FR2988513B1 - Cellule eprom - Google Patents

Cellule eprom

Info

Publication number
FR2988513B1
FR2988513B1 FR1252601A FR1252601A FR2988513B1 FR 2988513 B1 FR2988513 B1 FR 2988513B1 FR 1252601 A FR1252601 A FR 1252601A FR 1252601 A FR1252601 A FR 1252601A FR 2988513 B1 FR2988513 B1 FR 2988513B1
Authority
FR
France
Prior art keywords
eprom cell
eprom
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1252601A
Other languages
English (en)
Other versions
FR2988513A1 (fr
Inventor
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1252601A priority Critical patent/FR2988513B1/fr
Priority to US14/385,436 priority patent/US9230662B2/en
Priority to PCT/EP2013/052668 priority patent/WO2013139527A1/fr
Priority to CN201380015607.0A priority patent/CN104246893B/zh
Priority to KR1020147028352A priority patent/KR102057708B1/ko
Priority to TW102106090A priority patent/TWI574271B/zh
Publication of FR2988513A1 publication Critical patent/FR2988513A1/fr
Application granted granted Critical
Publication of FR2988513B1 publication Critical patent/FR2988513B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/045—Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories
FR1252601A 2012-03-23 2012-03-23 Cellule eprom Active FR2988513B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1252601A FR2988513B1 (fr) 2012-03-23 2012-03-23 Cellule eprom
US14/385,436 US9230662B2 (en) 2012-03-23 2013-02-11 Eprom cell
PCT/EP2013/052668 WO2013139527A1 (fr) 2012-03-23 2013-02-11 Cellule eprom
CN201380015607.0A CN104246893B (zh) 2012-03-23 2013-02-11 Eprom单元
KR1020147028352A KR102057708B1 (ko) 2012-03-23 2013-02-11 이피롬 셀
TW102106090A TWI574271B (zh) 2012-03-23 2013-02-21 Ｅｐｒｏｍ單元

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1252601A FR2988513B1 (fr) 2012-03-23 2012-03-23 Cellule eprom

Publications (2)

Publication Number Publication Date
FR2988513A1 FR2988513A1 (fr) 2013-09-27
FR2988513B1 true FR2988513B1 (fr) 2014-11-21

Family

ID=47716020

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1252601A Active FR2988513B1 (fr) 2012-03-23 2012-03-23 Cellule eprom

Country Status (6)

Country Link
US (1) US9230662B2 (fr)
KR (1) KR102057708B1 (fr)
CN (1) CN104246893B (fr)
FR (1) FR2988513B1 (fr)
TW (1) TWI574271B (fr)
WO (1) WO2013139527A1 (fr)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87682C (fr) 1953-12-21
FR1252002A (fr) 1954-10-05 1961-01-27 Plate-forme basculante pour voitures automobiles
US5128895A (en) * 1989-11-21 1992-07-07 Intel Corporation Method for programming a virtual ground EPROM cell including slow ramping of the column line voltage
US5319593A (en) * 1992-12-21 1994-06-07 National Semiconductor Corp. Memory array with field oxide islands eliminated and method
US5587951A (en) * 1995-08-04 1996-12-24 Atmel Corporation High speed, low voltage non-volatile memory
US5687121A (en) 1996-03-29 1997-11-11 Aplus Integrated Circuits, Inc. Flash EEPROM worldline decoder
US6002610A (en) * 1998-04-30 1999-12-14 Lucent Technologies Inc. Non-volatile memory element for programmable logic applications and operational methods therefor
US6166955A (en) * 1999-07-09 2000-12-26 Macronix International Co., Ltd. Apparatus and method for programming of flash EPROM memory
US8000131B2 (en) * 2009-04-29 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Non-volatile field programmable gate array
FR2953641B1 (fr) 2009-12-08 2012-02-10 S O I Tec Silicon On Insulator Tech Circuit de transistors homogenes sur seoi avec grille de controle arriere enterree sous la couche isolante
JP5092001B2 (ja) 2010-09-29 2012-12-05 株式会社東芝 半導体集積回路
FR2987709B1 (fr) 2012-03-05 2017-04-28 Soitec Silicon On Insulator Table de correspondance
FR2987710B1 (fr) 2012-03-05 2017-04-28 Soitec Silicon On Insulator Architecture de table de correspondance

Also Published As

Publication number Publication date
CN104246893B (zh) 2017-04-12
US9230662B2 (en) 2016-01-05
KR102057708B1 (ko) 2019-12-19
TWI574271B (zh) 2017-03-11
US20150042381A1 (en) 2015-02-12
TW201342382A (zh) 2013-10-16
FR2988513A1 (fr) 2013-09-27
WO2013139527A1 (fr) 2013-09-26
CN104246893A (zh) 2014-12-24
KR20140136984A (ko) 2014-12-01

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