GB877469A - Improvements in or relating to the production of semi-conductor material - Google Patents

Improvements in or relating to the production of semi-conductor material

Info

Publication number
GB877469A
GB877469A GB21686/59A GB2168659A GB877469A GB 877469 A GB877469 A GB 877469A GB 21686/59 A GB21686/59 A GB 21686/59A GB 2168659 A GB2168659 A GB 2168659A GB 877469 A GB877469 A GB 877469A
Authority
GB
United Kingdom
Prior art keywords
centres
semi
conductor
june
stated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21686/59A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB877469A publication Critical patent/GB877469A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Thyristors (AREA)
GB21686/59A 1958-06-25 1959-06-24 Improvements in or relating to the production of semi-conductor material Expired GB877469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58715A DE1165757B (de) 1958-06-25 1958-06-25 Verfahren zum Herstellen des Halbleiterkoerpers von Hochfrequenzdioden

Publications (1)

Publication Number Publication Date
GB877469A true GB877469A (en) 1961-09-13

Family

ID=7492750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21686/59A Expired GB877469A (en) 1958-06-25 1959-06-24 Improvements in or relating to the production of semi-conductor material

Country Status (5)

Country Link
CH (1) CH382294A (enExample)
DE (1) DE1165757B (enExample)
FR (1) FR1228626A (enExample)
GB (1) GB877469A (enExample)
NL (2) NL123266C (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1021494B (de) * 1953-04-02 1957-12-27 Standard Elektrik Ag Verfahren zur Herstellung von Schichtkristallen aus Germanium, Silizium oder anderen Halbleitern fuer Gleichrichter und Transistoren durch thermische Behandlung und anschliessendes Abschrecken
US2871427A (en) * 1954-04-28 1959-01-27 Gen Electric Germanium current controlling devices
NL111649C (enExample) * 1956-10-29

Also Published As

Publication number Publication date
FR1228626A (fr) 1960-08-31
NL240387A (enExample)
NL123266C (enExample)
CH382294A (de) 1964-09-30
DE1165757B (de) 1964-03-19

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