HK1133030A1 - Etching paste containing particles for silicon surfaces and layers - Google Patents

Etching paste containing particles for silicon surfaces and layers

Info

Publication number
HK1133030A1
HK1133030A1 HK09110459.4A HK09110459A HK1133030A1 HK 1133030 A1 HK1133030 A1 HK 1133030A1 HK 09110459 A HK09110459 A HK 09110459A HK 1133030 A1 HK1133030 A1 HK 1133030A1
Authority
HK
Hong Kong
Prior art keywords
layers
containing particles
paste containing
silicon surfaces
etching paste
Prior art date
Application number
HK09110459.4A
Other languages
English (en)
Inventor
Werner Stockum
Sylke Klein
Armin Kuebelbeck
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of HK1133030A1 publication Critical patent/HK1133030A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1481—Pastes, optionally in the form of blocks or sticks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
HK09110459.4A 2006-11-01 2009-11-10 Etching paste containing particles for silicon surfaces and layers HK1133030A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006051952A DE102006051952A1 (de) 2006-11-01 2006-11-01 Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
PCT/EP2007/008662 WO2008052636A1 (de) 2006-11-01 2007-10-05 Partikelhaltige ätzpasten für siliziumoberflächen und -schichten

Publications (1)

Publication Number Publication Date
HK1133030A1 true HK1133030A1 (en) 2010-03-12

Family

ID=38926215

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09110459.4A HK1133030A1 (en) 2006-11-01 2009-11-10 Etching paste containing particles for silicon surfaces and layers

Country Status (11)

Country Link
US (1) US20100068889A1 (xx)
EP (1) EP2099877B1 (xx)
JP (1) JP5033193B2 (xx)
KR (1) KR101473502B1 (xx)
CN (1) CN101528884B (xx)
DE (1) DE102006051952A1 (xx)
ES (1) ES2531087T3 (xx)
HK (1) HK1133030A1 (xx)
MY (1) MY149145A (xx)
TW (1) TWI425078B (xx)
WO (1) WO2008052636A1 (xx)

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DE102010019079A1 (de) * 2010-04-30 2011-11-03 Gp Solar Gmbh Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen, sowie Verfahren zu dessen Herstellung
ES2535873T3 (es) * 2010-05-21 2015-05-18 Merck Patent Gmbh Grabado químico selectivo de una matriz polimérica de nanotubos de carbono (NTC) sobre una subestructura plástica
CN101864569B (zh) * 2010-05-31 2013-01-09 江西赛维Ldk太阳能高科技有限公司 一种制作太阳能电池片的刻蚀装置以及方法
WO2011158118A2 (en) * 2010-06-14 2011-12-22 Indian Institute Of Technology Method and device for forming an electrical contact pattern on a solar cell
WO2011157335A1 (en) * 2010-06-14 2011-12-22 Merck Patent Gmbh Cross-linking and multi-phase etch pastes for high resolution feature patterning
TW201221626A (en) * 2010-08-20 2012-06-01 Tokuyama Corp Composition for texture formation, kit for preparation thereof, and method for manufacturing silicon substrates
WO2012083082A1 (en) 2010-12-15 2012-06-21 Sun Chemical Corporation Printable etchant compositions for etching silver nanoware-based transparent, conductive film
EP2702451B1 (en) * 2011-04-28 2015-04-22 Merck Patent GmbH Selectively etching of a polymer matrix on pet
EP2735216A1 (de) * 2011-07-18 2014-05-28 Merck Patent GmbH Strukturierung von antistatischen und antireflektionsbeschichtungen und von entsprechenden stapelschichten
CN102432185B (zh) * 2011-09-30 2014-09-10 郑州恒昊玻璃技术有限公司 一种防眩玻璃制品蚀刻液及蚀刻工艺
EP2587564A1 (en) * 2011-10-27 2013-05-01 Merck Patent GmbH Selective etching of a matrix comprising silver nanowires or carbon nanotubes
CN102623568B (zh) * 2012-04-10 2014-08-06 苏州阿特斯阳光电力科技有限公司 一种晶体硅太阳电池扩散死层的去除方法
JP6325528B2 (ja) 2012-05-10 2018-05-16 コーニング インコーポレイテッド ガラスエッチング媒体及び方法
JP2015522951A (ja) * 2012-06-25 2015-08-06 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 局所背面電界（ｌｂｓｆ）を有する太陽電池の製造方法
JP6081218B2 (ja) * 2013-02-20 2017-02-15 新日鉄住金マテリアルズ株式会社 エッチング装置およびエッチング方法
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
CN103500772B (zh) * 2013-09-06 2016-06-15 江苏爱多光伏科技有限公司 浆料腐蚀法制备背面抛光多晶硅太阳电池的工艺方法
CN103508677A (zh) * 2013-09-24 2014-01-15 苏州诺维克光伏新材料有限公司 一种膏体材料及其应用
US9059341B1 (en) * 2014-01-23 2015-06-16 E I Du Pont De Nemours And Company Method for manufacturing an interdigitated back contact solar cell
JP2015173184A (ja) * 2014-03-11 2015-10-01 東京応化工業株式会社 アルカリエッチングマスク剤組成物、及びエッチング方法
CN105236756A (zh) * 2015-09-21 2016-01-13 海南大学 减反射玻璃及其制备方法
CN106800040B (zh) * 2017-02-24 2022-10-21 南京航空航天大学 一种汽车电控复合转向系统及其多目标优化方法
CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN108004598A (zh) * 2017-12-01 2018-05-08 绍兴拓邦电子科技有限公司 一种晶体硅边缘刻蚀添加剂及其使用方法
EP3761766A1 (en) * 2019-07-03 2021-01-06 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Anisotropic etching using additives
CN111559863B (zh) * 2020-05-12 2022-04-19 江苏华鸥玻璃有限公司 一种耐热耐腐蚀的高硼硅棕色玻璃及其制备方法
TWI751568B (zh) * 2020-05-29 2022-01-01 新應材股份有限公司 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺
CN111952409B (zh) * 2020-06-30 2022-04-19 泰州中来光电科技有限公司 一种具有选择性发射极结构的钝化接触电池的制备方法
EP3984970A1 (en) 2020-10-14 2022-04-20 Schott Ag Method for processing glass by alkaline etching
JP2022148455A (ja) * 2021-03-24 2022-10-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
KR20220136540A (ko) * 2021-03-30 2022-10-11 삼성디스플레이 주식회사 표시 장치, 윈도우 제조 방법, 및 표시 장치 제조 방법
CN113488385B (zh) * 2021-05-21 2022-10-28 刘军 一种导电膜气离式刻蚀工艺
CN115011348B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝蚀刻液及其应用

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Also Published As

Publication number Publication date
ES2531087T3 (es) 2015-03-10
KR101473502B1 (ko) 2014-12-16
EP2099877B1 (de) 2014-11-26
CN101528884B (zh) 2013-09-25
DE102006051952A1 (de) 2008-05-08
EP2099877A1 (de) 2009-09-16
TWI425078B (zh) 2014-02-01
WO2008052636A1 (de) 2008-05-08
US20100068889A1 (en) 2010-03-18
CN101528884A (zh) 2009-09-09
TW200835778A (en) 2008-09-01
JP2010508663A (ja) 2010-03-18
JP5033193B2 (ja) 2012-09-26
MY149145A (en) 2013-07-15
KR20090091733A (ko) 2009-08-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171005