HK1076842A1 - Controlled cooling of sputter targets - Google Patents

Controlled cooling of sputter targets

Info

Publication number
HK1076842A1
HK1076842A1 HK05110029A HK05110029A HK1076842A1 HK 1076842 A1 HK1076842 A1 HK 1076842A1 HK 05110029 A HK05110029 A HK 05110029A HK 05110029 A HK05110029 A HK 05110029A HK 1076842 A1 HK1076842 A1 HK 1076842A1
Authority
HK
Hong Kong
Prior art keywords
controlled cooling
sputter targets
sputter
targets
cooling
Prior art date
Application number
HK05110029A
Other languages
English (en)
Inventor
Yuanda R Cheng
Michael Gene Racine
Steve Roger Kennedy
Anand S Deodutt
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of HK1076842A1 publication Critical patent/HK1076842A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
HK05110029A 2004-04-23 2005-11-10 Controlled cooling of sputter targets HK1076842A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/829,952 US20050236270A1 (en) 2004-04-23 2004-04-23 Controlled cooling of sputter targets

Publications (1)

Publication Number Publication Date
HK1076842A1 true HK1076842A1 (en) 2006-01-27

Family

ID=34930924

Family Applications (1)

Application Number Title Priority Date Filing Date
HK05110029A HK1076842A1 (en) 2004-04-23 2005-11-10 Controlled cooling of sputter targets

Country Status (8)

Country Link
US (1) US20050236270A1 (ja)
EP (1) EP1589129B1 (ja)
JP (1) JP2005307351A (ja)
CN (1) CN1690246A (ja)
DE (1) DE602004004756T2 (ja)
HK (1) HK1076842A1 (ja)
SG (1) SG120205A1 (ja)
TW (1) TWI296655B (ja)

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US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20070045108A1 (en) * 2005-08-26 2007-03-01 Demaray Richard E Monolithic sputter target backing plate with integrated cooling passages
US20080173541A1 (en) * 2007-01-22 2008-07-24 Eal Lee Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling
EP2267179B1 (en) * 2009-06-25 2012-12-26 Solmates B.V. Target cooling device
US9512516B1 (en) * 2009-09-24 2016-12-06 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Cooling water jet pack for high power rotary cathodes
DE102010015149A1 (de) * 2010-04-16 2011-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Beschichten eines Substrates innerhalb einer Vakuumkammer mittels plasmaunterstützter chemischer Dampfabscheidung
JP5727740B2 (ja) * 2010-09-24 2015-06-03 株式会社高純度化学研究所 バッキングプレートの製造方法
JP2014523969A (ja) 2011-06-27 2014-09-18 ソレラス・リミテッド スパッタリングターゲット
US9620339B2 (en) * 2013-03-15 2017-04-11 Applied Materials, Inc. Sputter source for semiconductor process chambers
KR102052074B1 (ko) 2013-04-04 2019-12-05 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
US9779920B2 (en) * 2013-08-14 2017-10-03 Applied Materials, Inc. Sputtering target with backside cooling grooves
CN108926783A (zh) * 2017-05-26 2018-12-04 南京中硼联康医疗科技有限公司 中子捕获治疗系统及用于粒子线产生装置的靶材
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN109440070A (zh) * 2018-11-19 2019-03-08 东部超导科技（苏州）有限公司 基于ibad纳米涂层设备的溅射靶冷却装置
KR20200069884A (ko) 2018-12-07 2020-06-17 에스케이하이닉스 주식회사 스퍼터링 타겟 및 그 제조 방법

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US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
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Also Published As

Publication number Publication date
DE602004004756D1 (de) 2007-03-29
SG120205A1 (en) 2006-03-28
CN1690246A (zh) 2005-11-02
TWI296655B (en) 2008-05-11
DE602004004756T2 (de) 2007-10-31
US20050236270A1 (en) 2005-10-27
EP1589129B1 (en) 2007-02-14
JP2005307351A (ja) 2005-11-04
EP1589129A1 (en) 2005-10-26
TW200535266A (en) 2005-11-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20101216