CH330205A - Method for drawing a rod-shaped crystalline body, preferably a semiconductor body - Google Patents

Method for drawing a rod-shaped crystalline body, preferably a semiconductor body

Info

Publication number
CH330205A
CH330205A CH330205DA CH330205A CH 330205 A CH330205 A CH 330205A CH 330205D A CH330205D A CH 330205DA CH 330205 A CH330205 A CH 330205A
Authority
CH
Switzerland
Prior art keywords
rod
shaped crystalline
semiconductor body
semiconductor
crystalline body
Prior art date
Application number
Other languages
German (de)
Inventor
Hans Dr Schweickert
Haus Joachim
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH330205A publication Critical patent/CH330205A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH330205D 1954-03-02 1955-02-08 Method for drawing a rod-shaped crystalline body, preferably a semiconductor body CH330205A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES37925A DE1134967B (en) 1954-03-02 1954-03-02 Method for drawing a rod-shaped crystalline semiconductor body
DES37783A DE1044768B (en) 1954-03-02 1954-03-02 Method and device for pulling a rod-shaped crystalline body, preferably a semiconductor body

Publications (1)

Publication Number Publication Date
CH330205A true CH330205A (en) 1958-05-31

Family

ID=25995136

Family Applications (1)

Application Number Title Priority Date Filing Date
CH330205D CH330205A (en) 1954-03-02 1955-02-08 Method for drawing a rod-shaped crystalline body, preferably a semiconductor body

Country Status (4)

Country Link
US (1) US2783168A (en)
CH (1) CH330205A (en)
DE (2) DE1044768B (en)
GB (1) GB784617A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
DE1188040B (en) * 1959-01-20 1965-03-04 Intermetall Apparatus for pulling semiconductor single crystals from a melt of constant volume

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2935478A (en) * 1955-09-06 1960-05-03 Gen Electric Co Ltd Production of semi-conductor bodies
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
NL104388C (en) * 1956-11-28
NL237834A (en) * 1958-04-09
DE1113682B (en) * 1958-04-26 1961-09-14 Standard Elektrik Lorenz Ag Method for pulling single crystals, in particular of semiconductor material, from a melt hanging on a pipe
DE1131187B (en) * 1958-06-03 1962-06-14 Wacker Chemie Gmbh Process for cleaning, recrystallizing and shaping metals, non-metals and their compounds or alloys
NL112257C (en) * 1958-07-11
DE1094237B (en) * 1958-07-24 1960-12-08 Licentia Gmbh Method for reducing the tension in seed crystals
DE1077187B (en) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Process for the production of single crystals from semiconducting materials
NL244873A (en) * 1958-11-17
DE1130414B (en) * 1959-04-10 1962-05-30 Elektronik M B H Method and device for pulling single crystals
GB977591A (en) * 1960-01-20
DE1191789B (en) * 1960-10-25 1965-04-29 Siemens Ag Method for drawing preferably single-crystal semiconductor rods
DE1286510B (en) 1962-11-23 1969-01-09 Siemens Ag Process for the production of band-shaped single crystals consisting of semiconductor material by pulling from a melt
DE1238450B (en) * 1964-06-04 1967-04-13 Consortium Elektrochem Ind Process for the production of stress-free and crack-free rods from high-purity boron from the melt
DE1275996B (en) * 1965-07-10 1968-08-29 Siemens Ag Device for crucible-free zone melting
DE1278993B (en) * 1965-07-15 1968-10-03 Halbleiterwerk Frankfurt Oder Device for crucible-free zone melting of rod-shaped semiconductor material
DE2331004C3 (en) * 1973-06-18 1982-02-04 Siemens AG, 1000 Berlin und 8000 München Induction heating coil for crucible-free zone melting
DE2635373C2 (en) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Method and device for the continuous growth of single crystals of a specific shape
FR2592064B1 (en) * 1985-12-23 1988-02-12 Elf Aquitaine DEVICE FOR FORMING A BATH OF MOLTEN SEMICONDUCTOR MATERIAL IN ORDER TO GROW A CRYSTALLINE ELEMENT THEREIN
EP0315156B1 (en) * 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Apparatus for growing crystals
JP3478406B2 (en) * 1992-09-09 2003-12-15 アルベマール・コーポレーシヨン Equipment for supplying particulate matter
US11352712B1 (en) * 2018-03-29 2022-06-07 Energy, United States Department Of Method for controlling fiber growth in a laser heated pedestal growth system by controlling a laser power output, a pedestal feedstock rate of motion, and a draw rate
CN109811404A (en) * 2018-04-06 2019-05-28 姚小琴 A kind of crucible extraction element in crystal growing furnace

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2214976A (en) * 1939-01-05 1940-09-17 Research Corp Apparatus for the manufacture of crystalline bodies
BE500569A (en) * 1950-01-13
US2615794A (en) * 1950-06-26 1952-10-28 Phillips Petroleum Co Crystallization apparatus
DE894293C (en) * 1951-06-29 1953-10-22 Western Electric Co Process for producing a crystal from semiconductor material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093456A (en) * 1958-09-02 1963-06-11 Texas Instruments Inc Method for recovery and reuse of quartz containers
DE1188040B (en) * 1959-01-20 1965-03-04 Intermetall Apparatus for pulling semiconductor single crystals from a melt of constant volume

Also Published As

Publication number Publication date
DE1134967B (en) 1962-08-23
US2783168A (en) 1957-02-26
GB784617A (en) 1957-10-09
DE1044768B (en) 1958-11-27

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