HK30297A - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
HK30297A
HK30297A HK30297A HK30297A HK30297A HK 30297 A HK30297 A HK 30297A HK 30297 A HK30297 A HK 30297A HK 30297 A HK30297 A HK 30297A HK 30297 A HK30297 A HK 30297A
Authority
HK
Hong Kong
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
HK30297A
Other languages
English (en)
Inventor
Furuhata Tomoyuki
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of HK30297A publication Critical patent/HK30297A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
HK30297A 1988-05-10 1997-03-13 Method of manufacturing a semiconductor device HK30297A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63111421A JPH01282857A (ja) 1988-05-10 1988-05-10 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
HK30297A true HK30297A (en) 1997-03-21

Family

ID=14560749

Family Applications (1)

Application Number Title Priority Date Filing Date
HK30297A HK30297A (en) 1988-05-10 1997-03-13 Method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (1) US5059549A (xx)
EP (1) EP0341821B1 (xx)
JP (1) JPH01282857A (xx)
KR (1) KR930008983B1 (xx)
DE (1) DE68924366T2 (xx)
HK (1) HK30297A (xx)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348459A (ja) * 1989-04-26 1991-03-01 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US5124271A (en) * 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
US5281544A (en) * 1990-07-23 1994-01-25 Seiko Epson Corporation Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
US5387811A (en) * 1991-01-25 1995-02-07 Nec Corporation Composite semiconductor device with a particular bipolar structure
JP2950009B2 (ja) * 1992-02-26 1999-09-20 日本電気株式会社 ＢｉＣＭＯＳ集積回路装置及びその製造方法
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US6249030B1 (en) * 1992-12-07 2001-06-19 Hyundai Electronics Industries Co., Ltd. BI-CMOS integrated circuit
KR940018967A (ko) * 1993-01-30 1994-08-19 오가 노리오 반도체장치 및 그 제조방법
JP3244370B2 (ja) * 1993-12-20 2002-01-07 三菱電機株式会社 バイポーラトランジスタを有する半導体装置およびその製造方法
US5422290A (en) * 1994-02-28 1995-06-06 National Semiconductor Corporation Method of fabricating BiCMOS structures
US5455189A (en) * 1994-02-28 1995-10-03 National Semiconductor Corporation Method of forming BICMOS structures
JP2934738B2 (ja) 1994-03-18 1999-08-16 セイコーインスツルメンツ株式会社 半導体装置およびその製造方法
US5501991A (en) * 1994-07-13 1996-03-26 Winbond Electronics Corporation Process for making a bipolar junction transistor with a self-aligned base contact
JP2697631B2 (ja) * 1994-09-26 1998-01-14 日本電気株式会社 半導体装置の製造方法
JP3444002B2 (ja) * 1995-02-14 2003-09-08 ソニー株式会社 半導体装置およびその製造方法
JP3006825B2 (ja) * 1995-03-30 2000-02-07 日本電気株式会社 半導体集積回路装置の製造方法
US5780920A (en) * 1995-10-06 1998-07-14 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
JP2776350B2 (ja) * 1995-12-18 1998-07-16 日本電気株式会社 半導体集積回路装置の製造方法
US6245604B1 (en) * 1996-01-16 2001-06-12 Micron Technology Bipolar-CMOS (BiCMOS) process for fabricating integrated circuits
US5923078A (en) * 1996-07-11 1999-07-13 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
KR100235628B1 (ko) * 1997-06-25 1999-12-15 김영환 반도체 소자의 제조방법
US6130137A (en) * 1997-10-20 2000-10-10 Micron Technology, Inc. Method of forming a resistor and integrated circuitry having a resistor construction
JP2000340684A (ja) * 1999-05-31 2000-12-08 Sony Corp 半導体装置の製造方法
US6461925B1 (en) * 2000-03-30 2002-10-08 Motorola, Inc. Method of manufacturing a heterojunction BiCMOS integrated circuit
JP4003438B2 (ja) * 2001-11-07 2007-11-07 株式会社デンソー 半導体装置の製造方法および半導体装置
US6849495B2 (en) * 2003-02-28 2005-02-01 Infineon Technologies Ag Selective silicidation scheme for memory devices
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US9748012B2 (en) * 2010-12-21 2017-08-29 Konica Minolta, Inc. Method for manufacturing metal grating structure, metal grating structure manufactured by the method, and X-ray imaging device using the metal grating structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016596A (en) * 1975-06-19 1977-04-05 International Business Machines Corporation High performance integrated bipolar and complementary field effect transistors
US4225877A (en) * 1978-09-05 1980-09-30 Sprague Electric Company Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
US4673965A (en) * 1983-02-22 1987-06-16 General Motors Corporation Uses for buried contacts in integrated circuits
JPS60120552A (ja) * 1983-12-05 1985-06-28 Hitachi Ltd バイポ−ラｃｍｉｓデバイスならびにその製造方法
US4665424A (en) * 1984-03-30 1987-05-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
KR880005690A (ko) * 1986-10-06 1988-06-30 넬손 스톤 선택적인 에피켁샬층을 사용한 BiCMOS 제조방법
US4929570A (en) * 1986-10-06 1990-05-29 National Semiconductor Corporation Selective epitaxy BiCMOS process
US4902640A (en) * 1987-04-17 1990-02-20 Tektronix, Inc. High speed double polycide bipolar/CMOS integrated circuit process
KR900005353B1 (ko) * 1987-11-03 1990-07-27 삼성전자 주식회사 반도체 장치의 제조방법

Also Published As

Publication number Publication date
EP0341821B1 (en) 1995-09-27
EP0341821A2 (en) 1989-11-15
JPH01282857A (ja) 1989-11-14
DE68924366D1 (de) 1995-11-02
DE68924366T2 (de) 1996-04-11
US5059549A (en) 1991-10-22
KR900019023A (ko) 1990-12-22
KR930008983B1 (ko) 1993-09-17
EP0341821A3 (en) 1990-09-26

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20070406