HK1003911A1 - High speed, low voltage non-volatile memory - Google Patents

High speed, low voltage non-volatile memory

Info

Publication number
HK1003911A1
HK1003911A1 HK98103090A HK98103090A HK1003911A1 HK 1003911 A1 HK1003911 A1 HK 1003911A1 HK 98103090 A HK98103090 A HK 98103090A HK 98103090 A HK98103090 A HK 98103090A HK 1003911 A1 HK1003911 A1 HK 1003911A1
Authority
HK
Hong Kong
Prior art keywords
high speed
volatile memory
low voltage
voltage non
volatile
Prior art date
Application number
HK98103090A
Other languages
English (en)
Inventor
Mehdi Jazayeri
Edward S Hui
George J Korsh
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of HK1003911A1 publication Critical patent/HK1003911A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
HK98103090A 1995-08-04 1998-04-15 High speed, low voltage non-volatile memory HK1003911A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/511,311 US5587951A (en) 1995-08-04 1995-08-04 High speed, low voltage non-volatile memory
PCT/US1996/011926 WO1997006533A1 (en) 1995-08-04 1996-07-19 High speed, low voltage non-volatile memory

Publications (1)

Publication Number Publication Date
HK1003911A1 true HK1003911A1 (en) 1998-11-13

Family

ID=24034353

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98103090A HK1003911A1 (en) 1995-08-04 1998-04-15 High speed, low voltage non-volatile memory

Country Status (9)

Country Link
US (1) US5587951A (zh)
EP (2) EP0784852B1 (zh)
JP (1) JPH10507296A (zh)
KR (1) KR100429064B1 (zh)
CN (2) CN100349230C (zh)
DE (1) DE69624216T2 (zh)
HK (1) HK1003911A1 (zh)
TW (1) TW311226B (zh)
WO (1) WO1997006533A1 (zh)

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US5721704A (en) * 1996-08-23 1998-02-24 Motorola, Inc. Control gate driver circuit for a non-volatile memory and memory using same
TW337607B (en) 1997-08-06 1998-08-01 Mos Electronics Taiwan Inc Process for forming a contact hole in an EEPROM with NOR construction
US6040216A (en) * 1997-08-11 2000-03-21 Mosel Vitelic, Inc. Method (and device) for producing tunnel silicon oxynitride layer
US5889714A (en) * 1997-11-03 1999-03-30 Digital Equipment Corporation Adaptive precharge management for synchronous DRAM
TW425660B (en) * 1997-12-12 2001-03-11 Mosel Vitelic Inc Method of forming uniform dielectric layer between two conductive layers in integrated circuit
TW374939B (en) 1997-12-19 1999-11-21 Promos Technologies Inc Method of formation of 2 gate oxide layers of different thickness in an IC
TW382801B (en) 1998-02-25 2000-02-21 Mosel Vitelic Inc Method of forming two transistors having different threshold voltage in integrated circuit
TW480713B (en) * 1998-03-03 2002-03-21 Mosel Vitelic Inc Method for forming different thickness of field oxide in integrated circuit and the structure of the same
US6136653A (en) * 1998-05-11 2000-10-24 Mosel Vitelic, Inc. Method and device for producing undercut gate for flash memory
US6261903B1 (en) 1998-05-14 2001-07-17 Mosel Vitelic, Inc. Floating gate method and device
US6365455B1 (en) 1998-06-05 2002-04-02 Mosel Vitelic, Inc. Flash memory process using polysilicon spacers
KR100507370B1 (ko) * 1998-06-11 2007-11-12 주식회사 하이닉스반도체 워드라인 부트스트랩 회로
US6052304A (en) * 1998-06-18 2000-04-18 Lsi Logic Corporation Non-volatile storage element and method for manufacturing using standard processing
US6166982A (en) * 1998-06-25 2000-12-26 Cypress Semiconductor Corp. High voltage switch for eeprom/flash memories
US6134146A (en) * 1998-10-05 2000-10-17 Advanced Micro Devices Wordline driver for flash electrically erasable programmable read-only memory (EEPROM)
US6134141A (en) * 1998-12-31 2000-10-17 Sandisk Corporation Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories
FR2799043B1 (fr) 1999-09-29 2001-12-14 St Microelectronics Sa Registre de colonnes, memoire l'incorporant, et procede d'ecriture dans une telle memoire
US6269026B1 (en) * 2000-02-29 2001-07-31 Advanced Micro Devices, Inc. Charge sharing to help boost the wordlines during APDE verify
US6507523B2 (en) * 2000-12-20 2003-01-14 Micron Technology, Inc. Non-volatile memory with power standby
US6606271B2 (en) 2001-05-23 2003-08-12 Mircron Technology, Inc. Circuit having a controllable slew rate
KR100425160B1 (ko) * 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
US6809960B2 (en) * 2002-08-26 2004-10-26 Micron Technology, Inc. High speed low voltage driver
US7170706B2 (en) * 2002-08-29 2007-01-30 Freescale Semiconductor, Inc. Hard disk system with non-volatile IC based memory for storing data
US7096378B2 (en) * 2002-08-29 2006-08-22 Freescale Semiconductor, Inc. Data storage system having a non-volatile IC based memory for storing user data
US7006318B2 (en) 2002-08-29 2006-02-28 Freescale Semiconductor, Inc. Removable media storage system with memory for storing operational data
US7423911B2 (en) 2005-09-29 2008-09-09 Hynix Semiconductor Inc. Bit line control circuit for semiconductor memory device
CN100446125C (zh) * 2006-08-24 2008-12-24 华为技术有限公司 非易失性高速存储单元
KR100780773B1 (ko) * 2006-11-03 2007-11-30 주식회사 하이닉스반도체 플래시 메모리소자의 프로그램 시작 바이어스 설정방법 및이를 이용한 프로그램 방법
KR100943116B1 (ko) * 2008-03-14 2010-02-18 주식회사 하이닉스반도체 불휘발성 메모리 소자의 동작 방법
FR2988513B1 (fr) * 2012-03-23 2014-11-21 Soitec Silicon On Insulator Cellule eprom
TWI548203B (zh) * 2014-01-08 2016-09-01 新唐科技股份有限公司 電壓產生器以及振盪裝置與操作方法
CN105097031A (zh) * 2014-05-21 2015-11-25 中芯国际集成电路制造(上海)有限公司 非易失性存储器的数据读取方法、电路及非易失性存储器
US10163917B2 (en) 2016-11-01 2018-12-25 Micron Technology, Inc. Cell disturb prevention using a leaker device to reduce excess charge from an electronic device
KR101908792B1 (ko) 2016-11-29 2018-10-17 건국대학교 산학협력단 다층식 비료 회수장치 및 비료 회수방법
US10535412B2 (en) 2018-02-09 2020-01-14 Sandisk Technologies Llc Single pulse verification of memory cells
CN113168854B (zh) * 2018-12-04 2024-08-20 美光科技公司 多模式电压泵和控制其的方法
US10539973B1 (en) * 2018-12-17 2020-01-21 Micron Technology, Inc. Low-voltage bias generator based on high-voltage supply
CN112349320B (zh) * 2019-08-06 2024-08-23 长鑫存储技术有限公司 字线驱动电路及存储单元
CN113129976B (zh) * 2021-06-17 2021-09-03 中天弘宇集成电路有限责任公司 行译码电路及存储器
US12094517B2 (en) 2022-11-28 2024-09-17 Nanya Technology Corporation Word line pump device of dynamic random access memory chip and clamp circuit thereof

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US5226013A (en) * 1987-12-01 1993-07-06 Sgs-Thomson Microelectronics S.R.L. Bias and precharging circuit for use in reading EPROM cells
JPH0777345B2 (ja) * 1988-11-04 1995-08-16 三菱電機株式会社 半導体装置
US5168466A (en) * 1991-03-04 1992-12-01 Motorola, Inc. Bias current generator circuit for a sense amplifier
JP3118472B2 (ja) * 1991-08-09 2000-12-18 富士通株式会社 出力回路
JP2812039B2 (ja) * 1992-02-28 1998-10-15 日本電気株式会社 電気的に書込み・消去可能な不揮発性半導体記憶装置
JP2803466B2 (ja) * 1992-04-28 1998-09-24 日本電気株式会社 半導体記憶装置の救済方法
US5300828A (en) * 1992-08-31 1994-04-05 Sgs-Thomson Microelectronics, Inc. Slew rate limited output buffer with bypass circuitry
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
US5331295A (en) * 1993-02-03 1994-07-19 National Semiconductor Corporation Voltage controlled oscillator with efficient process compensation
US5367206A (en) * 1993-06-17 1994-11-22 Advanced Micro Devices, Inc. Output buffer circuit for a low voltage EPROM
JP3178946B2 (ja) * 1993-08-31 2001-06-25 沖電気工業株式会社 半導体記憶装置及びその駆動方法
US5511026A (en) * 1993-12-01 1996-04-23 Advanced Micro Devices, Inc. Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories
US5528541A (en) * 1994-11-09 1996-06-18 Sony Corporation Of Japan Charge shared precharge scheme to reduce compare output delays
EP0717501A1 (en) * 1994-12-15 1996-06-19 Advanced Micro Devices, Inc. Programmable drive buffer

Also Published As

Publication number Publication date
WO1997006533A1 (en) 1997-02-20
DE69624216T2 (de) 2003-06-12
US5587951A (en) 1996-12-24
CN100349230C (zh) 2007-11-14
KR970706580A (ko) 1997-11-03
EP0784852A4 (en) 1999-09-01
KR100429064B1 (ko) 2004-07-15
TW311226B (zh) 1997-07-21
CN1479317A (zh) 2004-03-03
DE69624216D1 (de) 2002-11-14
EP0784852A1 (en) 1997-07-23
EP0784852B1 (en) 2002-10-09
EP1189235A1 (en) 2002-03-20
JPH10507296A (ja) 1998-07-14
CN1164926A (zh) 1997-11-12
CN1129912C (zh) 2003-12-03

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100719