HK1021761A1 - Nonvolatile writeable memory with program suspend command - Google Patents

Nonvolatile writeable memory with program suspend command

Info

Publication number
HK1021761A1
HK1021761A1 HK00100382A HK00100382A HK1021761A1 HK 1021761 A1 HK1021761 A1 HK 1021761A1 HK 00100382 A HK00100382 A HK 00100382A HK 00100382 A HK00100382 A HK 00100382A HK 1021761 A1 HK1021761 A1 HK 1021761A1
Authority
HK
Hong Kong
Prior art keywords
suspend command
writeable memory
program suspend
nonvolatile writeable
nonvolatile
Prior art date
Application number
HK00100382A
Other languages
English (en)
Inventor
David A Leak
Fasil G Bekele
Thomas C Price
Charles W Brown
Peter K Hazen
Vishram Prakash Dalvi
Rodney R Rozman
Christopher John Haid
Jerry Kreifels
Alan E Baker
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1021761A1 publication Critical patent/HK1021761A1/xx

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/20—Suspension of programming or erasing cells in an array in order to read other cells in it

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
HK00100382A 1996-09-20 2000-01-20 Nonvolatile writeable memory with program suspend command HK1021761A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/718,216 US6148360A (en) 1996-09-20 1996-09-20 Nonvolatile writeable memory with program suspend command
PCT/US1997/016765 WO1998012704A2 (fr) 1996-09-20 1997-09-18 Memoire non volatile enregistrable a fonction de suspension de programme

Publications (1)

Publication Number Publication Date
HK1021761A1 true HK1021761A1 (en) 2000-06-30

Family

ID=24885252

Family Applications (1)

Application Number Title Priority Date Filing Date
HK00100382A HK1021761A1 (en) 1996-09-20 2000-01-20 Nonvolatile writeable memory with program suspend command

Country Status (9)

Country Link
US (2) US6148360A (fr)
EP (1) EP0931289B1 (fr)
KR (1) KR100328426B1 (fr)
CN (1) CN1137440C (fr)
AU (1) AU4428997A (fr)
DE (1) DE69726304T2 (fr)
HK (1) HK1021761A1 (fr)
TW (1) TW365659B (fr)
WO (1) WO1998012704A2 (fr)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010011318A1 (en) 1997-02-27 2001-08-02 Vishram P. Dalvi Status indicators for flash memory
US6081870A (en) * 1997-11-06 2000-06-27 Micron Technology, Inc. Method and apparatus to achieve fast suspend in flash memories
KR100257868B1 (ko) * 1997-12-29 2000-06-01 윤종용 노어형 플래시 메모리 장치의 소거 방법
US6330638B1 (en) * 1998-09-18 2001-12-11 Agere Systems Guardian Corp. Synchronous audio DRAM storing audio and code data
CN100359601C (zh) * 1999-02-01 2008-01-02 株式会社日立制作所 半导体集成电路和非易失性存储器元件
EP1073063A1 (fr) * 1999-07-30 2001-01-31 STMicroelectronics S.r.l. Mémoire remanente avec la possibilité de lire en mode rafale et en mode de page pendant la suspension d'une opération de changement élecrique
US6407949B1 (en) 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
DE10015693A1 (de) * 2000-03-29 2001-10-18 Fujitsu Siemens Computers Gmbh Anordnung und Verfahren zur Reduzierung der Interruptverarbeitungszeit einer Datenverarbeitungseinrichtung
US7080205B2 (en) 2000-03-29 2006-07-18 Fujitsu Siemens Computer Gmbh Arrangement and method for reducing the processing time of a data processing device
US6418059B1 (en) 2000-06-26 2002-07-09 Intel Corporation Method and apparatus for non-volatile memory bit sequence program controller
WO2002067268A1 (fr) * 2001-02-20 2002-08-29 Micron Technology, Inc. Architecture de machine a etat fini d'instruction pour des instructions internes de memoire flash
ITMI20010342A1 (it) * 2001-02-20 2002-08-20 Micron Technology Inc Sistema di memoria non volatile per memorizzare valori di dati
WO2002073622A1 (fr) * 2001-03-09 2002-09-19 Thomson Licensing S.A. Dispositif electronique a memoire et procedes de commande d"un tel dispositif
US6879522B2 (en) * 2001-03-12 2005-04-12 Micron Technology, Inc. Method for making a memory device with plural substrates each having a memory array, a read only memory, and a write state machine
US7062616B2 (en) * 2001-06-12 2006-06-13 Intel Corporation Implementing a dual partition flash with suspend/resume capabilities
US8205009B2 (en) * 2002-04-25 2012-06-19 Emc Israel Development Center, Ltd. Apparatus for continuous compression of large volumes of data
KR100506061B1 (ko) * 2002-12-18 2005-08-03 주식회사 하이닉스반도체 특성 조정 장치를 부가한 메모리 장치
US6930925B2 (en) * 2003-10-14 2005-08-16 Atmel Corporation Suspend-resume programming method for flash memory
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
KR101051703B1 (ko) 2004-08-09 2011-07-25 삼성전자주식회사 서스펜드/리쥼 기능을 갖는 집적 회로 카드 및 집적 회로카드 시스템
US20060053247A1 (en) * 2004-09-08 2006-03-09 Hugo Cheung Incremental erasing of flash memory to improve system performance
ITMI20041904A1 (it) * 2004-10-07 2005-01-07 Atmel Corp "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile"
ITMI20050063A1 (it) * 2005-01-20 2006-07-21 Atmel Corp Metodo e sistema per la gestione di una richiesta di sospensione in una memoria flash
WO2006078744A2 (fr) * 2005-01-20 2006-07-27 Atmel Corporation Procede et systeme de gestion d'une demande d'interruption dans une memoire flash
KR100687424B1 (ko) * 2005-08-29 2007-02-26 주식회사 하이닉스반도체 비휘발성 메모리 장치
US7881123B2 (en) * 2005-09-23 2011-02-01 Macronix International Co., Ltd. Multi-operation mode nonvolatile memory
KR100673027B1 (ko) * 2006-01-31 2007-01-24 삼성전자주식회사 고온 스트레스로 인해 감소된 읽기 마진을 보상할 수 있는불 휘발성 메모리 장치
CN103258572B (zh) * 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
US8239735B2 (en) 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
KR101202537B1 (ko) 2006-05-12 2012-11-19 애플 인크. 메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩
WO2008026203A2 (fr) * 2006-08-27 2008-03-06 Anobit Technologies Estimation de distorsion non linéaire dans des dispositifs à mémoire
WO2008053472A2 (fr) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Lecture de cellules de mémoire à l'aide de seuils multiples
US7924648B2 (en) * 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8370562B2 (en) * 2007-02-25 2013-02-05 Sandisk Il Ltd. Interruptible cache flushing in flash memory systems
WO2008111058A2 (fr) 2007-03-12 2008-09-18 Anobit Technologies Ltd. Estimation adaptative de seuils de lecture de cellules mémoires
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8429493B2 (en) * 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) * 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
WO2009050703A2 (fr) 2007-10-19 2009-04-23 Anobit Technologies Stockage de données dans des groupes de cellules de mémoire analogique présentant des défaillances d'effacement
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
KR101509836B1 (ko) 2007-11-13 2015-04-06 애플 인크. 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
US8225181B2 (en) * 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) * 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) * 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
CN101630300B (zh) * 2009-05-18 2014-09-10 上海闻泰电子科技有限公司 一种利用sram总线扩展t卡的方法
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
KR20120082292A (ko) * 2011-01-13 2012-07-23 에스케이하이닉스 주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 동작 방법
US9076528B2 (en) * 2011-05-31 2015-07-07 Micron Technology, Inc. Apparatus including memory management control circuitry and related methods for allocation of a write block cluster
US9813080B1 (en) 2013-03-05 2017-11-07 Microsemi Solutions (U.S.), Inc. Layer specific LDPC decoder
US10230396B1 (en) 2013-03-05 2019-03-12 Microsemi Solutions (Us), Inc. Method and apparatus for layer-specific LDPC decoding
US9007841B1 (en) 2013-10-24 2015-04-14 Western Digital Technologies, Inc. Programming scheme for improved voltage distribution in solid-state memory
KR102226367B1 (ko) 2014-01-02 2021-03-12 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함하는 불휘발성 메모리 시스템
KR102187637B1 (ko) * 2014-02-03 2020-12-07 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법
US10290342B2 (en) * 2014-08-22 2019-05-14 Alacrity Semiconductors, Inc. Methods and apparatus for memory programming
US10332613B1 (en) 2015-05-18 2019-06-25 Microsemi Solutions (Us), Inc. Nonvolatile memory system with retention monitor
CN111857813A (zh) * 2015-05-18 2020-10-30 北京忆芯科技有限公司 调度微指令序列的方法及装置
US9799405B1 (en) 2015-07-29 2017-10-24 Ip Gem Group, Llc Nonvolatile memory system with read circuit for performing reads using threshold voltage shift read instruction
KR102312404B1 (ko) * 2015-09-07 2021-10-13 에스케이하이닉스 주식회사 저장 장치 및 이의 동작 방법
KR102314137B1 (ko) * 2015-11-04 2021-10-18 삼성전자 주식회사 리커버리 동작을 선택적으로 수행하는 불휘발성 메모리 장치 및 그 동작방법
US9886214B2 (en) 2015-12-11 2018-02-06 Ip Gem Group, Llc Nonvolatile memory system with erase suspend circuit and method for erase suspend management
US9892794B2 (en) 2016-01-04 2018-02-13 Ip Gem Group, Llc Method and apparatus with program suspend using test mode
US9899092B2 (en) 2016-01-27 2018-02-20 Ip Gem Group, Llc Nonvolatile memory system with program step manager and method for program step management
US10291263B2 (en) 2016-07-28 2019-05-14 Ip Gem Group, Llc Auto-learning log likelihood ratio
US10283215B2 (en) 2016-07-28 2019-05-07 Ip Gem Group, Llc Nonvolatile memory system with background reference positioning and local reference positioning
US10236915B2 (en) 2016-07-29 2019-03-19 Microsemi Solutions (U.S.), Inc. Variable T BCH encoding
KR102639697B1 (ko) 2017-01-09 2024-02-21 삼성전자주식회사 비휘발성 메모리 장치 및 그 프로그램 방법
KR102447465B1 (ko) 2017-09-08 2022-09-27 삼성전자주식회사 호스트로부터의 읽기 요청에 대한 짧은 읽기 응답 시간을 제공하기 위해 내부 동작을 일시적으로 중단하는 스토리지 장치
KR102420161B1 (ko) * 2017-12-01 2022-07-12 삼성전자주식회사 메모리 컨트롤러 및 그것의 제어 방법
CN111863096B (zh) * 2019-04-29 2022-08-30 北京兆易创新科技股份有限公司 一种NOR flash存储器读数据的方法和装置
KR20210012818A (ko) * 2019-07-26 2021-02-03 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
JP2021022414A (ja) * 2019-07-29 2021-02-18 キオクシア株式会社 半導体記憶装置
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
US11626163B2 (en) * 2021-09-02 2023-04-11 Micron Technology, Inc. Program voltage step based on program-suspend time

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318123A1 (de) * 1983-05-18 1984-11-22 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers
JPS61169941A (ja) * 1985-01-22 1986-07-31 Sony Corp 記憶装置
US5034922A (en) * 1987-12-21 1991-07-23 Motorola, Inc. Intelligent electrically erasable, programmable read-only memory with improved read latency
EP0376285B1 (fr) * 1988-12-27 1994-03-09 Nec Corporation Microcalculateur ayont une mémoire non volatile électriquement effaçable et programmable
JP2636449B2 (ja) * 1988-12-27 1997-07-30 日本電気株式会社 マイクロコンピュータ
US4965828A (en) * 1989-04-05 1990-10-23 Quadri Corporation Non-volatile semiconductor memory with SCRAM hold cycle prior to SCRAM-to-E2 PROM backup transfer
DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH04221496A (ja) * 1990-03-29 1992-08-11 Intel Corp 単一基板上に設けられるコンピュータメモリ回路およびコンピュータメモリを消去するためのシーケンスを終らせる方法
WO1992007317A1 (fr) * 1990-10-12 1992-04-30 Intel Corporation Regeneration lente de la memoire d'un ordinateur fonctionnant avec une alimentation en puissance limitee
JP3408552B2 (ja) * 1991-02-11 2003-05-19 インテル・コーポレーション 不揮発性半導体メモリをプログラム及び消去する回路とその方法
US5355464A (en) * 1991-02-11 1994-10-11 Intel Corporation Circuitry and method for suspending the automated erasure of a non-volatile semiconductor memory
US5255314A (en) * 1991-03-29 1993-10-19 At&T Bell Laboratories Switch adjunct integration arrangement
US5542076A (en) * 1991-06-14 1996-07-30 Digital Equipment Corporation Method and apparatus for adaptive interrupt servicing in data processing system
JP2816062B2 (ja) * 1992-10-05 1998-10-27 株式会社東芝 メモリセルの情報の消去方法
US5351216A (en) * 1993-03-05 1994-09-27 Microchip Technology Incorporated Premature termination of microcontroller EEPROM write
US5353256A (en) * 1993-06-30 1994-10-04 Intel Corporation Block specific status information in a memory device
US5509134A (en) * 1993-06-30 1996-04-16 Intel Corporation Method and apparatus for execution of operations in a flash memory array
US5424992A (en) * 1993-08-25 1995-06-13 Texas Instruments Incorporated, A Delaware Corporation Method and device for detecting and controlling an array source signal discharge for a memory erase operation
US5424993A (en) * 1993-11-15 1995-06-13 Micron Technology, Inc. Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device
JPH07153286A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体不揮発性記憶装置
JPH07226097A (ja) * 1994-02-15 1995-08-22 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5742787A (en) * 1995-04-10 1998-04-21 Intel Corporation Hardware reset of a write state machine for flash memory
US5568644A (en) * 1995-05-05 1996-10-22 Apple Computer, Inc. Method and apparatus using a tree structure for the dispatching of interrupts
JPH09114678A (ja) * 1995-10-17 1997-05-02 Sanyo Electric Co Ltd マイクロコンピュータの割り込み処理装置
US5805929A (en) * 1996-01-29 1998-09-08 International Business Machines Corporation Multiple independent I/O functions on a PCMCIA card share a single interrupt request signal using an AND gate for triggering a delayed RESET signal
JPH09231065A (ja) * 1996-02-21 1997-09-05 Matsushita Electric Ind Co Ltd プログラム変更可能な電子制御装置
US5687121A (en) * 1996-03-29 1997-11-11 Aplus Integrated Circuits, Inc. Flash EEPROM worldline decoder

Also Published As

Publication number Publication date
AU4428997A (en) 1998-04-14
TW365659B (en) 1999-08-01
EP0931289A2 (fr) 1999-07-28
EP0931289A4 (fr) 2000-10-04
CN1238049A (zh) 1999-12-08
CN1137440C (zh) 2004-02-04
WO1998012704A2 (fr) 1998-03-26
DE69726304D1 (de) 2003-12-24
KR100328426B1 (ko) 2002-03-16
US5937424A (en) 1999-08-10
EP0931289B1 (fr) 2003-11-19
DE69726304T2 (de) 2004-04-22
KR20000036243A (ko) 2000-06-26
WO1998012704A3 (fr) 1998-06-04
US6148360A (en) 2000-11-14

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