HK1061112A1 - Polysilicon etching method - Google Patents

Polysilicon etching method

Info

Publication number
HK1061112A1
HK1061112A1 HK04104069A HK04104069A HK1061112A1 HK 1061112 A1 HK1061112 A1 HK 1061112A1 HK 04104069 A HK04104069 A HK 04104069A HK 04104069 A HK04104069 A HK 04104069A HK 1061112 A1 HK1061112 A1 HK 1061112A1
Authority
HK
Hong Kong
Prior art keywords
etching method
polysilicon etching
polysilicon
etching
Prior art date
Application number
HK04104069A
Other languages
English (en)
Inventor
Tamito Suzuki
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of HK1061112A1 publication Critical patent/HK1061112A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/47—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a floating-gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
HK04104069A 2002-09-27 2004-06-08 Polysilicon etching method HK1061112A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002284566A JP3891087B2 (ja) 2002-09-27 2002-09-27 ポリシリコンエッチング方法

Publications (1)

Publication Number Publication Date
HK1061112A1 true HK1061112A1 (en) 2004-09-03

Family

ID=32104945

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04104069A HK1061112A1 (en) 2002-09-27 2004-06-08 Polysilicon etching method

Country Status (6)

Country Link
US (1) US6995093B2 (ko)
JP (1) JP3891087B2 (ko)
KR (1) KR100555366B1 (ko)
CN (1) CN100358116C (ko)
HK (1) HK1061112A1 (ko)
TW (1) TWI242809B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100680948B1 (ko) * 2004-07-21 2007-02-08 주식회사 하이닉스반도체 반도체 소자의 스토리지 노드 콘택 형성방법
KR100744068B1 (ko) * 2005-04-29 2007-07-30 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조 방법
KR100771373B1 (ko) 2005-11-02 2007-10-30 동부일렉트로닉스 주식회사 반도체 소자의 플라즈마 식각 방법
KR100859490B1 (ko) * 2007-06-12 2008-09-23 주식회사 동부하이텍 반도체 트랜지스터 제조 방법
US8642475B2 (en) 2010-12-21 2014-02-04 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with reduced polysilicon residue and method of manufacture thereof
JP2015041724A (ja) * 2013-08-23 2015-03-02 東京エレクトロン株式会社 半導体デバイスを製造する方法
CN110085551B (zh) * 2018-01-25 2021-05-25 长鑫存储技术有限公司 存储元件的位线的制作过程、存储元件及其制作方法
CN109887914B (zh) * 2019-03-07 2021-04-23 上海华虹宏力半导体制造有限公司 分栅快闪存储器及其制备方法
CN112289676B (zh) * 2020-03-11 2023-06-13 深圳方正微电子有限公司 一种去除半导体器件制造中的多晶硅残留的方法
CN114334582B (zh) * 2021-12-23 2024-03-26 北京北方华创微电子装备有限公司 场发射器件结构的制造方法及场发射器件结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910008983B1 (ko) 1988-12-20 1991-10-26 현대전자산업 주식회사 비등방성 식각을 이용한 잔유물 제거방법
JP3088178B2 (ja) * 1991-04-22 2000-09-18 日本電気株式会社 ポリシリコン膜のエッチング方法
JP2574094B2 (ja) * 1992-02-27 1997-01-22 株式会社日本製鋼所 エッチング方法
JP2822952B2 (ja) 1995-08-30 1998-11-11 日本電気株式会社 半導体装置の製造方法
US5751040A (en) * 1996-09-16 1998-05-12 Taiwan Semiconductor Manufacturing Company Ltd. Self-aligned source/drain mask ROM memory cell using trench etched channel
JP3176311B2 (ja) * 1997-03-31 2001-06-18 日本電気株式会社 シリコン層のエッチング方法
US6037266A (en) * 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP2001060530A (ja) 1999-08-20 2001-03-06 Tdk Corp 積層セラミック電子部品の外部電極形成方法
JP2001237218A (ja) 2000-02-21 2001-08-31 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
TW200416871A (en) 2004-09-01
JP3891087B2 (ja) 2007-03-07
KR20040027364A (ko) 2004-04-01
CN1494117A (zh) 2004-05-05
US6995093B2 (en) 2006-02-07
CN100358116C (zh) 2007-12-26
US20040082184A1 (en) 2004-04-29
KR100555366B1 (ko) 2006-02-24
JP2004119905A (ja) 2004-04-15
TWI242809B (en) 2005-11-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20120924