GB1117676A - Improvements in and relating to methods of treating the surface of a germanium body - Google Patents

Improvements in and relating to methods of treating the surface of a germanium body

Info

Publication number
GB1117676A
GB1117676A GB1256466A GB1256466A GB1117676A GB 1117676 A GB1117676 A GB 1117676A GB 1256466 A GB1256466 A GB 1256466A GB 1256466 A GB1256466 A GB 1256466A GB 1117676 A GB1117676 A GB 1117676A
Authority
GB
United Kingdom
Prior art keywords
acid
volume
gms
hydrogen peroxide
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1256466A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1117676A publication Critical patent/GB1117676A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Germanium bodies e.g. mesa transistors are cleaned by immersion in a solution containing tartaric acid, hydrogen peroxide and anions of an aromatic sulphonic acid such as naphthalene-1-5-disulphonic acid. An aqueous solution preferably used contains 135 to 250 gms/1 tartaric acid, 40 to 80 gms/1 hydrogen peroxide and 2 to 4 gms/1 of a sodium salt of napthalene-1-5-disulphonic acid. The germanium is immersed in the solution for a maximum time of 40 minutes at room temperature and is then etched in a solution consisting of:- .hydrogen peroxide, 30%,.1 part by volume .glacial acetic acid,.1 part by volume .nitric acid,.1 part by volume .hydrofluoric acid, 49%,.1 part by volume .deionized water.2 parts by volume
GB1256466A 1965-03-25 1966-03-22 Improvements in and relating to methods of treating the surface of a germanium body Expired GB1117676A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR10752A FR1437640A (en) 1965-03-25 1965-03-25 Process for preparing the surface of a semiconductor wafer before chemical etching

Publications (1)

Publication Number Publication Date
GB1117676A true GB1117676A (en) 1968-06-19

Family

ID=8574912

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1256466A Expired GB1117676A (en) 1965-03-25 1966-03-22 Improvements in and relating to methods of treating the surface of a germanium body

Country Status (2)

Country Link
FR (1) FR1437640A (en)
GB (1) GB1117676A (en)

Also Published As

Publication number Publication date
FR1437640A (en) 1966-05-06

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