KR20020056913A - 표면을 평탄화하는 조성물 및 방법 - Google Patents
표면을 평탄화하는 조성물 및 방법 Download PDFInfo
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- KR20020056913A KR20020056913A KR1020027006172A KR20027006172A KR20020056913A KR 20020056913 A KR20020056913 A KR 20020056913A KR 1020027006172 A KR1020027006172 A KR 1020027006172A KR 20027006172 A KR20027006172 A KR 20027006172A KR 20020056913 A KR20020056913 A KR 20020056913A
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- South Korea
- Prior art keywords
- composition
- abrasive particles
- weight
- particle size
- polishing
- Prior art date
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- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 239000001205 polyphosphate Substances 0.000 description 1
- 235000011176 polyphosphates Nutrition 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical class [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 150000003892 tartrate salts Chemical class 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000007970 thio esters Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- CPWJKGIJFGMVPL-UHFFFAOYSA-K tricesium;phosphate Chemical compound [Cs+].[Cs+].[Cs+].[O-]P([O-])([O-])=O CPWJKGIJFGMVPL-UHFFFAOYSA-K 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Chemically Coating (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
조성물 | 발연 실리카 상대적 중량% | 축합-중합 실리카 상대적 중량% | 제거 속도 (분당 마이크로 인치)[Å/min] | |
HAN 무첨가 | 0.25 중량% HAN | |||
1A | 0 | 100 | 2.10[534] | 2.70[686] |
1B | 25 | 75 | 2.28[579] | 3.40[864] |
1C | 50 | 50 | 2.28[579] | 3.89[988] |
1D | 75 | 25 | 2.10[534] | 5.70[1448] |
1E | 100 | 0 | 1.41[358] | 1.70[216] |
조성물 | 발연 실리카상대적 중량% | 축합-중합 실리카 상대적 중량% | 제거 속도 (분당 마이크로 인치)[Å/min] | |
APS 무첨가NH3무첨가 | 0.25 중량% APS0.25 중량% NH3 | |||
2A | 0 | 100 | 2.10[534] | 2.80[711] |
2B | 25 | 75 | 2.28[579] | 6.40[1626] |
2C | 50 | 50 | 2.28[579] | 4.60[1169] |
2D | 75 | 25 | 2.10[534] | 3.20[813] |
2E | 100 | 0 | 1.41[358] | 0.85[216] |
조성물 | 발연 실리카상대적 중량% | 축합-중합 실리카 상대적 중량% | 제거 속도 [Å/min] | |
Fe(NO3)3무첨가 | 0.25 중량% Fe(NO3)3 | |||
3A | 0 | 100 | 534 | 1653 |
3B | 25 | 75 | 534 | 1907 |
3C | 50 | 50 | 579 | 2161 |
3D | 75 | 25 | 579 | 2314 |
3E | 100 | 0 | 358 | 1424 |
조성물 | 발연 실리카중량% | 공칭 20 nm실리카 중량% | 공칭 40 nm실리카 중량% | 공칭 80 nm실리카 중량% | 제거 속도[Å/min] |
4A1 | 3.2 | 0.8 | 0 | 0 | 1471 |
4A2 | 3.2 | 0 | 0.8 | 0 | 1326 |
4A3 | 3.2 | 0 | 0 | 0.8 | 1634 |
4B1 | 2.4 | 1.6 | 0 | 0 | 1021 |
4B2 | 2.4 | 0 | 1.6 | 0 | 1474 |
4B3 | 2.4 | 0 | 0 | 1.6 | 1639 |
4C1 | 1.6 | 2.4 | 0 | 0 | 826 |
4C2 | 1.6 | 0 | 2.4 | 0 | 788 |
4C3 | 1.6 | 0 | 0 | 2.4 | 1123 |
4D1 | 3.2 | 0.4 | 0.4 | 0 | 1748 |
4D2 | 3.2 | 0.4 | 0 | 0.4 | 1855 |
4D3 | 3.2 | 0 | 0.4 | 0.4 | 1685 |
4E1 | 2.4 | 0.8 | 0.8 | 0 | 1324 |
4E2 | 2.4 | 0.8 | 0 | 0.8 | 1283 |
4E3 | 2.4 | 0 | 0.8 | 0.8 | 1484 |
4F1 | 1.6 | 1.2 | 1.2 | 0 | 1207 |
4F2 | 1.6 | 1.2 | 0 | 1.2 | 1242 |
4F3 | 1.6 | 0 | 1.2 | 1.2 | 1143 |
4G1 | 3.2 | 0.267 | 0.267 | 0.267 | 2002 |
조성물 | 발연 실리카상대적 중량% | 축합-중합 실리카상대적 중량% | 제거 속도[Å/min] |
5A | 0 | 100 | 2062 |
5B | 60 | 40 | 2001 |
5C | 75 | 25 | 2046 |
5D | 90 | 10 | 2715 |
5E | 100 | 0 | 2234 |
조성물 | 발연 실리카중량% | 축합-중합실리카 중량% | H2O2중량% | 글리신 중량% | 제거 속도[Å/min] |
6A | 0 | 4 | 1.5 | 1 | 1676 |
6B | 1 | 3 | 1.5 | 1 | 2134 |
6C | 2 | 2 | 1.5 | 1 | 2388 |
6D | 3 | 1 | 1.5 | 1 | 2464 |
6E | 4 | 0 | 1.5 | 1 | 432 |
조성물 | 발연 실리카중량% | 축합-중합실리카 중량% | H2O2중량% | STP 중량% | 제거 속도[Å/min] |
7A | 0 | 4 | 1.5 | 0.5 | 1702 |
7B | 1 | 3 | 1.5 | 0.5 | 1753 |
7C | 2 | 2 | 1.5 | 0.5 | 1930 |
7D | 3 | 1 | 1.5 | 0.5 | 2311 |
7E | 4 | 0 | 1.5 | 0.5 | 356 |
Claims (27)
- (a) 액체 담체, (b) 화학적 촉진제 및 (c) 약 5-90 중량%의 발연 금속 산화물 및 약 10-95 중량%의 연마 입자 (여기서 약 90% 이상의 연마 입자 (입자 수로서)가 100 nm 이하의 입자 크기를 가짐)를 포함하는 고체를 포함하는 표면의 평탄화 또는 연마용 조성물.
- 제1항에 있어서, 상기 고체가 약 0.1 이상의 충전 밀도를 갖는 조성물.
- 제2항에 있어서, 상기 고체가 약 0.3 이상의 충전 밀도를 갖는 조성물.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 고체가 약 10-85 중량%의 발연 금속 산화물 및 약 15-90 중량%의 연마 입자를 포함하는 조성물.
- 제4항에 있어서, 상기 고체가 약 15-75 중량%의 발연 금속 산화물 및 약 25-85 중량%의 연마 입자를 포함하는 조성물.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 발연 금속 산화물이 발연 실리카인 조성물.
- 제1항 내지 제6항 중 어느 한 항에 있어서, 상기 연마 입자가 축합-중합 금속 산화물 입자인 조성물.
- 제1항 내지 제7항 중 어느 한 항에 있어서, 약 95% 이상의 연마 입자 (입자 수로서)가 100 nm 이하의 입자 크기를 갖는 조성물.
- 제8항에 있어서, 약 98% 이상의 연마 입자 (입자 수로서)가 100 nm 이하의 입자 크기를 갖는 조성물.
- 제9항에 있어서, 실질적으로 모든 연마 입자 (입자 수로서)가 100 nm 이하의 입자 크기를 갖는 조성물.
- 제1항 내지 제10항 중 어느 한 항에 있어서, 약 90% 이상의 연마 입자 (입자 수로서)가 5 nm 이상의 입자 크기를 갖는 조성물.
- 제11항에 있어서, 약 95% 이상의 연마 입자 (입자 수로서)가 5 nm 이상의 입자 크기를 갖는 조성물.
- 제12항에 있어서, 약 98% 이상의 연마 입자 (입자 수로서)가 5 nm 이상의 입자 크기를 갖는 조성물.
- 제13항에 있어서, 실질적으로 모든 연마 입자 (입자 수로서)가 5 nm 이상의 입자 크기를 갖는 조성물.
- 제1항 내지 제14항 중 어느 한 항에 있어서, 상기 연마 입자가 약 1.3 이상의 입자 수에 의한 기하 표준 편차 (σg)에 의해 특성화되는 연마 입자의 입자 크기 분포를 갖는 조성물.
- 제1항 내지 제15항 중 어느 한 항에 있어서, 상기 고체가 조성물의 약 0.1-40 중량%의 농도로 존재하는 조성물.
- 제1항 내지 제16항 중 어느 한 항에 있어서, 담체가 물인 조성물.
- 제1항 내지 제17항 중 어느 한 항에 있어서, 화학적 촉진제가 황산염, 과황산염 또는 질산염인 조성물.
- 제18항에 있어서, 화학적 촉진제가 과황산 암모늄, 질산 철(III) 및 질산 히드록실아민으로 이루어지는 군으로부터 선택되는 조성물.
- 제1항 내지 제19항 중 어느 한 항에 있어서, 상기 조성물이 2 이상의 화학적 촉진제를 포함하는 조성물.
- 제20항에 있어서, 상기 조성물이 산화제 및 착화제를 포함하는 조성물.
- 제21항에 있어서, 착화제가 아민-함유 화합물, 인산염 이온의 공급원, 포스포네이트 이온의 공급원, 카르복실레이트 및 이들의 조합으로 이루어지는 군으로부터 선택되는 조성물.
- 제22항에 있어서, 상기 조성물이 과산화수소 및 글리신을 포함하는 조성물.
- 표면을 제1항 내지 제19항 중 어느 한 항의 조성물과 접촉시키는 것을 포함하는 표면의 평탄화 또는 연마 방법.
- 제24항에 있어서, 상기 표면이 메모리 또는 경질 디스크 표면인 방법.
- 제25항에 있어서, 메모리 또는 경질 디스크 표면이 니켈-인 표면인 방법.
- 표면을 제20항 내지 제23항 중 어느 한 항의 조성물과 접촉시키는 것을 포함하는 표면의 평탄화 또는 연마 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/440,401 US6293848B1 (en) | 1999-11-15 | 1999-11-15 | Composition and method for planarizing surfaces |
US09/440,401 | 1999-11-15 | ||
US09/625,142 | 2000-07-25 | ||
US09/625,142 US6527817B1 (en) | 1999-11-15 | 2000-07-25 | Composition and method for planarizing surfaces |
Publications (2)
Publication Number | Publication Date |
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KR20020056913A true KR20020056913A (ko) | 2002-07-10 |
KR100732078B1 KR100732078B1 (ko) | 2007-06-27 |
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KR1020027006172A KR100732078B1 (ko) | 1999-11-15 | 2000-11-15 | 표면을 평탄화하는 조성물 및 방법 |
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US (2) | US6527817B1 (ko) |
EP (1) | EP1250390B1 (ko) |
JP (1) | JP4943613B2 (ko) |
KR (1) | KR100732078B1 (ko) |
CN (1) | CN1160430C (ko) |
AT (1) | ATE258577T1 (ko) |
AU (1) | AU1660001A (ko) |
DE (1) | DE60008025T2 (ko) |
HK (1) | HK1050377A1 (ko) |
TW (1) | TW524836B (ko) |
WO (1) | WO2001036554A1 (ko) |
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US11286403B2 (en) | 2018-07-20 | 2022-03-29 | Dongjin Semichem Co., Ltd | Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate |
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TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
WO2003020839A1 (en) * | 2001-09-03 | 2003-03-13 | Showa Denko K.K. | Polishing composition |
US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
US20040144038A1 (en) * | 2002-12-09 | 2004-07-29 | Junaid Ahmed Siddiqui | Composition and associated method for oxide chemical mechanical planarization |
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US8025808B2 (en) | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
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2000
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- 2000-11-15 KR KR1020027006172A patent/KR100732078B1/ko active IP Right Grant
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- 2000-11-15 AU AU16600/01A patent/AU1660001A/en not_active Abandoned
- 2000-12-01 TW TW089124166A patent/TW524836B/zh not_active IP Right Cessation
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US11286403B2 (en) | 2018-07-20 | 2022-03-29 | Dongjin Semichem Co., Ltd | Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate |
Also Published As
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JP2003514949A (ja) | 2003-04-22 |
CN1160430C (zh) | 2004-08-04 |
US20030124852A1 (en) | 2003-07-03 |
WO2001036554A1 (en) | 2001-05-25 |
DE60008025D1 (de) | 2004-03-04 |
US6527817B1 (en) | 2003-03-04 |
CN1399668A (zh) | 2003-02-26 |
US6716755B2 (en) | 2004-04-06 |
ATE258577T1 (de) | 2004-02-15 |
HK1050377A1 (en) | 2003-06-20 |
DE60008025T2 (de) | 2004-06-09 |
AU1660001A (en) | 2001-05-30 |
EP1250390A1 (en) | 2002-10-23 |
JP4943613B2 (ja) | 2012-05-30 |
EP1250390B1 (en) | 2004-01-28 |
TW524836B (en) | 2003-03-21 |
KR100732078B1 (ko) | 2007-06-27 |
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