GB9930217D0 - Solutiion processed transistors - Google Patents

Solutiion processed transistors

Info

Publication number
GB9930217D0
GB9930217D0 GBGB9930217.6A GB9930217A GB9930217D0 GB 9930217 D0 GB9930217 D0 GB 9930217D0 GB 9930217 A GB9930217 A GB 9930217A GB 9930217 D0 GB9930217 D0 GB 9930217D0
Authority
GB
United Kingdom
Prior art keywords
solutiion
processed transistors
transistors
processed
solutiion processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9930217.6A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge University Technical Services Ltd CUTS
University of Cambridge
Original Assignee
Cambridge University Technical Services Ltd CUTS
University of Cambridge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge University Technical Services Ltd CUTS, University of Cambridge filed Critical Cambridge University Technical Services Ltd CUTS
Priority to GBGB9930217.6A priority Critical patent/GB9930217D0/en
Publication of GB9930217D0 publication Critical patent/GB9930217D0/en
Priority to GBGB0009911.9A priority patent/GB0009911D0/en
Priority to GBGB0009917.6A priority patent/GB0009917D0/en
Priority to GBGB0009913.5A priority patent/GB0009913D0/en
Priority to GBGB0009915.0A priority patent/GB0009915D0/en
Priority to CA002394881A priority patent/CA2394881A1/en
Priority to EP00983402.9A priority patent/EP1243032B1/en
Priority to CA2394886A priority patent/CA2394886C/en
Priority to AU22069/01A priority patent/AU779878B2/en
Priority to PCT/GB2000/004934 priority patent/WO2001047043A1/en
Priority to JP2001547677A priority patent/JP2003518754A/ja
Priority to CNB008185891A priority patent/CN1245769C/zh
Priority to AU22066/01A priority patent/AU781584B2/en
Priority to PCT/GB2000/004942 priority patent/WO2001047045A1/en
Priority to EP00985667.5A priority patent/EP1243035B1/en
Priority to BRPI0016660A priority patent/BRPI0016660B1/pt
Priority to JP2001547679A priority patent/JP5014547B2/ja
Priority to CNB008185905A priority patent/CN100379048C/zh
Priority to PCT/GB2000/004940 priority patent/WO2001047044A2/en
Priority to AU20160/01A priority patent/AU781789B2/en
Priority to CA2829416A priority patent/CA2829416C/en
Priority to PCT/GB2000/004938 priority patent/WO2001046987A2/en
Priority to AU20159/01A priority patent/AU2015901A/en
Priority to JP2001547423A priority patent/JP5060695B2/ja
Priority to EP00985664A priority patent/EP1243034A1/en
Priority to CNB008185913A priority patent/CN100375310C/zh
Priority to BR0016660-0A priority patent/BR0016660A/pt
Priority to JP2001547678A priority patent/JP5073141B2/ja
Priority to BRPI0016643-0A priority patent/BRPI0016643B1/pt
Priority to KR1020027008129A priority patent/KR100872154B1/ko
Priority to CNB008185808A priority patent/CN100483774C/zh
Priority to KR1020027008126A priority patent/KR100927890B1/ko
Priority to BR0016643-0A priority patent/BR0016643A/pt
Priority to BRPI0016670A priority patent/BRPI0016670B1/pt
Priority to EP00983403.7A priority patent/EP1243033B1/en
Priority to BRPI0016661-8B1A priority patent/BR0016661B1/pt
Priority to CA2395004A priority patent/CA2395004C/en
Priority to CA2394895A priority patent/CA2394895C/en
Priority to BR0016670-7A priority patent/BR0016670A/pt
Priority to KR1020027008128A priority patent/KR100909481B1/ko
Priority to KR1020077010832A priority patent/KR100940110B1/ko
Priority to US10/175,909 priority patent/US6808972B2/en
Priority to US10/175,954 priority patent/US7176040B2/en
Priority to US10/176,007 priority patent/US6905906B2/en
Priority to US10/176,173 priority patent/US7098061B2/en
Priority to HK03105169.1A priority patent/HK1053011B/zh
Priority to HK03105168.2A priority patent/HK1054816B/zh
Priority to HK03105170.8A priority patent/HK1053012B/zh
Priority to HK03105171.7A priority patent/HK1053013B/zh
Priority to US10/901,172 priority patent/US7572651B2/en
Priority to US11/135,278 priority patent/US7635857B2/en
Priority to US11/467,687 priority patent/US7763501B2/en
Priority to JP2013098405A priority patent/JP5658789B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ink Jet (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
GBGB9930217.6A 1999-12-21 1999-12-21 Solutiion processed transistors Ceased GB9930217D0 (en)

Priority Applications (53)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009911.9A GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
GBGB0009917.6A GB0009917D0 (en) 1999-12-21 2000-04-20 Forming interconnects
GBGB0009913.5A GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing
CA002394881A CA2394881A1 (en) 1999-12-21 2000-12-21 Solution processed devices
EP00983402.9A EP1243032B1 (en) 1999-12-21 2000-12-21 Inkjet-fabricated integrated circuits
CA2394886A CA2394886C (en) 1999-12-21 2000-12-21 Inkjet-fabricated integrated circuits
AU22069/01A AU779878B2 (en) 1999-12-21 2000-12-21 Forming interconnects
PCT/GB2000/004934 WO2001047043A1 (en) 1999-12-21 2000-12-21 Solution processed devices
JP2001547677A JP2003518754A (ja) 1999-12-21 2000-12-21 溶液処理された素子
CNB008185891A CN1245769C (zh) 1999-12-21 2000-12-21 溶液加工
AU22066/01A AU781584B2 (en) 1999-12-21 2000-12-21 Solution processed devices
PCT/GB2000/004942 WO2001047045A1 (en) 1999-12-21 2000-12-21 Solution processing
EP00985667.5A EP1243035B1 (en) 1999-12-21 2000-12-21 Forming interconnects
BRPI0016660A BRPI0016660B1 (pt) 1999-12-21 2000-12-21 método para formar um transistor, o qual inclui uma camada semicondutora não polar e uma camada porta dielétrica polar
JP2001547679A JP5014547B2 (ja) 1999-12-21 2000-12-21 電子スイッチング素子またはトランジスタの電極を基板上に形成する方法
CNB008185905A CN100379048C (zh) 1999-12-21 2000-12-21 形成互连
PCT/GB2000/004940 WO2001047044A2 (en) 1999-12-21 2000-12-21 Forming interconnects
AU20160/01A AU781789B2 (en) 1999-12-21 2000-12-21 Solution processing
CA2829416A CA2829416C (en) 1999-12-21 2000-12-21 Solution processed devices
PCT/GB2000/004938 WO2001046987A2 (en) 1999-12-21 2000-12-21 Inkjet-fabricated integrated circuits
AU20159/01A AU2015901A (en) 1999-12-21 2000-12-21 Inkjet-fabricated integrated circuits
JP2001547423A JP5060695B2 (ja) 1999-12-21 2000-12-21 電子素子配列から電子回路を構成する方法および該方法により形成される電子回路
EP00985664A EP1243034A1 (en) 1999-12-21 2000-12-21 Solution processed devices
CNB008185913A CN100375310C (zh) 1999-12-21 2000-12-21 喷墨制作的集成电路
BR0016660-0A BR0016660A (pt) 1999-12-21 2000-12-21 Método para formar um transistor, transistor, e circuito lógico e dispositivo de exibição ou de memória
JP2001547678A JP5073141B2 (ja) 1999-12-21 2000-12-21 内部接続の形成方法
BRPI0016643-0A BRPI0016643B1 (pt) 1999-12-21 2000-12-21 Método para formar sobre um substrato um dispositivo eletrônico, e, circuito lógico, dispositivo de exibição ou memória
KR1020027008129A KR100872154B1 (ko) 1999-12-21 2000-12-21 용액 처리 공정
CNB008185808A CN100483774C (zh) 1999-12-21 2000-12-21 半导体器件及其形成方法
KR1020027008126A KR100927890B1 (ko) 1999-12-21 2000-12-21 용액 처리 디바이스
BR0016643-0A BR0016643A (pt) 1999-12-21 2000-12-21 Método para formar sobre um substrativo um dispositivo eletrônico, e, circuito lógico e dispositivo de exibição ou de memória.
BRPI0016670A BRPI0016670B1 (pt) 1999-12-21 2000-12-21 método para configuração de um circuito eletrônico, e, circuito eletrônico
EP00983403.7A EP1243033B1 (en) 1999-12-21 2000-12-21 Solution processing
BRPI0016661-8B1A BR0016661B1 (pt) 1999-12-21 2000-12-21 Métodos para formação de um dispositivo eletrônico, dispositivo eletrônico e dispositivo de exibição
CA2395004A CA2395004C (en) 1999-12-21 2000-12-21 Solution processing
CA2394895A CA2394895C (en) 1999-12-21 2000-12-21 Forming interconnects
BR0016670-7A BR0016670A (pt) 1999-12-21 2000-12-21 Métodos para formar um circuito integrado e para definir um circuito eletrônico, e, dispositivo eletrônico
KR1020027008128A KR100909481B1 (ko) 1999-12-21 2000-12-21 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법
KR1020077010832A KR100940110B1 (ko) 1999-12-21 2000-12-21 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법
US10/175,909 US6808972B2 (en) 1999-12-21 2002-06-21 Method of processing solution on a substrate
US10/175,954 US7176040B2 (en) 1999-12-21 2002-06-21 Inkjet-fabricated integrated circuits
US10/176,007 US6905906B2 (en) 1999-12-21 2002-06-21 Solution processed devices
US10/176,173 US7098061B2 (en) 1999-12-21 2002-06-21 Forming interconnects using locally deposited solvents
HK03105169.1A HK1053011B (zh) 1999-12-21 2003-07-17 形成互連
HK03105168.2A HK1054816B (zh) 1999-12-21 2003-07-17 溶液加工
HK03105170.8A HK1053012B (zh) 1999-12-21 2003-07-17 半導體器件及其形成方法
HK03105171.7A HK1053013B (zh) 1999-12-21 2003-07-17 噴墨製作的集成電路
US10/901,172 US7572651B2 (en) 1999-12-21 2004-07-29 Inkjet-fabricated integrated circuits
US11/135,278 US7635857B2 (en) 1999-12-21 2005-05-24 Transistor having soluble layers
US11/467,687 US7763501B2 (en) 1999-12-21 2006-08-28 Forming interconnects
JP2013098405A JP5658789B2 (ja) 1999-12-21 2013-05-08 溶液処理された素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors

Publications (1)

Publication Number Publication Date
GB9930217D0 true GB9930217D0 (en) 2000-02-09

Family

ID=10866760

Family Applications (5)

Application Number Title Priority Date Filing Date
GBGB9930217.6A Ceased GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009917.6A Ceased GB0009917D0 (en) 1999-12-21 2000-04-20 Forming interconnects
GBGB0009911.9A Ceased GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
GBGB0009913.5A Ceased GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A Ceased GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing

Family Applications After (4)

Application Number Title Priority Date Filing Date
GBGB0009917.6A Ceased GB0009917D0 (en) 1999-12-21 2000-04-20 Forming interconnects
GBGB0009911.9A Ceased GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
GBGB0009913.5A Ceased GB0009913D0 (en) 1999-12-21 2000-04-20 Integrated circuits
GBGB0009915.0A Ceased GB0009915D0 (en) 1999-12-21 2000-04-20 Solution processing

Country Status (6)

Country Link
JP (2) JP5014547B2 (ja)
KR (3) KR100909481B1 (ja)
BR (3) BRPI0016670B1 (ja)
CA (1) CA2829416C (ja)
GB (5) GB9930217D0 (ja)
HK (3) HK1053012B (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4906934B2 (ja) * 2003-06-02 2012-03-28 株式会社リコー 電子素子、電子素子アレイ及び表示装置
JP4629997B2 (ja) * 2003-06-02 2011-02-09 株式会社リコー 薄膜トランジスタ及び薄膜トランジスタアレイ
JP4666999B2 (ja) * 2003-10-28 2011-04-06 株式会社半導体エネルギー研究所 配線及び薄膜トランジスタの作製方法
US7968461B2 (en) 2003-10-28 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method
JP4713192B2 (ja) * 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4665545B2 (ja) * 2005-02-24 2011-04-06 凸版印刷株式会社 薄膜トランジスタの製造方法
JP2006261535A (ja) * 2005-03-18 2006-09-28 Ricoh Co Ltd 積層構造体、積層構造体を用いた電子素子、電子素子を用いた電子素子アレイ、積層構造体の製造方法および電子素子の製造方法
JP4556838B2 (ja) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 バンクの形成方法および膜パターンの形成方法
KR100696555B1 (ko) * 2006-02-28 2007-03-19 삼성에스디아이 주식회사 유기 박막 트랜지스터의 제조방법, 이로부터 제조된 유기박막 트랜지스터 및 상기 유기 박막 트랜지스터를 구비한평판 표시 장치
KR100792407B1 (ko) * 2006-10-10 2008-01-08 고려대학교 산학협력단 플렉시블 기판 상에 나노 입자를 이용한 전면 게이트 박막트랜지스터 및 그 제조 방법
JP4415977B2 (ja) 2006-07-14 2010-02-17 セイコーエプソン株式会社 半導体装置の製造方法、及び転写用の基板
JP4096985B2 (ja) 2006-07-14 2008-06-04 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、及び電気光学装置
KR100777741B1 (ko) * 2006-07-19 2007-11-19 삼성에스디아이 주식회사 유기 박막 트랜지스터의 제조 방법 및 상기 방법으로제조된 유기 박막 트랜지스터를 구비한 평판 표시 장치
KR100792036B1 (ko) * 2006-10-17 2008-01-04 한양대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
US8637343B2 (en) * 2007-04-25 2014-01-28 Merck Patent Gmbh Process for preparing an electronic device
JP2009105258A (ja) * 2007-10-24 2009-05-14 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
KR101678670B1 (ko) * 2010-01-22 2016-12-07 삼성전자주식회사 박막트랜지스터 및 어레이 박막트랜지스터의 제조방법
JP2011216647A (ja) 2010-03-31 2011-10-27 Dainippon Printing Co Ltd パターン形成体の製造方法、機能性素子の製造方法および半導体素子の製造方法
JP5866783B2 (ja) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 回路基板の製造方法
JP6531319B2 (ja) * 2016-05-16 2019-06-19 株式会社Ｎｓｃ 表示装置製造方法
JP6804082B2 (ja) * 2016-09-21 2020-12-23 国立研究開発法人物質・材料研究機構 有機トランジスタとその動作制御方法および動作制御装置
CN106953029B (zh) * 2017-03-22 2019-08-02 京东方科技集团股份有限公司 一种薄膜封装方法及封装薄膜、喷墨打印设备
JP7030352B2 (ja) * 2020-10-13 2022-03-07 国立研究開発法人物質・材料研究機構 有機トランジスタおよび有機トランジスタの動作制御装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
JP2507153B2 (ja) 1990-07-31 1996-06-12 松下電器産業株式会社 有機デバイスとその製造方法
JP3941169B2 (ja) * 1997-07-16 2007-07-04 セイコーエプソン株式会社 有機ｅｌ素子の製造方法
WO1999010939A2 (en) * 1997-08-22 1999-03-04 Koninklijke Philips Electronics N.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
DE69840914D1 (de) * 1997-10-14 2009-07-30 Patterning Technologies Ltd Methode zur Herstellung eines elektrischen Kondensators
JP2001521269A (ja) 1997-10-17 2001-11-06 ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニア インクジェット印刷技術を使って有機半導体装置を製造する方法、およびこれを利用した装置およびシステム
KR100608543B1 (ko) * 1998-03-17 2006-08-03 세이코 엡슨 가부시키가이샤 표시장치의 제조방법 및 박막발광소자의 제조방법
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
BR0011888A (pt) * 1999-06-21 2004-03-09 Univ Cambridge Tech Processo para formar um dispositivo eletrônico, dispositivo eletrônico, circuito lógico, visor de matriz ativa, e, transistor de polímero

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BRPI0016643B1 (pt) 2018-04-03
JP5014547B2 (ja) 2012-08-29
KR100872154B1 (ko) 2008-12-08
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GB0009913D0 (en) 2000-06-07
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