HK1039944B - 用以沉積金屬和含金屬的薄膜的揮發性前體 - Google Patents

用以沉積金屬和含金屬的薄膜的揮發性前體

Info

Publication number
HK1039944B
HK1039944B HK02101237.9A HK02101237A HK1039944B HK 1039944 B HK1039944 B HK 1039944B HK 02101237 A HK02101237 A HK 02101237A HK 1039944 B HK1039944 B HK 1039944B
Authority
HK
Hong Kong
Prior art keywords
metal
metals
containing films
compounds
deposition
Prior art date
Application number
HK02101237.9A
Other languages
English (en)
Chinese (zh)
Other versions
HK1039944A1 (en
Inventor
Anthony Thomas Morman John
Allen Roberts David
Farnia Morteza
Original Assignee
氣體產品與化學公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 氣體產品與化學公司 filed Critical 氣體產品與化學公司
Publication of HK1039944A1 publication Critical patent/HK1039944A1/xx
Publication of HK1039944B publication Critical patent/HK1039944B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/02—Boron compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK02101237.9A 2000-04-03 2002-02-20 用以沉積金屬和含金屬的薄膜的揮發性前體 HK1039944B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19428500P 2000-04-03 2000-04-03
US09/791,409 US20020013487A1 (en) 2000-04-03 2001-02-22 Volatile precursors for deposition of metals and metal-containing films

Publications (2)

Publication Number Publication Date
HK1039944A1 HK1039944A1 (en) 2002-05-17
HK1039944B true HK1039944B (zh) 2005-08-05

Family

ID=26889867

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02101237.9A HK1039944B (zh) 2000-04-03 2002-02-20 用以沉積金屬和含金屬的薄膜的揮發性前體

Country Status (8)

Country Link
US (2) US20020013487A1 (ko)
EP (1) EP1142894B1 (ko)
JP (1) JP3593051B2 (ko)
KR (1) KR100436633B1 (ko)
AT (1) ATE286902T1 (ko)
DE (1) DE60108289T2 (ko)
HK (1) HK1039944B (ko)
TW (1) TW490502B (ko)

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Also Published As

Publication number Publication date
JP3593051B2 (ja) 2004-11-24
DE60108289T2 (de) 2005-06-02
EP1142894A2 (en) 2001-10-10
HK1039944A1 (en) 2002-05-17
EP1142894B1 (en) 2005-01-12
KR20010095246A (ko) 2001-11-03
EP1142894A3 (en) 2003-04-23
JP2002069088A (ja) 2002-03-08
US20030135061A1 (en) 2003-07-17
US6818783B2 (en) 2004-11-16
US20020013487A1 (en) 2002-01-31
DE60108289D1 (de) 2005-02-17
TW490502B (en) 2002-06-11
KR100436633B1 (ko) 2004-06-22
ATE286902T1 (de) 2005-01-15

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