GB789625A - Improvements in and relating to the manufacture of germanium - Google Patents

Improvements in and relating to the manufacture of germanium

Info

Publication number
GB789625A
GB789625A GB2622655A GB2622655A GB789625A GB 789625 A GB789625 A GB 789625A GB 2622655 A GB2622655 A GB 2622655A GB 2622655 A GB2622655 A GB 2622655A GB 789625 A GB789625 A GB 789625A
Authority
GB
United Kingdom
Prior art keywords
germanium
relating
manufacture
seconds
stirring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2622655A
Inventor
John Walter Allen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ericsson Telephones Ltd
Original Assignee
Ericsson Telephones Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telephones Ltd filed Critical Ericsson Telephones Ltd
Priority to GB2622655A priority Critical patent/GB789625A/en
Publication of GB789625A publication Critical patent/GB789625A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

In a method of treating germanium the surface of the germanium is etched with a solution comprising nitric acid and hydrogen peroxide in water. Satisfactory results are obtained by immersion in the solution for at least 10 seconds with or without stirring, or at least 30 seconds without stirring. The volume of nitric acid or hydrogen peroxide may vary between ten and sixty per cent with corresponding variations in the proportions of the other liquids.
GB2622655A 1955-09-13 1955-09-13 Improvements in and relating to the manufacture of germanium Expired GB789625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2622655A GB789625A (en) 1955-09-13 1955-09-13 Improvements in and relating to the manufacture of germanium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2622655A GB789625A (en) 1955-09-13 1955-09-13 Improvements in and relating to the manufacture of germanium

Publications (1)

Publication Number Publication Date
GB789625A true GB789625A (en) 1958-01-22

Family

ID=10240311

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2622655A Expired GB789625A (en) 1955-09-13 1955-09-13 Improvements in and relating to the manufacture of germanium

Country Status (1)

Country Link
GB (1) GB789625A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974021A (en) * 1957-02-08 1961-03-07 Borowik Albert Process and composition for chemically treating titanium and its alloys

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974021A (en) * 1957-02-08 1961-03-07 Borowik Albert Process and composition for chemically treating titanium and its alloys

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