GB674440A - Improvements relating to the manufacture of copper oxide rectifiers - Google Patents

Improvements relating to the manufacture of copper oxide rectifiers

Info

Publication number
GB674440A
GB674440A GB4977/50A GB497750A GB674440A GB 674440 A GB674440 A GB 674440A GB 4977/50 A GB4977/50 A GB 4977/50A GB 497750 A GB497750 A GB 497750A GB 674440 A GB674440 A GB 674440A
Authority
GB
United Kingdom
Prior art keywords
copper oxide
manufacture
improvements relating
oxide rectifiers
minutes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4977/50A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Rail STS USA Inc
Original Assignee
Union Switch and Signal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Switch and Signal Inc filed Critical Union Switch and Signal Inc
Publication of GB674440A publication Critical patent/GB674440A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

Prior to oxidation, blanks for copper oxide rectifiers are treated with hydrogen iodide, preferably an aqueous solution thereof containing 1.8-3.6 parts per million. Prior to such treatment they may be cleaned in 50 per cent nitric acid and rinsed, and subsequently thereto may be heated for 13 minutes at 1030 DEG C, cooled in air to 550 DEG C and annealed at that temperature for 10 minutes.
GB4977/50A 1949-03-16 1950-02-27 Improvements relating to the manufacture of copper oxide rectifiers Expired GB674440A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81838A US2614052A (en) 1949-03-16 1949-03-16 Manufacture of copper oxide rectifiers

Publications (1)

Publication Number Publication Date
GB674440A true GB674440A (en) 1952-06-25

Family

ID=22166716

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4977/50A Expired GB674440A (en) 1949-03-16 1950-02-27 Improvements relating to the manufacture of copper oxide rectifiers

Country Status (2)

Country Link
US (1) US2614052A (en)
GB (1) GB674440A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2960757A (en) * 1956-05-21 1960-11-22 Texas Instruments Inc Method of making electrical heating assembly
US2938716A (en) * 1956-05-28 1960-05-31 Harold B Conant Apparatus for producing copper oxide cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1834275A (en) * 1929-10-09 1931-12-01 Union Switch & Signal Co Manufacture of copper oxide rectifiers

Also Published As

Publication number Publication date
US2614052A (en) 1952-10-14

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