HK1135796A1 - Memory arrays using nanotube articles with reprogrammable resistance - Google Patents

Memory arrays using nanotube articles with reprogrammable resistance

Info

Publication number
HK1135796A1
HK1135796A1 HK10100379.9A HK10100379A HK1135796A1 HK 1135796 A1 HK1135796 A1 HK 1135796A1 HK 10100379 A HK10100379 A HK 10100379A HK 1135796 A1 HK1135796 A1 HK 1135796A1
Authority
HK
Hong Kong
Prior art keywords
memory arrays
nanotube articles
reprogrammable resistance
reprogrammable
resistance
Prior art date
Application number
HK10100379.9A
Other languages
English (en)
Inventor
Claude L Bertin
Frank Guo
Thomas Rueckes
Steven L Konsek
Mitchell Meinhold
Max Strasburg
Ramesh Sivarajan
X M Henry Huang
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Publication of HK1135796A1 publication Critical patent/HK1135796A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
HK10100379.9A 2005-05-09 2010-01-13 Memory arrays using nanotube articles with reprogrammable resistance HK1135796A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US67902905P 2005-05-09 2005-05-09
US69289105P 2005-06-22 2005-06-22
US69276505P 2005-06-22 2005-06-22
US69291805P 2005-06-22 2005-06-22
US11/274,967 US7479654B2 (en) 2005-05-09 2005-11-15 Memory arrays using nanotube articles with reprogrammable resistance
PCT/US2006/017902 WO2006122111A2 (fr) 2005-05-09 2006-05-09 Reseaux de memoire a articles en nanotubes avec resistance reprogrammable

Publications (1)

Publication Number Publication Date
HK1135796A1 true HK1135796A1 (en) 2010-06-11

Family

ID=37393886

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10100379.9A HK1135796A1 (en) 2005-05-09 2010-01-13 Memory arrays using nanotube articles with reprogrammable resistance

Country Status (8)

Country Link
US (2) US7479654B2 (fr)
EP (1) EP1889260A4 (fr)
JP (1) JP5701481B2 (fr)
CN (1) CN102280139B (fr)
CA (1) CA2608106C (fr)
HK (1) HK1135796A1 (fr)
TW (1) TWI328227B (fr)
WO (1) WO2006122111A2 (fr)

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CN102280139B (zh) 2014-09-24
US20090154218A1 (en) 2009-06-18
US8580586B2 (en) 2013-11-12
US20060250856A1 (en) 2006-11-09
WO2006122111A3 (fr) 2008-11-06
CN102280139A (zh) 2011-12-14
JP5701481B2 (ja) 2015-04-15
EP1889260A4 (fr) 2009-12-09
WO2006122111A2 (fr) 2006-11-16
EP1889260A2 (fr) 2008-02-20
CA2608106C (fr) 2016-03-29
TWI328227B (en) 2010-08-01
TW200643953A (en) 2006-12-16
CA2608106A1 (fr) 2006-11-16
JP2008541458A (ja) 2008-11-20
US7479654B2 (en) 2009-01-20

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