr Ing Verfahren und vorrichtung zum zuechten von kristallen
DE3865628D1 (de) * 1987-11-02 1991-11-21 Mitsubishi Materials Corp Einrichtung zur zuechtung von kristallen.
US5049454A (en) * 1988-07-04 1991-09-17 U.S. Philips Corporation Monocrystalline MnZn-ferroferrite material having a high content of Zn, and a magnetic head manufactured from said material
US5057287A (en) * 1988-11-01 1991-10-15 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
KR0157323B1 (ko) * 1991-12-31 1999-02-18 황선두 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
JP3478406B2 (ja) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン 粒状物質の供給装置
JP6629886B2 (ja) * 2016-06-29 2020-01-15 株式会社クリスタルシステム 単結晶製造装置
KR20190021649A (ko) 2017-08-23 2019-03-06 세메스 주식회사 방화 셔터
CN108130590A (zh) * 2017-12-19 2018-06-08 佛山市毅力机械制造有限公司 一种焰熔法多色宝石结晶炉下料装置
WO2019186871A1 (ja) 2018-03-29 2019-10-03 株式会社クリスタルシステム 単結晶製造装置および単結晶製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2361382A (en) * 1942-08-18 1944-10-31 Louis Rosen Method of casting
US2905989A (en) * 1956-05-04 1959-09-29 Koppers Co Inc Method and apparatus for continuous casting of metals
US3060065A (en) * 1959-08-06 1962-10-23 Theodore H Orem Method for the growth of preferentially oriented single crystals of metals
DE1251272B (de) * 1962-04-18 1967-10-05 N. V. Philips' Gloeilampenrabrieken, Eindhoven (Niederlande) Verfahren und Vorrichtung zum Herstellen eines Stabes durch Aufziehen aus einer Schmelze
DE1244417B (de) * 1964-11-05 1967-07-13 Magnetfab Bonn Gmbh Metallischer Dauermagnetwerkstoff
JPS50131900A (nl) * 1974-04-09 1975-10-18
FR2377224A2 (fr) * 1977-01-14 1978-08-11 Ugine Kuhlmann Procede et dispositif de fabrication de monocristaux preformes a dopage multiple
JPS55128801A (en) * 1979-03-28 1980-10-06 Fuji Elelctrochem Co Ltd Manufacture of large single crystal of ferrite with uniform composition
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben

Also Published As

Publication number Publication date
DE3137741A1 (de) 1982-06-09
GB2084483B (en) 1984-02-15
GB2084483A (en) 1982-04-15
JPS6021957B2 (ja) 1985-05-30
KR830007435A (ko) 1983-10-21
SG42684G (en) 1985-02-08
NL8005312A (nl) 1982-04-16
KR880001425B1 (ko) 1988-08-08
US4379021A (en) 1983-04-05
JPS5782200A (en) 1982-05-22

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