CH382294A - Method for producing a semiconductor body for high-frequency diodes - Google Patents

Method for producing a semiconductor body for high-frequency diodes

Info

Publication number
CH382294A
CH382294A CH7453959A CH7453959A CH382294A CH 382294 A CH382294 A CH 382294A CH 7453959 A CH7453959 A CH 7453959A CH 7453959 A CH7453959 A CH 7453959A CH 382294 A CH382294 A CH 382294A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor body
frequency diodes
diodes
frequency
Prior art date
Application number
CH7453959A
Other languages
German (de)
Inventor
Heinz Dr Dorendorf
Ernst Dr Hofmeister
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH382294A publication Critical patent/CH382294A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CH7453959A 1958-06-25 1959-06-17 Method for producing a semiconductor body for high-frequency diodes CH382294A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES58715A DE1165757B (en) 1958-06-25 1958-06-25 Method for manufacturing the semiconductor body of high-frequency diodes

Publications (1)

Publication Number Publication Date
CH382294A true CH382294A (en) 1964-09-30

Family

ID=7492750

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7453959A CH382294A (en) 1958-06-25 1959-06-17 Method for producing a semiconductor body for high-frequency diodes

Country Status (5)

Country Link
CH (1) CH382294A (en)
DE (1) DE1165757B (en)
FR (1) FR1228626A (en)
GB (1) GB877469A (en)
NL (2) NL123266C (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1021494B (en) * 1953-04-02 1957-12-27 Standard Elektrik Ag Process for the production of layer crystals from germanium, silicon or other semiconductors for rectifiers and transistors by thermal treatment and subsequent quenching
US2871427A (en) * 1954-04-28 1959-01-27 Gen Electric Germanium current controlling devices
NL111649C (en) * 1956-10-29

Also Published As

Publication number Publication date
FR1228626A (en) 1960-08-31
NL240387A (en)
GB877469A (en) 1961-09-13
NL123266C (en)
DE1165757B (en) 1964-03-19

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