HK1053012B - 半導體器件及其形成方法 - Google Patents

半導體器件及其形成方法

Info

Publication number
HK1053012B
HK1053012B HK03105170.8A HK03105170A HK1053012B HK 1053012 B HK1053012 B HK 1053012B HK 03105170 A HK03105170 A HK 03105170A HK 1053012 B HK1053012 B HK 1053012B
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
forming method
forming
semiconductor
Prior art date
Application number
HK03105170.8A
Other languages
English (en)
Chinese (zh)
Other versions
HK1053012A1 (en
Inventor
翰寧‧瑟林浩斯
理查德‧H‧費萊恩德
塔克‧卡瓦斯
Original Assignee
弗萊克因艾伯勒有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/GB2000/004934 external-priority patent/WO2001047043A1/en
Application filed by 弗萊克因艾伯勒有限公司 filed Critical 弗萊克因艾伯勒有限公司
Publication of HK1053012A1 publication Critical patent/HK1053012A1/xx
Publication of HK1053012B publication Critical patent/HK1053012B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Ink Jet (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Electrodes Of Semiconductors (AREA)
HK03105170.8A 1999-12-21 2003-07-17 半導體器件及其形成方法 HK1053012B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9930217.6A GB9930217D0 (en) 1999-12-21 1999-12-21 Solutiion processed transistors
GBGB0009911.9A GB0009911D0 (en) 1999-12-21 2000-04-20 Solution processed devices
PCT/GB2000/004934 WO2001047043A1 (en) 1999-12-21 2000-12-21 Solution processed devices

Publications (2)

Publication Number Publication Date
HK1053012A1 HK1053012A1 (en) 2003-10-03
HK1053012B true HK1053012B (zh) 2010-01-15

Family

ID=10866760

Family Applications (3)

Application Number Title Priority Date Filing Date
HK03105169.1A HK1053011B (zh) 1999-12-21 2003-07-17 形成互連
HK03105171.7A HK1053013B (zh) 1999-12-21 2003-07-17 噴墨製作的集成電路
HK03105170.8A HK1053012B (zh) 1999-12-21 2003-07-17 半導體器件及其形成方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
HK03105169.1A HK1053011B (zh) 1999-12-21 2003-07-17 形成互連
HK03105171.7A HK1053013B (zh) 1999-12-21 2003-07-17 噴墨製作的集成電路

Country Status (6)

Country Link
JP (2) JP5014547B2 (ja)
KR (3) KR100927890B1 (ja)
BR (3) BRPI0016660B1 (ja)
CA (1) CA2829416C (ja)
GB (5) GB9930217D0 (ja)
HK (3) HK1053011B (ja)

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JP4906934B2 (ja) * 2003-06-02 2012-03-28 株式会社リコー 電子素子、電子素子アレイ及び表示装置
JP4629997B2 (ja) * 2003-06-02 2011-02-09 株式会社リコー 薄膜トランジスタ及び薄膜トランジスタアレイ
US7968461B2 (en) 2003-10-28 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method
JP4666999B2 (ja) * 2003-10-28 2011-04-06 株式会社半導体エネルギー研究所 配線及び薄膜トランジスタの作製方法
JP4713192B2 (ja) * 2004-03-25 2011-06-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4665545B2 (ja) * 2005-02-24 2011-04-06 凸版印刷株式会社 薄膜トランジスタの製造方法
JP2006261535A (ja) * 2005-03-18 2006-09-28 Ricoh Co Ltd 積層構造体、積層構造体を用いた電子素子、電子素子を用いた電子素子アレイ、積層構造体の製造方法および電子素子の製造方法
JP4556838B2 (ja) * 2005-05-13 2010-10-06 セイコーエプソン株式会社 バンクの形成方法および膜パターンの形成方法
KR100696555B1 (ko) * 2006-02-28 2007-03-19 삼성에스디아이 주식회사 유기 박막 트랜지스터의 제조방법, 이로부터 제조된 유기박막 트랜지스터 및 상기 유기 박막 트랜지스터를 구비한평판 표시 장치
KR100792407B1 (ko) * 2006-10-10 2008-01-08 고려대학교 산학협력단 플렉시블 기판 상에 나노 입자를 이용한 전면 게이트 박막트랜지스터 및 그 제조 방법
JP4415977B2 (ja) 2006-07-14 2010-02-17 セイコーエプソン株式会社 半導体装置の製造方法、及び転写用の基板
JP4096985B2 (ja) 2006-07-14 2008-06-04 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、及び電気光学装置
KR100777741B1 (ko) * 2006-07-19 2007-11-19 삼성에스디아이 주식회사 유기 박막 트랜지스터의 제조 방법 및 상기 방법으로제조된 유기 박막 트랜지스터를 구비한 평판 표시 장치
KR100792036B1 (ko) * 2006-10-17 2008-01-04 한양대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
JP5657379B2 (ja) * 2007-04-25 2015-01-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 電子装置の製造方法
JP2009105258A (ja) * 2007-10-24 2009-05-14 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
KR101678670B1 (ko) * 2010-01-22 2016-12-07 삼성전자주식회사 박막트랜지스터 및 어레이 박막트랜지스터의 제조방법
JP2011216647A (ja) 2010-03-31 2011-10-27 Dainippon Printing Co Ltd パターン形成体の製造方法、機能性素子の製造方法および半導体素子の製造方法
JP5866783B2 (ja) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 回路基板の製造方法
JP6531319B2 (ja) * 2016-05-16 2019-06-19 株式会社Ｎｓｃ 表示装置製造方法
JP6804082B2 (ja) * 2016-09-21 2020-12-23 国立研究開発法人物質・材料研究機構 有機トランジスタとその動作制御方法および動作制御装置
CN106953029B (zh) * 2017-03-22 2019-08-02 京东方科技集团股份有限公司 一种薄膜封装方法及封装薄膜、喷墨打印设备
JP7030352B2 (ja) * 2020-10-13 2022-03-07 国立研究開発法人物質・材料研究機構 有機トランジスタおよび有機トランジスタの動作制御装置

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JP2507153B2 (ja) 1990-07-31 1996-06-12 松下電器産業株式会社 有機デバイスとその製造方法
JP3941169B2 (ja) 1997-07-16 2007-07-04 セイコーエプソン株式会社 有機ｅｌ素子の製造方法
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WO1999021233A1 (en) 1997-10-17 1999-04-29 The Regents Of The University Of California Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same
KR100660384B1 (ko) * 1998-03-17 2006-12-21 세이코 엡슨 가부시키가이샤 표시장치의 제조방법
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Also Published As

Publication number Publication date
BRPI0016670B1 (pt) 2018-09-11
GB9930217D0 (en) 2000-02-09
KR20020089313A (ko) 2002-11-29
JP5658789B2 (ja) 2015-01-28
BRPI0016660B1 (pt) 2018-09-25
GB0009917D0 (en) 2000-06-07
HK1053013B (zh) 2008-11-28
HK1053011B (zh) 2008-11-28
KR20020088065A (ko) 2002-11-25
GB0009911D0 (en) 2000-06-07
JP2013211565A (ja) 2013-10-10
GB0009915D0 (en) 2000-06-07
HK1053012A1 (en) 2003-10-03
KR100872154B1 (ko) 2008-12-08
KR100927890B1 (ko) 2009-11-23
JP2003518756A (ja) 2003-06-10
KR20020086870A (ko) 2002-11-20
HK1053013A1 (en) 2003-10-03
KR100909481B1 (ko) 2009-07-28
CA2829416C (en) 2018-04-10
HK1053011A1 (en) 2003-10-03
BRPI0016643B1 (pt) 2018-04-03
JP5014547B2 (ja) 2012-08-29
GB0009913D0 (en) 2000-06-07
CA2829416A1 (en) 2001-06-28

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