GB882076A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB882076A
GB882076A GB35729/57A GB3572957A GB882076A GB 882076 A GB882076 A GB 882076A GB 35729/57 A GB35729/57 A GB 35729/57A GB 3572957 A GB3572957 A GB 3572957A GB 882076 A GB882076 A GB 882076A
Authority
GB
United Kingdom
Prior art keywords
volumes
distilled water
germanium
semiconductor devices
immersing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35729/57A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB882076A publication Critical patent/GB882076A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/32Anodisation of semiconducting materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6324Formation by anodic treatments, e.g. anodic oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
GB35729/57A 1956-12-06 1957-11-15 Semiconductor devices Expired GB882076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US626623A US2875384A (en) 1956-12-06 1956-12-06 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB882076A true GB882076A (en) 1961-11-08

Family

ID=24511156

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35729/57A Expired GB882076A (en) 1956-12-06 1957-11-15 Semiconductor devices

Country Status (5)

Country Link
US (1) US2875384A (enExample)
BE (1) BE562973A (enExample)
DE (1) DE1037016B (enExample)
FR (1) FR1188659A (enExample)
GB (1) GB882076A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2120832A1 (de) * 1970-05-04 1971-11-25 Rca Corp Verfahren zum Herstellen von integrierte Schaltkreise bildenden Halbleiterbauteilen

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1078238B (de) * 1958-09-26 1960-03-24 Siemens Ag Gleichrichteranordnung mit pn-UEbergang und Verfahren zu ihrer Herstellung
FR1222719A (fr) * 1959-01-21 1960-06-13 Labo Cent Telecommunicat Procédés de fabrication de dispositifs semi-conducteurs
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
DE1163980B (de) * 1960-06-24 1964-02-27 Siemens Ag Verfahren zum schnellen Beseitigen von Wasserspuren von der Bildung einer Oxydhaut auf der Oberflaeche von oxydierbaren Halbleiterkoerpern mit oder ohne Elektroden fuer Halbleiterbauelemente
DE1151072B (de) * 1960-07-08 1963-07-04 Licentia Gmbh Verfahren zum Stabilisieren der Kennlinie von in Halbleiterkoerper aus Silizium oder Germanium einlegierten p-n-UEbergaengen
DE1206088B (de) * 1961-02-10 1965-12-02 Siemens Ag Halbleiteranordnung mit einem im wesentlichen einkristallinen Grundkoerper, insbesondere aus Silizium
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1292254B (de) * 1961-05-12 1969-04-10 Itt Ind Gmbh Deutsche Verfahren zum gleichzeitigen Herstellen gleichartiger Halbleiterbauelemente
NL282407A (enExample) * 1961-08-30
DE1189654B (de) * 1961-09-14 1965-03-25 Licentia Gmbh Verfahren zum Herstellen eines schuetzenden Oxydfilms auf dem Halbleiterkoerper einesHalbleiterbauelements
NL287407A (enExample) * 1961-11-18
US3312577A (en) * 1964-11-24 1967-04-04 Int Standard Electric Corp Process for passivating planar semiconductor devices
US3409979A (en) * 1965-02-02 1968-11-12 Int Standard Electric Corp Method for the surface treatment of semiconductor devices
US3474301A (en) * 1965-04-30 1969-10-21 Hitachi Ltd Semiconductor devices having insulating protective films and sealed with resinous materials
US3438874A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Fabrication of solid thin film capacitor
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
US4608097A (en) * 1984-10-05 1986-08-26 Exxon Research And Engineering Co. Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
KR20110069737A (ko) * 2009-12-17 2011-06-23 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 개선된 반도체 기판 텍스쳐링 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1748012A (en) * 1928-09-12 1930-02-18 William D Dooley Rectifying device and method of producing the same
US2711496A (en) * 1952-09-27 1955-06-21 Ruben Samuel Lead peroxide rectifiers and method of making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2120832A1 (de) * 1970-05-04 1971-11-25 Rca Corp Verfahren zum Herstellen von integrierte Schaltkreise bildenden Halbleiterbauteilen

Also Published As

Publication number Publication date
BE562973A (enExample) 1900-01-01
US2875384A (en) 1959-02-24
DE1037016B (de) 1958-08-21
FR1188659A (fr) 1959-09-24

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