HK1168458A1 - Improvements to particle detectors - Google Patents
Improvements to particle detectorsInfo
- Publication number
- HK1168458A1 HK1168458A1 HK12109267.3A HK12109267A HK1168458A1 HK 1168458 A1 HK1168458 A1 HK 1168458A1 HK 12109267 A HK12109267 A HK 12109267A HK 1168458 A1 HK1168458 A1 HK 1168458A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- particle detectors
- detectors
- particle
- Prior art date
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
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- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B17/00—Fire alarms; Alarms responsive to explosion
- G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
- G08B17/103—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means using a light emitting and receiving device
- G08B17/107—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means using a light emitting and receiving device for detecting light-scattering due to smoke
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/14—Optical investigation techniques, e.g. flow cytometry
- G01N15/1434—Optical arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/14—Optical investigation techniques, e.g. flow cytometry
- G01N15/1456—Optical investigation techniques, e.g. flow cytometry without spatial resolution of the texture or inner structure of the particle, e.g. processing of pulse signals
- G01N15/1459—Optical investigation techniques, e.g. flow cytometry without spatial resolution of the texture or inner structure of the particle, e.g. processing of pulse signals the analysis being performed on a sample stream
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
- G01N21/53—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
- G01N21/53—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke
- G01N21/538—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke for determining atmospheric attenuation and visibility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/10—Investigating individual particles
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/062—LED's
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/062—LED's
- G01N2201/0621—Supply
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/062—LED's
- G01N2201/0627—Use of several LED's for spectral resolution
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0633—Directed, collimated illumination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/069—Supply of sources
- G01N2201/0696—Pulsed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Fire-Detection Mechanisms (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2009901926A AU2009901926A0 (en) | 2009-05-01 | Particle detector with auxiliary functions | |
AU2009901924A AU2009901924A0 (en) | 2009-05-01 | Partical detector; calibration; testing and commissioning techniques | |
AU2009901925A AU2009901925A0 (en) | 2009-05-01 | Particle detector, receiver techniques | |
AU2009901923A AU2009901923A0 (en) | 2009-05-01 | Partical detector, processor management and acquisition | |
AU2009901927A AU2009901927A0 (en) | 2009-05-01 | Partical detector; transmision techniques | |
AU2009901922A AU2009901922A0 (en) | 2009-05-01 | Particle detectors, polarisation; reflections; field of view techniques | |
PCT/AU2010/000511 WO2010124347A1 (en) | 2009-05-01 | 2010-05-03 | Improvements to particle detectors |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1168458A1 true HK1168458A1 (en) | 2012-12-28 |
Family
ID=43031595
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK12109267.3A HK1168458A1 (en) | 2009-05-01 | 2012-09-20 | Improvements to particle detectors |
HK16101570.8A HK1216115A1 (zh) | 2009-05-01 | 2016-02-12 | 微粒探測器的改進 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK16101570.8A HK1216115A1 (zh) | 2009-05-01 | 2016-02-12 | 微粒探測器的改進 |
Country Status (11)
Country | Link |
---|---|
US (5) | US8797531B2 (ko) |
EP (2) | EP3736558A1 (ko) |
JP (3) | JP5646600B2 (ko) |
KR (3) | KR101863270B1 (ko) |
CN (2) | CN104833655B (ko) |
AU (3) | AU2010242552B2 (ko) |
CA (2) | CA2993711C (ko) |
HK (2) | HK1168458A1 (ko) |
MY (1) | MY158884A (ko) |
TW (3) | TWI503530B (ko) |
WO (1) | WO2010124347A1 (ko) |
Families Citing this family (144)
Publication number | Priority date | Publication date | Assignee | Title |
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US7108414B2 (en) | 1995-06-27 | 2006-09-19 | Solid State Opto Limited | Light emitting panel assemblies |
AU2003902319A0 (en) | 2003-05-14 | 2003-05-29 | Garrett Thermal Systems Limited | Laser video detector |
WO2006050570A1 (en) * | 2004-11-12 | 2006-05-18 | Vfs Technologies Limited | Particle detector, system and method |
WO2009049272A2 (en) * | 2007-10-10 | 2009-04-16 | Gerard Dirk Smits | Image projector with reflected light tracking |
US9025144B2 (en) * | 2007-11-15 | 2015-05-05 | Xtralis Technologies Ltd. | Particle detection |
KR101851255B1 (ko) | 2008-06-10 | 2018-04-23 | 엑스트랄리스 테크놀로지 리미티드 | 입자 검출 |
EP2331938A4 (en) * | 2008-09-05 | 2017-05-17 | Xtralis Technologies Ltd | Optical detection of particle characteristics |
GB2464105A (en) * | 2008-10-01 | 2010-04-07 | Thorn Security | A Particle Detector |
CN104833655B (zh) | 2009-05-01 | 2018-10-16 | 爱克斯崔里斯科技有限公司 | 微粒探测器的改进 |
US8792602B2 (en) * | 2010-02-22 | 2014-07-29 | Analog Devices, Inc. | Mixed signal stochastic belief propagation |
GB201006680D0 (en) * | 2010-04-21 | 2010-06-09 | Fireangel Ltd | Alarm |
US20130100135A1 (en) * | 2010-07-01 | 2013-04-25 | Thomson Licensing | Method of estimating diffusion of light |
US8346500B2 (en) * | 2010-09-17 | 2013-01-01 | Chang Sung Ace Co., Ltd. | Self check-type flame detector |
EP2625845B1 (en) | 2010-10-04 | 2021-03-03 | Gerard Dirk Smits | System and method for 3-d projection and enhancements for interactivity |
JP5713862B2 (ja) * | 2011-09-29 | 2015-05-07 | 能美防災株式会社 | 光電式分離型煙感知器 |
JP6133545B2 (ja) * | 2012-03-30 | 2017-05-24 | 能美防災株式会社 | 光電式分離型感知器および光電式分離型感知器の光軸調整方法 |
US8907802B2 (en) | 2012-04-29 | 2014-12-09 | Valor Fire Safety, Llc | Smoke detector with external sampling volume and ambient light rejection |
US9915609B1 (en) | 2012-04-29 | 2018-03-13 | Valor Fire Safety, Llc | System and method of smoke detection using multiple wavelengths of light |
US8947243B2 (en) | 2012-04-29 | 2015-02-03 | Valor Fire Safety, Llc | Smoke detector with external sampling volume and utilizing internally reflected light |
US9835549B1 (en) * | 2012-04-29 | 2017-12-05 | Valor Fire Safety, Llc | System and method of smoke detection using multiple wavelengths of light and multiple sensors |
US9140646B2 (en) | 2012-04-29 | 2015-09-22 | Valor Fire Safety, Llc | Smoke detector with external sampling volume using two different wavelengths and ambient light detection for measurement correction |
US9396637B2 (en) * | 2012-07-13 | 2016-07-19 | Walter Kidde Portable Equipment, Inc | Photoelectric smoke detector with drift compensation |
DE102012014520A1 (de) * | 2012-07-23 | 2014-01-23 | Prüftechnik Dieter Busch AG | Vorrichtung zum Ermitteln der Lage von mechanischen Elementen |
JP5993253B2 (ja) * | 2012-09-06 | 2016-09-14 | 能美防災株式会社 | 煙感知器 |
US8711370B1 (en) | 2012-10-04 | 2014-04-29 | Gerard Dirk Smits | Scanning optical positioning system with spatially triangulating receivers |
US8971568B1 (en) | 2012-10-08 | 2015-03-03 | Gerard Dirk Smits | Method, apparatus, and manufacture for document writing and annotation with virtual ink |
JP6396324B2 (ja) * | 2013-01-04 | 2018-09-26 | ユニバーシティ オブ リメリック | 差動赤外線ナノ顕微鏡法システムおよび方法 |
US10352844B2 (en) | 2013-03-15 | 2019-07-16 | Particles Plus, Inc. | Multiple particle sensors in a particle counter |
US9677990B2 (en) | 2014-04-30 | 2017-06-13 | Particles Plus, Inc. | Particle counter with advanced features |
US11579072B2 (en) | 2013-03-15 | 2023-02-14 | Particles Plus, Inc. | Personal air quality monitoring system |
KR101373864B1 (ko) * | 2013-07-02 | 2014-03-12 | 이승철 | 고압반, 저압반, 모터콘트롤반, 분전반 배전반의 전기화재 조기 감지장치 |
DE102013220553A1 (de) * | 2013-10-11 | 2015-04-16 | Robert Bosch Gmbh | Raucherkennungsvorrichtung, Verfahren zur Detektion von mindestens einem Rauchdetektionsmerkmal sowie Computerprogramm |
US9819933B2 (en) * | 2013-10-18 | 2017-11-14 | Alcatel Lucent | Automated testing of media devices |
CA2927785C (en) | 2013-10-30 | 2024-04-16 | Valor Fire Safety, Llc | Smoke detector with external sampling volume and ambient light rejection |
WO2015063299A1 (en) | 2013-11-01 | 2015-05-07 | Tomra Sorting Nv | Method and apparatus for detecting matter |
US9300388B1 (en) | 2013-12-18 | 2016-03-29 | Google Inc. | Systems and methods for using different beam widths for communications between balloons |
DE102014001704B4 (de) * | 2014-02-08 | 2023-08-10 | Dräger Safety AG & Co. KGaA | Gasdetektionsvorrichtung |
CN106104297B (zh) | 2014-03-14 | 2020-06-30 | 赫普塔冈微光有限公司 | 可操作以识别虚假反射并补偿由虚假反射导致的误差的光电模块 |
WO2015149027A1 (en) | 2014-03-28 | 2015-10-01 | Gerard Dirk Smits | Smart head-mounted projection system |
JP6536567B2 (ja) * | 2014-03-28 | 2019-07-03 | 日本電気株式会社 | 検知装置、検知方法、及びコンピュータプログラム |
US9830806B2 (en) * | 2014-06-02 | 2017-11-28 | Tyco New Zealand Limited | Systems enabling testing of fire control panels together with remote control and providing text-to-speech of event data |
EP2983145A1 (de) * | 2014-08-05 | 2016-02-10 | Siemens Schweiz AG | Meldersockel und Anschlussbasis zur lösbaren Anbringung eines Gefahrenmelders mit jeweils einer Funkeinrichtung zum Aussenden von Positionsdaten des Montageorts des Meldersockels bzw. der Anschlussbasis und/oder eines Verweises auf diese Positionsdaten |
WO2016025502A1 (en) | 2014-08-11 | 2016-02-18 | Gerard Dirk Smits | Three-dimensional triangulation and time-of-flight based tracking systems and methods |
JP2016080571A (ja) * | 2014-10-20 | 2016-05-16 | 株式会社島津製作所 | 粒子量測定装置 |
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