GB877469A - Improvements in or relating to the production of semi-conductor material - Google Patents

Improvements in or relating to the production of semi-conductor material

Info

Publication number
GB877469A
GB877469A GB2168659A GB2168659A GB877469A GB 877469 A GB877469 A GB 877469A GB 2168659 A GB2168659 A GB 2168659A GB 2168659 A GB2168659 A GB 2168659A GB 877469 A GB877469 A GB 877469A
Authority
GB
United Kingdom
Prior art keywords
centres
semi
conductor
june
stated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2168659A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB877469A publication Critical patent/GB877469A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Thyristors (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

877,469. Semi-conductor devices. SIEMENS & HALSKE A.G. June 24, 1959 [June 25, 1958], No. 21686/59. Drawings to Specification. Class 37. In a method for the production of semiconductor diodes, a semi-conductor body is doped with donors or acceptors wherein a substance capable of producing recombination centres is introduced into or deposited on the body and wherein the body is tempered with materials forming recombination centres until it is saturated with such centres and then rapidly quenched. It is stated that the quenching reduces further mobility of the centres thus preventing the centres becoming ineffective and thereby obtaining a high density of such centres in order to obtain an extremely short life for the minority carriers. Examples are given of the treatment of a semi-conductor body of germanium doped with arsenic and in the form of a thin disc provided on either or both faces or its whole surface with a coating of nickel, the tempering being carried out at 760‹ C. and 810‹ C. Specific concentrations of materials are stated.
GB2168659A 1958-06-25 1959-06-24 Improvements in or relating to the production of semi-conductor material Expired GB877469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58715A DE1165757B (en) 1958-06-25 1958-06-25 Method for manufacturing the semiconductor body of high-frequency diodes

Publications (1)

Publication Number Publication Date
GB877469A true GB877469A (en) 1961-09-13

Family

ID=7492750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2168659A Expired GB877469A (en) 1958-06-25 1959-06-24 Improvements in or relating to the production of semi-conductor material

Country Status (5)

Country Link
CH (1) CH382294A (en)
DE (1) DE1165757B (en)
FR (1) FR1228626A (en)
GB (1) GB877469A (en)
NL (2) NL123266C (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1021494B (en) * 1953-04-02 1957-12-27 Standard Elektrik Ag Process for the production of layer crystals from germanium, silicon or other semiconductors for rectifiers and transistors by thermal treatment and subsequent quenching
US2871427A (en) * 1954-04-28 1959-01-27 Gen Electric Germanium current controlling devices
BE552308A (en) * 1956-10-29

Also Published As

Publication number Publication date
DE1165757B (en) 1964-03-19
NL240387A (en)
FR1228626A (en) 1960-08-31
NL123266C (en)
CH382294A (en) 1964-09-30

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