HK1169215A1 - 極紫外光光源、極紫外光曝光系統，以及半導體設備生產方法 - Google Patents

極紫外光光源、極紫外光曝光系統，以及半導體設備生產方法

Info

Publication number
HK1169215A1
HK1169215A1 HK12109915.9A HK12109915A HK1169215A1 HK 1169215 A1 HK1169215 A1 HK 1169215A1 HK 12109915 A HK12109915 A HK 12109915A HK 1169215 A1 HK1169215 A1 HK 1169215A1
Authority
HK
Hong Kong
Prior art keywords
euv
light source
semiconductor device
production method
exposure system
Prior art date
Application number
HK12109915.9A
Other languages
English (en)
Inventor
Masayuki Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1169215A1 publication Critical patent/HK1169215A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
HK12109915.9A 2004-06-24 2012-10-09 極紫外光光源、極紫外光曝光系統，以及半導體設備生產方法 HK1169215A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004186132A JP4337648B2 (ja) 2004-06-24 2004-06-24 Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
HK1169215A1 true HK1169215A1 (zh) 2013-01-18

Family

ID=35779920

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12109915.9A HK1169215A1 (zh) 2004-06-24 2012-10-09 極紫外光光源、極紫外光曝光系統，以及半導體設備生產方法

Country Status (7)

Country Link
US (1) US7491955B2 (zh)
EP (2) EP1775755B1 (zh)
JP (1) JP4337648B2 (zh)
KR (1) KR101174926B1 (zh)
CN (1) CN1973357B (zh)
HK (1) HK1169215A1 (zh)
WO (1) WO2006006408A1 (zh)

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JP5149520B2 (ja) * 2007-03-08 2013-02-20 ギガフォトン株式会社 極端紫外光源装置
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JP5098019B2 (ja) * 2007-04-27 2012-12-12 ギガフォトン株式会社 極端紫外光源装置
JP5386799B2 (ja) 2007-07-06 2014-01-15 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、ｅｕｖ光放射方法、ｅｕｖ露光方法および電子デバイスの製造方法
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090095924A1 (en) * 2007-10-12 2009-04-16 International Business Machines Corporation Electrode design for euv discharge plasma source
NL1036614A1 (nl) * 2008-03-21 2009-09-22 Asml Netherlands Bv A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same.
TWI585298B (zh) 2008-04-04 2017-06-01 布魯克機械公司 利用錫銻合金的低溫泵及其使用方法
US8891058B2 (en) * 2008-07-18 2014-11-18 Koninklijke Philips N.V. Extreme UV radiation generating device comprising a contamination captor
EP2170021B1 (en) 2008-09-25 2015-11-04 ASML Netherlands B.V. Source module, radiation source and lithographic apparatus
JP5426317B2 (ja) 2008-10-23 2014-02-26 ギガフォトン株式会社 極端紫外光光源装置
JP2010110790A (ja) * 2008-11-06 2010-05-20 Miyachi Technos Corp ヒュージング方法
JP5574470B2 (ja) * 2009-06-12 2014-08-20 国立大学法人 宮崎大学 極端紫外光源および極端紫外光発生方法
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
KR101959369B1 (ko) * 2011-08-12 2019-03-18 에이에스엠엘 네델란즈 비.브이. 방사선 소스
JP5563012B2 (ja) * 2012-04-18 2014-07-30 ギガフォトン株式会社 極端紫外光源装置
CN103042221B (zh) * 2012-12-14 2015-04-15 华中科技大学 一种用于极紫外光源的高熔点材料液滴靶产生装置
DE102013212779A1 (de) * 2013-07-01 2014-07-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Reinigung eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage
TWI527085B (zh) * 2013-08-27 2016-03-21 Toshiba Kk Inspection device and inspection method
US9744642B2 (en) * 2013-10-29 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry feed system and method of providing slurry to chemical mechanical planarization station
CN103874312B (zh) * 2014-03-24 2016-06-29 西安交通大学 一种面向z箍缩的壳层等离子体柱产生方法及其装置
DE102014006063A1 (de) * 2014-04-25 2015-10-29 Microliquids GmbH Strahlerzeugungsvorrichtung und Verfahren zur Erzeugung eines Flüssigkeitsstrahls
KR102269695B1 (ko) 2015-03-19 2021-06-25 삼성전자주식회사 극자외선 광 생성 장치
CN107056271B (zh) * 2017-06-15 2020-02-04 内蒙古大学 一种GaFeO3陶瓷靶材及纳米薄膜的制备方法
CN111566563A (zh) * 2017-10-26 2020-08-21 Asml荷兰有限公司 用于监测等离子体的系统
US10631392B2 (en) * 2018-04-30 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. EUV collector contamination prevention
KR20210023535A (ko) * 2019-08-23 2021-03-04 삼성전자주식회사 타겟 잔해물 수집 장치 및 이를 포함하는 극자외선 광원 장치
CN111703899A (zh) * 2020-08-12 2020-09-25 江西铭德半导体科技有限公司 一种用于激光器芯片挑晶的治具

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Also Published As

Publication number Publication date
EP1775755B1 (en) 2012-09-26
US20080043213A1 (en) 2008-02-21
US7491955B2 (en) 2009-02-17
JP4337648B2 (ja) 2009-09-30
KR101174926B1 (ko) 2012-08-20
CN1973357A (zh) 2007-05-30
EP1775755A1 (en) 2007-04-18
EP2498275A2 (en) 2012-09-12
JP2006013033A (ja) 2006-01-12
KR20070019736A (ko) 2007-02-15
EP2498275A3 (en) 2012-12-05
EP2498275B1 (en) 2015-01-07
WO2006006408A1 (ja) 2006-01-19
CN1973357B (zh) 2011-04-20
EP1775755A4 (en) 2010-03-17

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230626