HK1133030A1 - Etching paste containing particles for silicon surfaces and layers - Google Patents
Etching paste containing particles for silicon surfaces and layersInfo
- Publication number
- HK1133030A1 HK1133030A1 HK09110459.4A HK09110459A HK1133030A1 HK 1133030 A1 HK1133030 A1 HK 1133030A1 HK 09110459 A HK09110459 A HK 09110459A HK 1133030 A1 HK1133030 A1 HK 1133030A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- layers
- containing particles
- paste containing
- silicon surfaces
- etching paste
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1481—Pastes, optionally in the form of blocks or sticks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Surface Treatment Of Glass (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006051952A DE102006051952A1 (de) | 2006-11-01 | 2006-11-01 | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
PCT/EP2007/008662 WO2008052636A1 (de) | 2006-11-01 | 2007-10-05 | Partikelhaltige ätzpasten für siliziumoberflächen und -schichten |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1133030A1 true HK1133030A1 (en) | 2010-03-12 |
Family
ID=38926215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09110459.4A HK1133030A1 (en) | 2006-11-01 | 2009-11-10 | Etching paste containing particles for silicon surfaces and layers |
Country Status (11)
Country | Link |
---|---|
US (1) | US20100068889A1 (ja) |
EP (1) | EP2099877B1 (ja) |
JP (1) | JP5033193B2 (ja) |
KR (1) | KR101473502B1 (ja) |
CN (1) | CN101528884B (ja) |
DE (1) | DE102006051952A1 (ja) |
ES (1) | ES2531087T3 (ja) |
HK (1) | HK1133030A1 (ja) |
MY (1) | MY149145A (ja) |
TW (1) | TWI425078B (ja) |
WO (1) | WO2008052636A1 (ja) |
Families Citing this family (51)
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DE102006051735A1 (de) * | 2006-10-30 | 2008-05-08 | Merck Patent Gmbh | Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten |
WO2009040794A1 (en) * | 2007-09-24 | 2009-04-02 | Dip Tech. Ltd. | Etching compositions, methods and printing components |
US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
TW200939510A (en) * | 2007-11-19 | 2009-09-16 | Applied Materials Inc | Solar cell contact formation process using a patterned etchant material |
DE102007058829A1 (de) * | 2007-12-06 | 2009-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung |
EP2345091B1 (de) * | 2008-09-01 | 2015-12-16 | Merck Patent GmbH | Randentschichtung von dünnschichtsolarmodulen mittels ätzen |
DE102008056086A1 (de) * | 2008-11-06 | 2010-05-12 | Gp Solar Gmbh | Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen sowie Verfahren zu dessen Herstellung |
US20100130014A1 (en) * | 2008-11-26 | 2010-05-27 | Palo Alto Research Center Incorporated | Texturing multicrystalline silicon |
DE102009012827A1 (de) * | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
CN101958361A (zh) * | 2009-07-13 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | 透光薄膜太阳电池组件刻蚀方法 |
DE102009028762A1 (de) | 2009-08-20 | 2011-03-03 | Rena Gmbh | Verfahren zum Ätzen von Siliziumoberflächen |
US7955989B2 (en) * | 2009-09-24 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Texturing semiconductor substrates |
JP5628931B2 (ja) * | 2009-10-30 | 2014-11-19 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 選択エミッタを含む、ソーラーセルの製造方法 |
KR101383395B1 (ko) * | 2009-12-28 | 2014-04-09 | 현대중공업 주식회사 | 후면전극형 태양전지의 제조방법 |
DE102010004743A1 (de) * | 2010-01-14 | 2011-07-21 | Merck Patent GmbH, 64293 | Laseradditiv |
CN101777605A (zh) * | 2010-03-15 | 2010-07-14 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池边缘刻蚀工艺 |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
DE102010019079A1 (de) * | 2010-04-30 | 2011-11-03 | Gp Solar Gmbh | Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen, sowie Verfahren zu dessen Herstellung |
SG185550A1 (en) * | 2010-05-21 | 2012-12-28 | Merck Patent Gmbh | Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure |
CN101864569B (zh) * | 2010-05-31 | 2013-01-09 | 江西赛维Ldk太阳能高科技有限公司 | 一种制作太阳能电池片的刻蚀装置以及方法 |
WO2011157335A1 (en) * | 2010-06-14 | 2011-12-22 | Merck Patent Gmbh | Cross-linking and multi-phase etch pastes for high resolution feature patterning |
WO2011158118A2 (en) * | 2010-06-14 | 2011-12-22 | Indian Institute Of Technology | Method and device for forming an electrical contact pattern on a solar cell |
WO2012023613A1 (ja) * | 2010-08-20 | 2012-02-23 | 株式会社トクヤマ | テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット |
US20140021400A1 (en) * | 2010-12-15 | 2014-01-23 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
EP2702451B1 (en) * | 2011-04-28 | 2015-04-22 | Merck Patent GmbH | Selectively etching of a polymer matrix on pet |
KR20140058563A (ko) * | 2011-07-18 | 2014-05-14 | 메르크 파텐트 게엠베하 | 대전방지 및 반사방지 코팅들 그리고 대응하는 적층된 층들의 구조화 |
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EP2587564A1 (en) * | 2011-10-27 | 2013-05-01 | Merck Patent GmbH | Selective etching of a matrix comprising silver nanowires or carbon nanotubes |
CN102623568B (zh) * | 2012-04-10 | 2014-08-06 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳电池扩散死层的去除方法 |
KR102078293B1 (ko) | 2012-05-10 | 2020-02-17 | 코닝 인코포레이티드 | 유리 에칭 매질 및 방법 |
CN104396027A (zh) * | 2012-06-25 | 2015-03-04 | 默克专利股份有限公司 | 制造具有局部背表面场(lbsf)的太阳能电池的方法 |
JP6081218B2 (ja) * | 2013-02-20 | 2017-02-15 | 新日鉄住金マテリアルズ株式会社 | エッチング装置およびエッチング方法 |
TWI488943B (zh) * | 2013-04-29 | 2015-06-21 | Chi Mei Corp | 蝕刻膏組成物及其應用 |
CN103500772B (zh) * | 2013-09-06 | 2016-06-15 | 江苏爱多光伏科技有限公司 | 浆料腐蚀法制备背面抛光多晶硅太阳电池的工艺方法 |
CN103508677A (zh) * | 2013-09-24 | 2014-01-15 | 苏州诺维克光伏新材料有限公司 | 一种膏体材料及其应用 |
US9059341B1 (en) * | 2014-01-23 | 2015-06-16 | E I Du Pont De Nemours And Company | Method for manufacturing an interdigitated back contact solar cell |
JP2015173184A (ja) * | 2014-03-11 | 2015-10-01 | 東京応化工業株式会社 | アルカリエッチングマスク剤組成物、及びエッチング方法 |
CN105236756A (zh) * | 2015-09-21 | 2016-01-13 | 海南大学 | 减反射玻璃及其制备方法 |
CN106800040B (zh) * | 2017-02-24 | 2022-10-21 | 南京航空航天大学 | 一种汽车电控复合转向系统及其多目标优化方法 |
CN109835867B (zh) * | 2017-11-24 | 2023-07-14 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀溶液和刻蚀方法 |
CN108004598A (zh) * | 2017-12-01 | 2018-05-08 | 绍兴拓邦电子科技有限公司 | 一种晶体硅边缘刻蚀添加剂及其使用方法 |
EP3761766A1 (en) * | 2019-07-03 | 2021-01-06 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Anisotropic etching using additives |
CN111559863B (zh) * | 2020-05-12 | 2022-04-19 | 江苏华鸥玻璃有限公司 | 一种耐热耐腐蚀的高硼硅棕色玻璃及其制备方法 |
TWI751568B (zh) * | 2020-05-29 | 2022-01-01 | 新應材股份有限公司 | 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程 |
CN113736466B (zh) * | 2020-05-29 | 2023-05-12 | 新应材股份有限公司 | 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺 |
CN111952409B (zh) * | 2020-06-30 | 2022-04-19 | 泰州中来光电科技有限公司 | 一种具有选择性发射极结构的钝化接触电池的制备方法 |
EP3984970A1 (en) * | 2020-10-14 | 2022-04-20 | Schott Ag | Method for processing glass by alkaline etching |
JP2022148455A (ja) * | 2021-03-24 | 2022-10-06 | 株式会社Screenホールディングス | 基板処理方法、および、基板処理装置 |
KR20220136540A (ko) * | 2021-03-30 | 2022-10-11 | 삼성디스플레이 주식회사 | 표시 장치, 윈도우 제조 방법, 및 표시 장치 제조 방법 |
CN113488385B (zh) * | 2021-05-21 | 2022-10-28 | 刘军 | 一种导电膜气离式刻蚀工艺 |
CN115011348B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种氮化铝蚀刻液及其应用 |
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DE3031567A1 (de) * | 1980-08-21 | 1982-04-29 | Elochem Ätztechnik GmbH, 7758 Meersburg | Verfahren zum regenerieren einer ammoniakalischen aetzloesung |
US5500188A (en) * | 1984-03-01 | 1996-03-19 | Molecular Devices Corporation | Device for photoresponsive detection and discrimination |
US5688366A (en) * | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
JP3173318B2 (ja) * | 1994-04-28 | 2001-06-04 | キヤノン株式会社 | エッチング方法及び半導体素子の製造方法 |
MXPA02010634A (es) * | 2000-04-28 | 2003-03-10 | Merck Patent Gmbh | Pastas mordientes para superficies inorganicas. |
GB0108199D0 (en) * | 2001-04-02 | 2001-05-23 | Dupont Teijin Films Us Ltd | Multilayer film |
EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
DE602004022475D1 (de) * | 2003-05-08 | 2009-09-17 | Samsung Mobile Display Co Ltd | Verfahren zur Herstellung eines Substrats für organische elektrolumineszente Vorrichtungen |
US7612368B2 (en) * | 2004-12-29 | 2009-11-03 | E.I. Du Pont De Nemours And Company | Organic bottom emission electronic device |
DE102005007743A1 (de) * | 2005-01-11 | 2006-07-20 | Merck Patent Gmbh | Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten |
-
2006
- 2006-11-01 DE DE102006051952A patent/DE102006051952A1/de not_active Withdrawn
-
2007
- 2007-10-05 EP EP07818738.2A patent/EP2099877B1/de not_active Not-in-force
- 2007-10-05 JP JP2009534998A patent/JP5033193B2/ja not_active Expired - Fee Related
- 2007-10-05 MY MYPI20091713A patent/MY149145A/en unknown
- 2007-10-05 ES ES07818738T patent/ES2531087T3/es active Active
- 2007-10-05 CN CN200780040165XA patent/CN101528884B/zh not_active Expired - Fee Related
- 2007-10-05 WO PCT/EP2007/008662 patent/WO2008052636A1/de active Application Filing
- 2007-10-05 US US12/447,921 patent/US20100068889A1/en not_active Abandoned
- 2007-10-05 KR KR1020097011083A patent/KR101473502B1/ko not_active IP Right Cessation
- 2007-10-29 TW TW096140603A patent/TWI425078B/zh not_active IP Right Cessation
-
2009
- 2009-11-10 HK HK09110459.4A patent/HK1133030A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP5033193B2 (ja) | 2012-09-26 |
CN101528884B (zh) | 2013-09-25 |
KR20090091733A (ko) | 2009-08-28 |
ES2531087T3 (es) | 2015-03-10 |
EP2099877A1 (de) | 2009-09-16 |
US20100068889A1 (en) | 2010-03-18 |
EP2099877B1 (de) | 2014-11-26 |
MY149145A (en) | 2013-07-15 |
KR101473502B1 (ko) | 2014-12-16 |
CN101528884A (zh) | 2009-09-09 |
TW200835778A (en) | 2008-09-01 |
WO2008052636A1 (de) | 2008-05-08 |
DE102006051952A1 (de) | 2008-05-08 |
JP2010508663A (ja) | 2010-03-18 |
TWI425078B (zh) | 2014-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20171005 |