ES2531087T3 - Pastas de grabado que contienen partículas para superficies y capas de silicio - Google Patents

Pastas de grabado que contienen partículas para superficies y capas de silicio Download PDF

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Publication number
ES2531087T3
ES2531087T3 ES07818738T ES07818738T ES2531087T3 ES 2531087 T3 ES2531087 T3 ES 2531087T3 ES 07818738 T ES07818738 T ES 07818738T ES 07818738 T ES07818738 T ES 07818738T ES 2531087 T3 ES2531087 T3 ES 2531087T3
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ES
Spain
Prior art keywords
etching
paste
layers
melting point
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES07818738T
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English (en)
Inventor
Werner Stockum
Sylke Klein
Armin Kuebelbeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
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Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
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Publication of ES2531087T3 publication Critical patent/ES2531087T3/es
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1481—Pastes, optionally in the form of blocks or sticks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)
  • ing And Chemical Polishing (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

Procedimiento para el grabado de superficies y capas de silicio, o de superficies vítreas que consisten en un derivado de silicio, caracterizado por que una pasta alcalina que puede imprimirse y dispensarse que contiene a) al menos un componente de grabado básico, b) al menos un disolvente c) partículas orgánicas muy finas con un punto de fusión bajo y dado el caso, partículas inorgánicas, d) dado el caso, agentes espesantes, y e) dado el caso, aditivos como antiespumantes, agentes tixotrópicos, agentes de control del flujo, desaireadores, promotores de adhesión, se aplica selectivamente sobre la superficie, caracterizado por que durante el tiempo de aplicación la pasta de grabado se calienta a una temperatura superior a 70 ºC, pero inferior a 200 ºC, donde el polvo polimérico que contiene el medio de grabado, seleccionado del grupo de polvo de polietileno, polipropileno o polvo mixto correspondiente, funde con un punto de fusión bajo por debajo de 150 ºC y en estado fundido no se mezcla con el resto de componentes de la pasta de grabado, sino que forma un sistema de dos fases y una capa polimérica delgada sobre el medio de grabado.
ES07818738T 2006-11-01 2007-10-05 Pastas de grabado que contienen partículas para superficies y capas de silicio Active ES2531087T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006051952A DE102006051952A1 (de) 2006-11-01 2006-11-01 Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
PCT/EP2007/008662 WO2008052636A1 (de) 2006-11-01 2007-10-05 Partikelhaltige ätzpasten für siliziumoberflächen und -schichten

Publications (1)

Publication Number Publication Date
ES2531087T3 true ES2531087T3 (es) 2015-03-10

Family

ID=38926215

Family Applications (1)

Application Number Title Priority Date Filing Date
ES07818738T Active ES2531087T3 (es) 2006-11-01 2007-10-05 Pastas de grabado que contienen partículas para superficies y capas de silicio

Country Status (11)

Country Link
US (1) US20100068889A1 (es)
EP (1) EP2099877B1 (es)
JP (1) JP5033193B2 (es)
KR (1) KR101473502B1 (es)
CN (1) CN101528884B (es)
DE (1) DE102006051952A1 (es)
ES (1) ES2531087T3 (es)
HK (1) HK1133030A1 (es)
MY (1) MY149145A (es)
TW (1) TWI425078B (es)
WO (1) WO2008052636A1 (es)

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DE102007058829A1 (de) 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung
JP5575771B2 (ja) * 2008-09-01 2014-08-20 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング エッチングによる薄層ソーラーモジュールの端部除去
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US20100130014A1 (en) * 2008-11-26 2010-05-27 Palo Alto Research Center Incorporated Texturing multicrystalline silicon
DE102009012827A1 (de) * 2009-03-03 2010-10-07 Gebr. Schmid Gmbh & Co. Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür
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DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
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DE102010019079A1 (de) * 2010-04-30 2011-11-03 Gp Solar Gmbh Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen, sowie Verfahren zu dessen Herstellung
CN102893421B (zh) * 2010-05-21 2016-01-20 默克专利股份有限公司 在塑料底材结构上的碳纳米管（cnt）聚合物基质的选择性蚀刻
CN101864569B (zh) * 2010-05-31 2013-01-09 江西赛维Ldk太阳能高科技有限公司 一种制作太阳能电池片的刻蚀装置以及方法
WO2011158118A2 (en) * 2010-06-14 2011-12-22 Indian Institute Of Technology Method and device for forming an electrical contact pattern on a solar cell
EP2596081A1 (en) * 2010-06-14 2013-05-29 Merck Patent GmbH Cross-linking and multi-phase etch pastes for high resolution feature patterning
WO2012023613A1 (ja) * 2010-08-20 2012-02-23 株式会社トクヤマ テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット
EP2651841A1 (en) 2010-12-15 2013-10-23 Sun Chemical Corporation Printable etchant compositions for etching silver nanowire-based transparent, conductive films
US8999186B2 (en) * 2011-04-28 2015-04-07 Merck Patent Gmbh Selectively etching of a polymer matrix on pet
KR20140058563A (ko) * 2011-07-18 2014-05-14 메르크 파텐트 게엠베하 대전방지 및 반사방지 코팅들 그리고 대응하는 적층된 층들의 구조화
CN102432185B (zh) * 2011-09-30 2014-09-10 郑州恒昊玻璃技术有限公司 一种防眩玻璃制品蚀刻液及蚀刻工艺
EP2587564A1 (en) * 2011-10-27 2013-05-01 Merck Patent GmbH Selective etching of a matrix comprising silver nanowires or carbon nanotubes
CN102623568B (zh) * 2012-04-10 2014-08-06 苏州阿特斯阳光电力科技有限公司 一种晶体硅太阳电池扩散死层的去除方法
KR102078293B1 (ko) 2012-05-10 2020-02-17 코닝 인코포레이티드 유리 에칭 매질 및 방법
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JP6081218B2 (ja) * 2013-02-20 2017-02-15 新日鉄住金マテリアルズ株式会社 エッチング装置およびエッチング方法
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
CN103500772B (zh) * 2013-09-06 2016-06-15 江苏爱多光伏科技有限公司 浆料腐蚀法制备背面抛光多晶硅太阳电池的工艺方法
CN103508677A (zh) * 2013-09-24 2014-01-15 苏州诺维克光伏新材料有限公司 一种膏体材料及其应用
US9059341B1 (en) 2014-01-23 2015-06-16 E I Du Pont De Nemours And Company Method for manufacturing an interdigitated back contact solar cell
JP2015173184A (ja) * 2014-03-11 2015-10-01 東京応化工業株式会社 アルカリエッチングマスク剤組成物、及びエッチング方法
CN105236756A (zh) * 2015-09-21 2016-01-13 海南大学 减反射玻璃及其制备方法
CN106800040B (zh) * 2017-02-24 2022-10-21 南京航空航天大学 一种汽车电控复合转向系统及其多目标优化方法
CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN108004598A (zh) * 2017-12-01 2018-05-08 绍兴拓邦电子科技有限公司 一种晶体硅边缘刻蚀添加剂及其使用方法
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CN111559863B (zh) * 2020-05-12 2022-04-19 江苏华鸥玻璃有限公司 一种耐热耐腐蚀的高硼硅棕色玻璃及其制备方法
TWI751568B (zh) * 2020-05-29 2022-01-01 新應材股份有限公司 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺
CN111952409B (zh) * 2020-06-30 2022-04-19 泰州中来光电科技有限公司 一种具有选择性发射极结构的钝化接触电池的制备方法
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Also Published As

Publication number Publication date
DE102006051952A1 (de) 2008-05-08
EP2099877A1 (de) 2009-09-16
US20100068889A1 (en) 2010-03-18
TWI425078B (zh) 2014-02-01
JP5033193B2 (ja) 2012-09-26
EP2099877B1 (de) 2014-11-26
CN101528884B (zh) 2013-09-25
HK1133030A1 (en) 2010-03-12
MY149145A (en) 2013-07-15
KR20090091733A (ko) 2009-08-28
KR101473502B1 (ko) 2014-12-16
WO2008052636A1 (de) 2008-05-08
TW200835778A (en) 2008-09-01
CN101528884A (zh) 2009-09-09
JP2010508663A (ja) 2010-03-18

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