HK1162746A1 - 電子器件及其製造方法 - Google Patents

電子器件及其製造方法

Info

Publication number
HK1162746A1
HK1162746A1 HK12102996.6A HK12102996A HK1162746A1 HK 1162746 A1 HK1162746 A1 HK 1162746A1 HK 12102996 A HK12102996 A HK 12102996A HK 1162746 A1 HK1162746 A1 HK 1162746A1
Authority
HK
Hong Kong
Prior art keywords
manufacturing
electronic device
method therefor
therefor
electronic
Prior art date
Application number
HK12102996.6A
Other languages
English (en)
Inventor
關根重信
關根由莉奈
桑名良治
Original Assignee
納普拉有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 納普拉有限公司 filed Critical 納普拉有限公司
Publication of HK1162746A1 publication Critical patent/HK1162746A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16146Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Led Device Packages (AREA)
HK12102996.6A 2010-05-21 2012-03-27 電子器件及其製造方法 HK1162746A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010117008 2010-05-21
JP2011056556A JP5209075B2 (ja) 2010-05-21 2011-03-15 電子デバイス及びその製造方法

Publications (1)

Publication Number Publication Date
HK1162746A1 true HK1162746A1 (zh) 2012-08-31

Family

ID=44483965

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12102996.6A HK1162746A1 (zh) 2010-05-21 2012-03-27 電子器件及其製造方法

Country Status (7)

Country Link
US (1) US9685394B2 (zh)
EP (1) EP2388814B1 (zh)
JP (1) JP5209075B2 (zh)
KR (1) KR101368524B1 (zh)
CN (1) CN102254896B (zh)
HK (1) HK1162746A1 (zh)
TW (1) TWI422003B (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9675443B2 (en) 2009-09-10 2017-06-13 Johnson & Johnson Vision Care, Inc. Energized ophthalmic lens including stacked integrated components
US8950862B2 (en) 2011-02-28 2015-02-10 Johnson & Johnson Vision Care, Inc. Methods and apparatus for an ophthalmic lens with functional insert layers
JP5958732B2 (ja) * 2011-03-11 2016-08-02 ソニー株式会社 半導体装置、製造方法、および電子機器
US9698129B2 (en) 2011-03-18 2017-07-04 Johnson & Johnson Vision Care, Inc. Stacked integrated component devices with energization
US10451897B2 (en) 2011-03-18 2019-10-22 Johnson & Johnson Vision Care, Inc. Components with multiple energization elements for biomedical devices
US9233513B2 (en) 2011-03-18 2016-01-12 Johnson & Johnson Vision Care, Inc. Apparatus for manufacturing stacked integrated component media inserts for ophthalmic devices
US9804418B2 (en) 2011-03-21 2017-10-31 Johnson & Johnson Vision Care, Inc. Methods and apparatus for functional insert with power layer
JP5225479B2 (ja) * 2011-09-27 2013-07-03 有限会社 ナプラ 半導体基板、電子デバイス及びその製造方法
US8857983B2 (en) 2012-01-26 2014-10-14 Johnson & Johnson Vision Care, Inc. Ophthalmic lens assembly having an integrated antenna structure
JP5124693B1 (ja) * 2012-04-24 2013-01-23 有限会社 ナプラ 電子機器
US9113555B2 (en) * 2012-12-21 2015-08-18 Intel Corporation Apparatus for differential far-end crosstalk reduction
JP5575309B1 (ja) 2013-08-05 2014-08-20 有限会社 ナプラ 集積回路装置
US9184143B2 (en) * 2013-12-05 2015-11-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with bump adjustment and manufacturing method thereof
US9263405B2 (en) * 2013-12-05 2016-02-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
US9715130B2 (en) 2014-08-21 2017-07-25 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form separators for biocompatible energization elements for biomedical devices
US9383593B2 (en) 2014-08-21 2016-07-05 Johnson & Johnson Vision Care, Inc. Methods to form biocompatible energization elements for biomedical devices comprising laminates and placed separators
US9793536B2 (en) 2014-08-21 2017-10-17 Johnson & Johnson Vision Care, Inc. Pellet form cathode for use in a biocompatible battery
US10361405B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes
US9599842B2 (en) 2014-08-21 2017-03-21 Johnson & Johnson Vision Care, Inc. Device and methods for sealing and encapsulation for biocompatible energization elements
US10361404B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Anodes for use in biocompatible energization elements
US10627651B2 (en) 2014-08-21 2020-04-21 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization primary elements for biomedical devices with electroless sealing layers
US9941547B2 (en) 2014-08-21 2018-04-10 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes and cavity structures
US10381687B2 (en) 2014-08-21 2019-08-13 Johnson & Johnson Vision Care, Inc. Methods of forming biocompatible rechargable energization elements for biomedical devices
WO2016035625A1 (ja) 2014-09-03 2016-03-10 国立大学法人東北大学 半導体装置およびその製造方法
US10345620B2 (en) 2016-02-18 2019-07-09 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization elements incorporating fuel cells for biomedical devices
US10490483B2 (en) 2016-03-07 2019-11-26 Micron Technology, Inc. Low capacitance through substrate via structures
DE102017215531A1 (de) * 2017-09-05 2019-03-07 Robert Bosch Gmbh Verfahren zum Verschließen einer mikromechanischen Vorrichtung mittels Laser-Schmelzen und mikromechanische Vorrichtung mit einem Laser-Schmelz-Verschluss
JP2019056581A (ja) 2017-09-20 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 電荷検出センサおよび電位計測システム
JP2021068737A (ja) * 2019-10-17 2021-04-30 本田技研工業株式会社 半導体装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259299A (ja) * 1992-03-16 1993-10-08 Fujitsu Ltd 半導体装置の製造方法
JPH0697298A (ja) * 1992-09-14 1994-04-08 Fujitsu Ltd 半導体装置の絶縁膜の形成方法
JPH10215044A (ja) * 1997-01-28 1998-08-11 Kyocera Corp 配線基板及びその製造方法
CN1187800C (zh) 1997-04-03 2005-02-02 株式会社山武 电路板以及检测器及其制造方法
JP2883328B2 (ja) * 1997-05-27 1999-04-19 株式会社オハラ 磁気ヘッド浮上量測定用模擬ディスク
US6376049B1 (en) * 1997-10-14 2002-04-23 Ibiden Co., Ltd. Multilayer printed wiring board and its manufacturing method, and resin composition for filling through-hole
JP2000311982A (ja) * 1999-04-26 2000-11-07 Toshiba Corp 半導体装置と半導体モジュールおよびそれらの製造方法
JP3951091B2 (ja) * 2000-08-04 2007-08-01 セイコーエプソン株式会社 半導体装置の製造方法
JP4095763B2 (ja) * 2000-09-06 2008-06-04 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6985746B2 (en) 2001-04-30 2006-01-10 Ipr Licensing, Inc. Wireless communication system having mobility-based content delivery
US20030038344A1 (en) 2001-08-24 2003-02-27 Mcnc Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
JP2004095849A (ja) 2002-08-30 2004-03-25 Fujikura Ltd 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法
EP2704187B1 (en) 2003-04-03 2015-08-19 Imec METHOD FOR PRODUCING ELECTRICAL THROUGH HOLE INTERCONNECTS AND corresponding DEVICE
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US7866038B2 (en) 2004-07-06 2011-01-11 Tokyo Electron Limited Through substrate, interposer and manufacturing method of through substrate
JP2006024653A (ja) 2004-07-06 2006-01-26 Tokyo Electron Ltd 貫通基板および貫通基板の製造方法
JP2006049557A (ja) * 2004-08-04 2006-02-16 Seiko Epson Corp 半導体装置
JP2006156486A (ja) * 2004-11-25 2006-06-15 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP4795677B2 (ja) * 2004-12-02 2011-10-19 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体モジュール、ならびに半導体装置の製造方法
AU2005314077B2 (en) * 2004-12-07 2010-08-05 Multi-Fineline Electronix, Inc. Miniature circuitry and inductive components and methods for manufacturing same
TWI420686B (zh) * 2004-12-10 2013-12-21 Panasonic Corp 半導體發光裝置、發光模組及照明裝置
US7772115B2 (en) 2005-09-01 2010-08-10 Micron Technology, Inc. Methods for forming through-wafer interconnects, intermediate structures so formed, and devices and systems having at least one solder dam structure
DE102006035864B4 (de) 2006-08-01 2014-03-27 Qimonda Ag Verfahren zur Herstellung einer elektrischen Durchkontaktierung
JP5563186B2 (ja) 2007-03-30 2014-07-30 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
JP4386458B2 (ja) 2008-05-15 2009-12-16 有限会社ナプラ 回路基板、電子デバイス及びそれらの製造方法
US7910837B2 (en) * 2007-08-10 2011-03-22 Napra Co., Ltd. Circuit board, electronic device and method for manufacturing the same
JP4833192B2 (ja) * 2007-12-27 2011-12-07 新光電気工業株式会社 電子装置
US7939449B2 (en) * 2008-06-03 2011-05-10 Micron Technology, Inc. Methods of forming hybrid conductive vias including small dimension active surface ends and larger dimension back side ends
KR20100021856A (ko) * 2008-08-18 2010-02-26 삼성전자주식회사 관통 전극을 갖는 반도체장치의 형성방법 및 관련된 장치
JP4278007B1 (ja) * 2008-11-26 2009-06-10 有限会社ナプラ 微細空間への金属充填方法
JP2010205941A (ja) 2009-03-03 2010-09-16 Panasonic Corp 半導体チップ及び半導体装置
JP4505540B1 (ja) * 2009-06-02 2010-07-21 有限会社ナプラ 金属充填装置
US8415784B2 (en) 2009-06-02 2013-04-09 Napra Co., Ltd. Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method

Also Published As

Publication number Publication date
EP2388814A3 (en) 2014-04-23
CN102254896B (zh) 2014-12-31
EP2388814A2 (en) 2011-11-23
CN102254896A (zh) 2011-11-23
TW201214646A (en) 2012-04-01
US20110284912A1 (en) 2011-11-24
JP5209075B2 (ja) 2013-06-12
KR20110128247A (ko) 2011-11-29
TWI422003B (zh) 2014-01-01
JP2012009820A (ja) 2012-01-12
KR101368524B1 (ko) 2014-02-27
US9685394B2 (en) 2017-06-20
EP2388814B1 (en) 2017-10-18

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20220520