HK1094279A1 - Gallium nitride semiconductor substrate and process for producing the same - Google Patents
Gallium nitride semiconductor substrate and process for producing the sameInfo
- Publication number
- HK1094279A1 HK1094279A1 HK07101261.3A HK07101261A HK1094279A1 HK 1094279 A1 HK1094279 A1 HK 1094279A1 HK 07101261 A HK07101261 A HK 07101261A HK 1094279 A1 HK1094279 A1 HK 1094279A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- producing
- same
- semiconductor substrate
- nitride semiconductor
- gallium nitride
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003365867 | 2003-10-27 | ||
PCT/JP2004/011683 WO2005041283A1 (ja) | 2003-10-27 | 2004-08-06 | 窒化ガリウム系半導体基板と窒化ガリウム系半導体基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1094279A1 true HK1094279A1 (en) | 2007-03-23 |
Family
ID=34510199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK07101261.3A HK1094279A1 (en) | 2003-10-27 | 2007-02-01 | Gallium nitride semiconductor substrate and process for producing the same |
Country Status (8)
Country | Link |
---|---|
US (2) | US20070018284A1 (de) |
EP (1) | EP1679740A4 (de) |
JP (1) | JP4479657B2 (de) |
KR (1) | KR20060090827A (de) |
CN (2) | CN100552888C (de) |
HK (1) | HK1094279A1 (de) |
TW (1) | TW200522187A (de) |
WO (1) | WO2005041283A1 (de) |
Families Citing this family (48)
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US9279193B2 (en) * | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
JP4232605B2 (ja) | 2003-10-30 | 2009-03-04 | 住友電気工業株式会社 | 窒化物半導体基板の製造方法と窒化物半導体基板 |
JP2006352075A (ja) | 2005-05-17 | 2006-12-28 | Sumitomo Electric Ind Ltd | 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板 |
US8771552B2 (en) | 2005-06-23 | 2014-07-08 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
JP4277826B2 (ja) | 2005-06-23 | 2009-06-10 | 住友電気工業株式会社 | 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
US9708735B2 (en) | 2005-06-23 | 2017-07-18 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
JP2007116057A (ja) * | 2005-10-24 | 2007-05-10 | Sumitomo Electric Ind Ltd | 半導体素子の製造方法、半導体素子、半導体レーザ、面発光素子、および光導波路 |
JP2007234952A (ja) * | 2006-03-02 | 2007-09-13 | Sumitomo Electric Ind Ltd | 化合物半導体基板の表面処理方法、化合物半導体の製造方法、化合物半導体基板、および半導体ウエハ |
JP5157081B2 (ja) * | 2006-04-24 | 2013-03-06 | 日亜化学工業株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
KR20090008321A (ko) * | 2006-04-28 | 2009-01-21 | 스미토모덴키고교가부시키가이샤 | 질화갈륨 결정을 제작하는 방법 및 질화갈륨 웨이퍼 |
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US8283694B2 (en) * | 2006-10-19 | 2012-10-09 | Sumitomo Electric Industries, Ltd. | GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device |
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JP4321595B2 (ja) * | 2007-01-23 | 2009-08-26 | 住友電気工業株式会社 | Iii−v族化合物半導体基板の製造方法 |
EP1950326A1 (de) * | 2007-01-29 | 2008-07-30 | Interuniversitair Microelektronica Centrum | Methode zum Entfernen von Schwermetallkontamination aus III-V Halbleiter-Substraten |
EP2175480A4 (de) * | 2007-07-19 | 2012-12-19 | Mitsubishi Chem Corp | Gruppe iii-nitrid-halbleitersubstrat und verfahren zu seiner reinigung |
JP5560528B2 (ja) * | 2008-01-28 | 2014-07-30 | 住友電気工業株式会社 | Iii族窒化物単結晶インゴットの製造方法、及びiii族窒化物単結晶基板の製造方法 |
JP5575372B2 (ja) * | 2008-03-04 | 2014-08-20 | 日立金属株式会社 | 窒化ガリウム基板 |
JP2009272380A (ja) * | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶およびその表面処理方法、iii族窒化物積層体およびその製造方法、ならびにiii族窒化物半導体デバイスおよびその製造方法 |
CN101587859B (zh) * | 2008-05-23 | 2011-03-23 | 中芯国际集成电路制造(北京)有限公司 | 形成半导体互联结构的方法 |
JP2009302409A (ja) * | 2008-06-16 | 2009-12-24 | Sumco Corp | 半導体ウェーハの製造方法 |
JP5678402B2 (ja) * | 2008-08-04 | 2015-03-04 | 住友電気工業株式会社 | ショットキーバリアダイオードおよびその製造方法 |
EP2200077B1 (de) * | 2008-12-22 | 2012-12-05 | Soitec | Verfahren zur Bindung zweier Substrate |
JP4305574B1 (ja) | 2009-01-14 | 2009-07-29 | 住友電気工業株式会社 | Iii族窒化物基板、それを備える半導体デバイス、及び、表面処理されたiii族窒化物基板を製造する方法 |
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JP4513927B1 (ja) | 2009-09-30 | 2010-07-28 | 住友電気工業株式会社 | Iii族窒化物半導体基板、エピタキシャル基板及び半導体デバイス |
CN102148429B (zh) * | 2010-02-06 | 2016-03-30 | 清华大学 | 纳米光学天线阵列的制造方法 |
TWI443741B (zh) * | 2011-01-14 | 2014-07-01 | Univ Nat Chiao Tung | 一種平整化氮化物基板的方法 |
WO2013014713A1 (ja) * | 2011-07-28 | 2013-01-31 | パナソニック株式会社 | 表面改質半導体及びその製造方法並びに粒子配置方法 |
CN102569065A (zh) * | 2011-12-23 | 2012-07-11 | 重庆平伟实业股份有限公司 | 一种二极管芯片的酸洗工艺 |
JP5696734B2 (ja) * | 2013-03-22 | 2015-04-08 | 住友電気工業株式会社 | Iii族窒化物結晶基板、エピタキシャル層付iii族窒化物結晶基板および半導体デバイス |
JP2014192353A (ja) * | 2013-03-27 | 2014-10-06 | Sumitomo Electric Ind Ltd | 基板を処理する方法 |
EP2881982B1 (de) * | 2013-12-05 | 2019-09-04 | IMEC vzw | Verfahren zur Herstellung CMOS-kompatibler Kontaktschichten in Halbleitervorrichtungen |
JP6248359B2 (ja) | 2013-12-20 | 2017-12-20 | 住友電工デバイス・イノベーション株式会社 | 半導体層の表面処理方法 |
KR20150138479A (ko) | 2014-05-29 | 2015-12-10 | 삼성전자주식회사 | 발광 소자 패키지의 제조 방법 |
US10043654B2 (en) * | 2014-07-22 | 2018-08-07 | Sumitomo Electric Industries, Ltd. | Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate |
JP6574104B2 (ja) * | 2015-04-28 | 2019-09-11 | 一般財団法人ファインセラミックスセンター | 窒化物系半導体のエッチング方法および窒化物系半導体の結晶欠陥検出方法 |
JP6038237B2 (ja) * | 2015-06-18 | 2016-12-07 | 住友化学株式会社 | 窒化ガリウム基板の製造方法 |
US10186630B2 (en) * | 2016-08-02 | 2019-01-22 | QMAT, Inc. | Seed wafer for GaN thickening using gas- or liquid-phase epitaxy |
DE102017121480B4 (de) * | 2017-09-15 | 2024-04-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierendes Halbleiterbauteil |
CN110768106B (zh) * | 2018-07-26 | 2021-01-26 | 山东华光光电子股份有限公司 | 一种激光二极管制备方法 |
US10867815B2 (en) * | 2018-09-04 | 2020-12-15 | Tokyo Electron Limited | Photonically tuned etchant reactivity for wet etching |
JP7056511B2 (ja) * | 2018-10-25 | 2022-04-19 | 住友電気工業株式会社 | 面発光レーザの製造方法 |
CN110010461A (zh) * | 2019-04-11 | 2019-07-12 | 中国科学院半导体研究所 | 氮化物材料的湿法腐蚀方法 |
CN110797259B (zh) * | 2019-10-23 | 2022-03-29 | 中国电子科技集团公司第十三研究所 | 同质外延氮化镓衬底处理方法及氮化镓衬底 |
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JP3957268B2 (ja) * | 2002-01-17 | 2007-08-15 | シルトロニック・ジャパン株式会社 | 半導体基板の洗浄方法 |
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JP3929939B2 (ja) * | 2003-06-25 | 2007-06-13 | 株式会社東芝 | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
-
2004
- 2004-08-06 CN CNB2004800317980A patent/CN100552888C/zh not_active Expired - Lifetime
- 2004-08-06 US US10/595,523 patent/US20070018284A1/en not_active Abandoned
- 2004-08-06 JP JP2005514909A patent/JP4479657B2/ja not_active Expired - Lifetime
- 2004-08-06 CN CN2009101706533A patent/CN101661910B/zh not_active Expired - Lifetime
- 2004-08-06 WO PCT/JP2004/011683 patent/WO2005041283A1/ja active Application Filing
- 2004-08-06 KR KR1020067007108A patent/KR20060090827A/ko not_active Application Discontinuation
- 2004-08-06 EP EP04771650A patent/EP1679740A4/de not_active Withdrawn
- 2004-08-10 TW TW093123946A patent/TW200522187A/zh unknown
-
2007
- 2007-02-01 HK HK07101261.3A patent/HK1094279A1/xx not_active IP Right Cessation
-
2012
- 2012-02-06 US US13/366,386 patent/US20120135549A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI332236B (de) | 2010-10-21 |
US20120135549A1 (en) | 2012-05-31 |
CN1875465A (zh) | 2006-12-06 |
CN100552888C (zh) | 2009-10-21 |
KR20060090827A (ko) | 2006-08-16 |
EP1679740A1 (de) | 2006-07-12 |
JPWO2005041283A1 (ja) | 2007-04-26 |
CN101661910A (zh) | 2010-03-03 |
EP1679740A4 (de) | 2009-09-02 |
CN101661910B (zh) | 2012-07-18 |
US20070018284A1 (en) | 2007-01-25 |
JP4479657B2 (ja) | 2010-06-09 |
TW200522187A (en) | 2005-07-01 |
WO2005041283A1 (ja) | 2005-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20130806 |