HK1050377A1 - Composition and method for planarizing surfaces. - Google Patents

Composition and method for planarizing surfaces.

Info

Publication number
HK1050377A1
HK1050377A1 HK03102537A HK03102537A HK1050377A1 HK 1050377 A1 HK1050377 A1 HK 1050377A1 HK 03102537 A HK03102537 A HK 03102537A HK 03102537 A HK03102537 A HK 03102537A HK 1050377 A1 HK1050377 A1 HK 1050377A1
Authority
HK
Hong Kong
Prior art keywords
composition
planarizing
polishing
abrasive particles
planarizing surfaces
Prior art date
Application number
HK03102537A
Other languages
English (en)
Inventor
Mingming Fang
Brian L Mueller
James A Dirksen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/440,401 external-priority patent/US6293848B1/en
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of HK1050377A1 publication Critical patent/HK1050377A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
HK03102537A 1999-11-15 2003-04-09 Composition and method for planarizing surfaces. HK1050377A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/440,401 US6293848B1 (en) 1999-11-15 1999-11-15 Composition and method for planarizing surfaces
US09/625,142 US6527817B1 (en) 1999-11-15 2000-07-25 Composition and method for planarizing surfaces
PCT/US2000/031653 WO2001036554A1 (en) 1999-11-15 2000-11-15 Composition and method for planarizing surfaces

Publications (1)

Publication Number Publication Date
HK1050377A1 true HK1050377A1 (en) 2003-06-20

Family

ID=27032408

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03102537A HK1050377A1 (en) 1999-11-15 2003-04-09 Composition and method for planarizing surfaces.

Country Status (11)

Country Link
US (2) US6527817B1 (zh)
EP (1) EP1250390B1 (zh)
JP (1) JP4943613B2 (zh)
KR (1) KR100732078B1 (zh)
CN (1) CN1160430C (zh)
AT (1) ATE258577T1 (zh)
AU (1) AU1660001A (zh)
DE (1) DE60008025T2 (zh)
HK (1) HK1050377A1 (zh)
TW (1) TW524836B (zh)
WO (1) WO2001036554A1 (zh)

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US7422730B2 (en) * 2003-04-02 2008-09-09 Saint-Gobain Ceramics & Plastics, Inc. Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same
US7306748B2 (en) 2003-04-25 2007-12-11 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining ceramics
US8025808B2 (en) 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
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JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
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US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
TWI386468B (zh) 2006-12-20 2013-02-21 Saint Gobain Ceramics 加工無機非金屬工件之方法
WO2008105342A1 (ja) * 2007-02-27 2008-09-04 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
EP2215176B1 (en) * 2007-10-05 2016-01-06 Saint-Gobain Ceramics & Plastics, Inc. Improved silicon carbide particles, methods of fabrication, and methods using same
AU2008308583B2 (en) * 2007-10-05 2012-03-08 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
US8523968B2 (en) * 2008-12-23 2013-09-03 Saint-Gobain Abrasives, Inc. Abrasive article with improved packing density and mechanical properties and method of making
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
JP5945123B2 (ja) * 2012-02-01 2016-07-05 株式会社フジミインコーポレーテッド 研磨用組成物
JP2013247341A (ja) 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
MA35300B1 (fr) * 2013-01-18 2014-08-01 Univ Hassan 1Er Settat Optimisation des phosphates pour les traitements de surface et les opérations de polissage
CN105378901B (zh) * 2013-07-05 2020-09-15 富士胶片电子材料有限公司 蚀刻剂、蚀刻方法和蚀刻剂制备液
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
JP6723995B2 (ja) * 2014-10-21 2020-07-15 キャボット マイクロエレクトロニクス コーポレイション コバルトディッシング制御剤
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
WO2020017894A1 (ko) 2018-07-20 2020-01-23 주식회사 동진쎄미켐 화학적 기계적 연마 조성물, 화학적 기계적 연마 슬러리 및 기판의 연마 방법

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Also Published As

Publication number Publication date
TW524836B (en) 2003-03-21
US20030124852A1 (en) 2003-07-03
ATE258577T1 (de) 2004-02-15
CN1399668A (zh) 2003-02-26
JP2003514949A (ja) 2003-04-22
KR20020056913A (ko) 2002-07-10
DE60008025D1 (de) 2004-03-04
US6527817B1 (en) 2003-03-04
US6716755B2 (en) 2004-04-06
DE60008025T2 (de) 2004-06-09
KR100732078B1 (ko) 2007-06-27
AU1660001A (en) 2001-05-30
JP4943613B2 (ja) 2012-05-30
CN1160430C (zh) 2004-08-04
EP1250390B1 (en) 2004-01-28
WO2001036554A1 (en) 2001-05-25
EP1250390A1 (en) 2002-10-23

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Legal Events

Date Code Title Description
CHRG Changes in the register

Free format text: CORRECTION OF THE NAME OF THE INVENTOR FROM BRAIN L. MUELLER TO BRIAN L. MUELLER

PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20111115