CH367569A - Method for manufacturing a semiconductor device - Google Patents
Method for manufacturing a semiconductor deviceInfo
- Publication number
- CH367569A CH367569A CH6820759A CH6820759A CH367569A CH 367569 A CH367569 A CH 367569A CH 6820759 A CH6820759 A CH 6820759A CH 6820759 A CH6820759 A CH 6820759A CH 367569 A CH367569 A CH 367569A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL224040 | 1958-01-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH367569A true CH367569A (en) | 1963-02-28 |
Family
ID=19751094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH6820759A CH367569A (en) | 1958-01-14 | 1959-01-12 | Method for manufacturing a semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US3110637A (en) |
CH (1) | CH367569A (en) |
DE (1) | DE1098616B (en) |
FR (1) | FR1213288A (en) |
GB (1) | GB906938A (en) |
NL (2) | NL224040A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1332736A (en) * | 1962-06-08 | 1963-07-19 | Radiotechnique | Apparatus for depositing on alloy grains of a powdered metal suspended in a liquid |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE500302A (en) * | 1949-11-30 | |||
NL178757B (en) * | 1952-06-02 | British Steel Corp | METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF A METAL STRIP FROM METAL POWDER. | |
BE534505A (en) * | 1953-12-30 | |||
US2931743A (en) * | 1955-05-02 | 1960-04-05 | Philco Corp | Method of fusing metal body to another body |
US2833678A (en) * | 1955-09-27 | 1958-05-06 | Rca Corp | Methods of surface alloying with aluminum-containing solder |
US2937961A (en) * | 1955-11-15 | 1960-05-24 | Sumner P Wolsky | Method of making junction semiconductor devices |
US2932594A (en) * | 1956-09-17 | 1960-04-12 | Rca Corp | Method of making surface alloy junctions in semiconductor bodies |
US2862840A (en) * | 1956-09-26 | 1958-12-02 | Gen Electric | Semiconductor devices |
-
0
- NL NL108504D patent/NL108504C/xx active
- NL NL224040D patent/NL224040A/xx unknown
-
1959
- 1959-01-07 US US785374A patent/US3110637A/en not_active Expired - Lifetime
- 1959-01-09 GB GB891/59A patent/GB906938A/en not_active Expired
- 1959-01-10 DE DEN16103A patent/DE1098616B/en active Pending
- 1959-01-12 FR FR1213288D patent/FR1213288A/en not_active Expired
- 1959-01-12 CH CH6820759A patent/CH367569A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL224040A (en) | |
DE1098616B (en) | 1961-02-02 |
GB906938A (en) | 1962-09-26 |
US3110637A (en) | 1963-11-12 |
NL108504C (en) | |
FR1213288A (en) | 1960-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH505473A (en) | Method of manufacturing a semiconductor device | |
CH432656A (en) | Method for manufacturing a semiconductor device | |
CH396224A (en) | Method for contacting a semiconductor arrangement | |
CH403436A (en) | Method for manufacturing a semiconductor device | |
CH391106A (en) | Method for manufacturing semiconductor devices | |
AT245040B (en) | Method for producing a single-crystal semiconductor body | |
CH416575A (en) | Method for manufacturing a semiconductor device | |
CH387720A (en) | Method for producing a thermoelectric component | |
DE1800347B2 (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT | |
CH367898A (en) | Method of manufacturing semiconductor devices | |
CH414019A (en) | Method for manufacturing a semiconductor component | |
CH387176A (en) | Method for manufacturing semiconductor components | |
CH372384A (en) | Method of manufacturing a semiconductor device | |
AT292786B (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT | |
CH368240A (en) | Method for manufacturing a semiconductor device | |
CH408876A (en) | Method for manufacturing a semiconductor device | |
CH421303A (en) | Method for manufacturing a semiconductor device | |
CH367569A (en) | Method for manufacturing a semiconductor device | |
CH389786A (en) | Method for manufacturing a semiconductor device | |
CH410196A (en) | Method for manufacturing semiconductor devices | |
CH408223A (en) | Method for manufacturing a semiconductor device | |
CH474859A (en) | Method of manufacturing a semiconductor device | |
CH479163A (en) | Method for manufacturing a semiconductor component | |
CH365145A (en) | Method for producing a semiconductor arrangement and semiconductor arrangement produced by this method | |
CH387807A (en) | Method for manufacturing a semiconductor device |