CN102460527B - 微粒探测器的改进 - Google Patents
微粒探测器的改进 Download PDFInfo
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- CN102460527B CN102460527B CN201080030294.2A CN201080030294A CN102460527B CN 102460527 B CN102460527 B CN 102460527B CN 201080030294 A CN201080030294 A CN 201080030294A CN 102460527 B CN102460527 B CN 102460527B
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
Abstract
Description
Claims (20)
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AU2009901925A AU2009901925A0 (en) | 2009-05-01 | Particle detector, receiver techniques | |
AU2009901923 | 2009-05-01 | ||
AU2009901922 | 2009-05-01 | ||
AU2009901926A AU2009901926A0 (en) | 2009-05-01 | Particle detector with auxiliary functions | |
AU2009901925 | 2009-05-01 | ||
AU2009901926 | 2009-05-01 | ||
AU2009901927A AU2009901927A0 (en) | 2009-05-01 | Partical detector; transmision techniques | |
AU2009901923A AU2009901923A0 (en) | 2009-05-01 | Partical detector, processor management and acquisition | |
AU2009901924A AU2009901924A0 (en) | 2009-05-01 | Partical detector; calibration; testing and commissioning techniques | |
AU2009901922A AU2009901922A0 (en) | 2009-05-01 | Particle detectors, polarisation; reflections; field of view techniques | |
AU2009901927 | 2009-05-01 | ||
PCT/AU2010/000511 WO2010124347A1 (en) | 2009-05-01 | 2010-05-03 | Improvements to particle detectors |
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