CA2829416C - Solution processed devices - Google Patents
Solution processed devices Download PDFInfo
- Publication number
- CA2829416C CA2829416C CA2829416A CA2829416A CA2829416C CA 2829416 C CA2829416 C CA 2829416C CA 2829416 A CA2829416 A CA 2829416A CA 2829416 A CA2829416 A CA 2829416A CA 2829416 C CA2829416 C CA 2829416C
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- Prior art keywords
- layer
- solvent
- polar
- polymer
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Formation Of Insulating Films (AREA)
- Ink Jet (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9930217.6 | 1999-12-21 | ||
GBGB9930217.6A GB9930217D0 (en) | 1999-12-21 | 1999-12-21 | Solutiion processed transistors |
GBGB0009911.9A GB0009911D0 (en) | 1999-12-21 | 2000-04-20 | Solution processed devices |
GB0009911.9 | 2000-04-20 | ||
CA002394881A CA2394881A1 (en) | 1999-12-21 | 2000-12-21 | Solution processed devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002394881A Division CA2394881A1 (en) | 1999-12-21 | 2000-12-21 | Solution processed devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2829416A1 CA2829416A1 (en) | 2001-06-28 |
CA2829416C true CA2829416C (en) | 2018-04-10 |
Family
ID=10866760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2829416A Expired - Lifetime CA2829416C (en) | 1999-12-21 | 2000-12-21 | Solution processed devices |
Country Status (6)
Country | Link |
---|---|
JP (2) | JP5014547B2 (ja) |
KR (3) | KR100927890B1 (ja) |
BR (3) | BRPI0016660B1 (ja) |
CA (1) | CA2829416C (ja) |
GB (5) | GB9930217D0 (ja) |
HK (3) | HK1053011B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4906934B2 (ja) * | 2003-06-02 | 2012-03-28 | 株式会社リコー | 電子素子、電子素子アレイ及び表示装置 |
JP4629997B2 (ja) * | 2003-06-02 | 2011-02-09 | 株式会社リコー | 薄膜トランジスタ及び薄膜トランジスタアレイ |
US7968461B2 (en) | 2003-10-28 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming wiring, method for manufacturing thin film transistor and droplet discharging method |
JP4666999B2 (ja) * | 2003-10-28 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 配線及び薄膜トランジスタの作製方法 |
JP4713192B2 (ja) * | 2004-03-25 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JP4665545B2 (ja) * | 2005-02-24 | 2011-04-06 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
JP2006261535A (ja) * | 2005-03-18 | 2006-09-28 | Ricoh Co Ltd | 積層構造体、積層構造体を用いた電子素子、電子素子を用いた電子素子アレイ、積層構造体の製造方法および電子素子の製造方法 |
JP4556838B2 (ja) * | 2005-05-13 | 2010-10-06 | セイコーエプソン株式会社 | バンクの形成方法および膜パターンの形成方法 |
KR100696555B1 (ko) * | 2006-02-28 | 2007-03-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터의 제조방법, 이로부터 제조된 유기박막 트랜지스터 및 상기 유기 박막 트랜지스터를 구비한평판 표시 장치 |
KR100792407B1 (ko) * | 2006-10-10 | 2008-01-08 | 고려대학교 산학협력단 | 플렉시블 기판 상에 나노 입자를 이용한 전면 게이트 박막트랜지스터 및 그 제조 방법 |
JP4415977B2 (ja) | 2006-07-14 | 2010-02-17 | セイコーエプソン株式会社 | 半導体装置の製造方法、及び転写用の基板 |
JP4096985B2 (ja) | 2006-07-14 | 2008-06-04 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、及び電気光学装置 |
KR100777741B1 (ko) * | 2006-07-19 | 2007-11-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터의 제조 방법 및 상기 방법으로제조된 유기 박막 트랜지스터를 구비한 평판 표시 장치 |
KR100792036B1 (ko) * | 2006-10-17 | 2008-01-04 | 한양대학교 산학협력단 | 유기 박막 트랜지스터 및 그 제조 방법 |
JP5657379B2 (ja) * | 2007-04-25 | 2015-01-21 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 電子装置の製造方法 |
JP2009105258A (ja) * | 2007-10-24 | 2009-05-14 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置 |
KR101678670B1 (ko) * | 2010-01-22 | 2016-12-07 | 삼성전자주식회사 | 박막트랜지스터 및 어레이 박막트랜지스터의 제조방법 |
JP2011216647A (ja) | 2010-03-31 | 2011-10-27 | Dainippon Printing Co Ltd | パターン形成体の製造方法、機能性素子の製造方法および半導体素子の製造方法 |
JP5866783B2 (ja) * | 2011-03-25 | 2016-02-17 | セイコーエプソン株式会社 | 回路基板の製造方法 |
JP6531319B2 (ja) * | 2016-05-16 | 2019-06-19 | 株式会社Nsc | 表示装置製造方法 |
JP6804082B2 (ja) * | 2016-09-21 | 2020-12-23 | 国立研究開発法人物質・材料研究機構 | 有機トランジスタとその動作制御方法および動作制御装置 |
CN106953029B (zh) * | 2017-03-22 | 2019-08-02 | 京东方科技集团股份有限公司 | 一种薄膜封装方法及封装薄膜、喷墨打印设备 |
JP7030352B2 (ja) * | 2020-10-13 | 2022-03-07 | 国立研究開発法人物質・材料研究機構 | 有機トランジスタおよび有機トランジスタの動作制御装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JP2507153B2 (ja) | 1990-07-31 | 1996-06-12 | 松下電器産業株式会社 | 有機デバイスとその製造方法 |
JP3941169B2 (ja) | 1997-07-16 | 2007-07-04 | セイコーエプソン株式会社 | 有機el素子の製造方法 |
EP0968537B1 (en) * | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
AU9451098A (en) * | 1997-10-14 | 1999-05-03 | Patterning Technologies Limited | Method of forming an electronic device |
WO1999021233A1 (en) | 1997-10-17 | 1999-04-29 | The Regents Of The University Of California | Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same |
KR100660384B1 (ko) * | 1998-03-17 | 2006-12-21 | 세이코 엡슨 가부시키가이샤 | 표시장치의 제조방법 |
GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
BR0011888A (pt) * | 1999-06-21 | 2004-03-09 | Univ Cambridge Tech | Processo para formar um dispositivo eletrônico, dispositivo eletrônico, circuito lógico, visor de matriz ativa, e, transistor de polímero |
-
1999
- 1999-12-21 GB GBGB9930217.6A patent/GB9930217D0/en not_active Ceased
-
2000
- 2000-04-20 GB GBGB0009913.5A patent/GB0009913D0/en not_active Ceased
- 2000-04-20 GB GBGB0009911.9A patent/GB0009911D0/en not_active Ceased
- 2000-04-20 GB GBGB0009915.0A patent/GB0009915D0/en not_active Ceased
- 2000-04-20 GB GBGB0009917.6A patent/GB0009917D0/en not_active Ceased
- 2000-12-21 KR KR1020027008126A patent/KR100927890B1/ko active IP Right Grant
- 2000-12-21 BR BRPI0016660A patent/BRPI0016660B1/pt unknown
- 2000-12-21 KR KR1020027008129A patent/KR100872154B1/ko active IP Right Grant
- 2000-12-21 BR BRPI0016670A patent/BRPI0016670B1/pt unknown
- 2000-12-21 BR BRPI0016643-0A patent/BRPI0016643B1/pt unknown
- 2000-12-21 JP JP2001547679A patent/JP5014547B2/ja not_active Expired - Fee Related
- 2000-12-21 KR KR1020027008128A patent/KR100909481B1/ko active IP Right Grant
- 2000-12-21 CA CA2829416A patent/CA2829416C/en not_active Expired - Lifetime
-
2003
- 2003-07-17 HK HK03105169.1A patent/HK1053011B/zh unknown
- 2003-07-17 HK HK03105171.7A patent/HK1053013B/zh not_active IP Right Cessation
- 2003-07-17 HK HK03105170.8A patent/HK1053012B/zh unknown
-
2013
- 2013-05-08 JP JP2013098405A patent/JP5658789B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
BRPI0016670B1 (pt) | 2018-09-11 |
GB9930217D0 (en) | 2000-02-09 |
KR20020089313A (ko) | 2002-11-29 |
JP5658789B2 (ja) | 2015-01-28 |
BRPI0016660B1 (pt) | 2018-09-25 |
GB0009917D0 (en) | 2000-06-07 |
HK1053013B (zh) | 2008-11-28 |
HK1053011B (zh) | 2008-11-28 |
HK1053012B (zh) | 2010-01-15 |
KR20020088065A (ko) | 2002-11-25 |
GB0009911D0 (en) | 2000-06-07 |
JP2013211565A (ja) | 2013-10-10 |
GB0009915D0 (en) | 2000-06-07 |
HK1053012A1 (en) | 2003-10-03 |
KR100872154B1 (ko) | 2008-12-08 |
KR100927890B1 (ko) | 2009-11-23 |
JP2003518756A (ja) | 2003-06-10 |
KR20020086870A (ko) | 2002-11-20 |
HK1053013A1 (en) | 2003-10-03 |
KR100909481B1 (ko) | 2009-07-28 |
HK1053011A1 (en) | 2003-10-03 |
BRPI0016643B1 (pt) | 2018-04-03 |
JP5014547B2 (ja) | 2012-08-29 |
GB0009913D0 (en) | 2000-06-07 |
CA2829416A1 (en) | 2001-06-28 |
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