DE602004004756D1 - Kontrollierte Abkühlung von Zerstaubungstarget - Google Patents

Kontrollierte Abkühlung von Zerstaubungstarget

Info

Publication number
DE602004004756D1
DE602004004756D1 DE602004004756T DE602004004756T DE602004004756D1 DE 602004004756 D1 DE602004004756 D1 DE 602004004756D1 DE 602004004756 T DE602004004756 T DE 602004004756T DE 602004004756 T DE602004004756 T DE 602004004756T DE 602004004756 D1 DE602004004756 D1 DE 602004004756D1
Authority
DE
Germany
Prior art keywords
sputtering target
controlled cooling
cooling
controlled
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004004756T
Other languages
English (en)
Other versions
DE602004004756T2 (de
Inventor
Yuanda R Cheng
Michael Gene Racine
Steve Roger Kennedy
Anand S Deodutt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Inc
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of DE602004004756D1 publication Critical patent/DE602004004756D1/de
Application granted granted Critical
Publication of DE602004004756T2 publication Critical patent/DE602004004756T2/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602004004756T 2004-04-23 2004-12-16 Kontrollierte Abkühlung von Zerstaubungstarget Expired - Fee Related DE602004004756T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US829952 1997-04-01
US10/829,952 US20050236270A1 (en) 2004-04-23 2004-04-23 Controlled cooling of sputter targets

Publications (2)

Publication Number Publication Date
DE602004004756D1 true DE602004004756D1 (de) 2007-03-29
DE602004004756T2 DE602004004756T2 (de) 2007-10-31

Family

ID=34930924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004004756T Expired - Fee Related DE602004004756T2 (de) 2004-04-23 2004-12-16 Kontrollierte Abkühlung von Zerstaubungstarget

Country Status (8)

Country Link
US (1) US20050236270A1 (de)
EP (1) EP1589129B1 (de)
JP (1) JP2005307351A (de)
CN (1) CN1690246A (de)
DE (1) DE602004004756T2 (de)
HK (1) HK1076842A1 (de)
SG (1) SG120205A1 (de)
TW (1) TWI296655B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20070045108A1 (en) * 2005-08-26 2007-03-01 Demaray Richard E Monolithic sputter target backing plate with integrated cooling passages
US20080173541A1 (en) * 2007-01-22 2008-07-24 Eal Lee Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling
EP2267179B1 (de) * 2009-06-25 2012-12-26 Solmates B.V. Zielkühlvorrichtung
US9512516B1 (en) 2009-09-24 2016-12-06 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Cooling water jet pack for high power rotary cathodes
DE102010015149A1 (de) * 2010-04-16 2011-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Beschichten eines Substrates innerhalb einer Vakuumkammer mittels plasmaunterstützter chemischer Dampfabscheidung
JP5727740B2 (ja) * 2010-09-24 2015-06-03 株式会社高純度化学研究所 バッキングプレートの製造方法
KR101988391B1 (ko) 2011-06-27 2019-06-12 솔레라스 리미티드 스퍼터링 타겟
US9620339B2 (en) * 2013-03-15 2017-04-11 Applied Materials, Inc. Sputter source for semiconductor process chambers
KR102052074B1 (ko) 2013-04-04 2019-12-05 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
US9779920B2 (en) * 2013-08-14 2017-10-03 Applied Materials, Inc. Sputtering target with backside cooling grooves
CN108926783B (zh) * 2017-05-26 2024-07-12 南京中硼联康医疗科技有限公司 中子捕获治疗系统及用于粒子线产生装置的靶材
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN109440070A (zh) * 2018-11-19 2019-03-08 东部超导科技（苏州）有限公司 基于ibad纳米涂层设备的溅射靶冷却装置
US10995401B2 (en) 2018-12-07 2021-05-04 SK Hynix Inc. Sputtering target and manufacturing method thereof

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933835C2 (de) * 1979-08-21 1987-02-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kühlteller für Aufstäubanlagen
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
JPS63171446A (ja) * 1987-01-09 1988-07-15 Mitsubishi Kasei Corp 光学的記録用媒体の製造方法
JP2753306B2 (ja) * 1988-03-18 1998-05-20 株式会社日立製作所 イオンビーム加工方法及び集束イオンビーム装置
US5009765A (en) * 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
AU8629491A (en) * 1990-08-30 1992-03-30 Materials Research Corporation Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith
US5143590A (en) * 1991-07-10 1992-09-01 Johnson Matthey Inc. Method of manufacturing sputtering target assembly
US5230459A (en) * 1992-03-18 1993-07-27 Tosoh Smd, Inc. Method of bonding a sputter target-backing plate assembly assemblies produced thereby
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5507931A (en) * 1993-12-30 1996-04-16 Deposition Technologies, Inc. Sputter deposition process
US5628889A (en) * 1994-09-06 1997-05-13 International Business Machines Corporation High power capacity magnetron cathode
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US5723033A (en) * 1995-09-06 1998-03-03 Akashic Memories Corporation Discrete track media produced by underlayer laser ablation
US6254737B1 (en) * 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
JP3460506B2 (ja) * 1996-11-01 2003-10-27 三菱マテリアル株式会社 高誘電体膜形成用スパッタリングターゲット
JP4142753B2 (ja) * 1996-12-26 2008-09-03 株式会社東芝 スパッタターゲット、スパッタ装置、半導体装置およびその製造方法
EP0954620A4 (de) * 1997-01-16 2002-01-02 Bottomfield Layne F Dampfphasenabscheidungskomponente und entsprechende verfahren
GB2321646B (en) * 1997-02-04 2001-10-17 Christopher Robert Eccles Improvements in or relating to electrodes
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6074279A (en) * 1997-02-28 2000-06-13 Tosoh Corporation Process for producing sputtering target
JP3755559B2 (ja) * 1997-04-15 2006-03-15 株式会社日鉱マテリアルズ スパッタリングターゲット
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
JP3576364B2 (ja) * 1997-10-13 2004-10-13 株式会社日鉱マテリアルズ Ｉｔｏスパッタリングターゲットのクリーニング方法
EP0918351A1 (de) * 1997-11-19 1999-05-26 Sinvaco N.V. Flaches magnetron mit bewegbarer Magnetsanlage
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6579431B1 (en) * 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
US6077404A (en) * 1998-02-17 2000-06-20 Applied Material, Inc. Reflow chamber and process
US6193821B1 (en) * 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
US6309556B1 (en) * 1998-09-03 2001-10-30 Praxair S.T. Technology, Inc. Method of manufacturing enhanced finish sputtering targets
US6749103B1 (en) * 1998-09-11 2004-06-15 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
JP4511733B2 (ja) * 1998-09-11 2010-07-28 トーソー エスエムディー，インク． スパッターターゲット低温接合法とそれによって製造されるターゲットアセンブリ
JP3820787B2 (ja) * 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US6291777B1 (en) * 1999-02-17 2001-09-18 Applied Materials, Inc. Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same
US6207472B1 (en) * 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate
US6224718B1 (en) * 1999-07-14 2001-05-01 Veeco Instruments, Inc. Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides
US6569294B1 (en) * 1999-07-15 2003-05-27 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
US6251782B1 (en) * 1999-07-23 2001-06-26 Vanguard International Semiconductor Corporation Specimen preparation by focused ion beam technique
US6423161B1 (en) * 1999-10-15 2002-07-23 Honeywell International Inc. High purity aluminum materials
US6787003B2 (en) * 1999-12-03 2004-09-07 N.V. Bekaert S.A. Sputtering target and methods of making and using same
EP1322444A4 (de) * 2000-09-11 2008-01-23 Tosoh Smd Inc Verfahren zur herstellung von sputtertargets mit inneren kühlkanälen
US6946039B1 (en) * 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
SG116432A1 (en) * 2000-12-26 2005-11-28 Kobe Steel Ltd Reflective layer or semi-transparent reflective layer for use in optical information recording media, optical information recording media and sputtering target for use in the optical information recording media.
US6599405B2 (en) * 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
US6638402B2 (en) * 2001-06-05 2003-10-28 Praxair S.T. Technology, Inc. Ring-type sputtering target
US6708870B2 (en) * 2002-05-24 2004-03-23 Praxair S.T. Technology, Inc. Method for forming sputter target assemblies
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly

Also Published As

Publication number Publication date
EP1589129A1 (de) 2005-10-26
HK1076842A1 (en) 2006-01-27
DE602004004756T2 (de) 2007-10-31
TW200535266A (en) 2005-11-01
JP2005307351A (ja) 2005-11-04
CN1690246A (zh) 2005-11-02
EP1589129B1 (de) 2007-02-14
SG120205A1 (en) 2006-03-28
TWI296655B (en) 2008-05-11
US20050236270A1 (en) 2005-10-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee