BE552308A - - Google Patents

Info

Publication number
BE552308A
BE552308A BE552308DA BE552308A BE 552308 A BE552308 A BE 552308A BE 552308D A BE552308D A BE 552308DA BE 552308 A BE552308 A BE 552308A
Authority
BE
Belgium
Prior art keywords
temperature
conduction
impurity
emi
type
Prior art date
Application number
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE552308A publication Critical patent/BE552308A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE552308D 1956-10-29 BE552308A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3119856 1956-10-29

Publications (1)

Publication Number Publication Date
BE552308A true BE552308A (enExample)

Family

ID=10319472

Family Applications (1)

Application Number Title Priority Date Filing Date
BE552308D BE552308A (enExample) 1956-10-29

Country Status (4)

Country Link
BE (1) BE552308A (enExample)
CH (1) CH347267A (enExample)
FR (1) FR1161276A (enExample)
NL (2) NL111649C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1187326B (de) * 1958-08-13 1965-02-18 Western Electric Co Verfahren zur Herstellung einer Silizium-Schaltdiode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL239515A (enExample) * 1958-06-18
NL123266C (enExample) * 1958-06-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1187326B (de) * 1958-08-13 1965-02-18 Western Electric Co Verfahren zur Herstellung einer Silizium-Schaltdiode

Also Published As

Publication number Publication date
NL111649C (enExample)
FR1161276A (fr) 1958-08-25
NL211806A (enExample)
CH347267A (de) 1960-06-30

Similar Documents

Publication Publication Date Title
EP2786425B1 (fr) Diode p/n à hétérostructure controlée autopositionnée sur hgcdte pour imageurs infrarouges
KR20010012327A (ko) 실리콘 솔라셀 및 다른 실리콘 소자용 음전극 및 양전극을자체 도핑하기 위한 방법 및 장치
FR2463507A1 (fr) Procede de fabrication d'une couche de silicium polycristallin a basse resistivite
EP0008661A1 (fr) Procédé de traitement thermique préliminaire de corps semiconducteurs pour en accroitre ulterieurement l'effet de piegeage interne
EP2107619A2 (fr) Procédé de traitement d'un substrat semi-conducteur par activation thermique d'éléments légers
FR2489594A1 (fr) Procede de fabrication de thyristors en reduisant la charge de recouvrement en inverse sans accroitre sensiblement la chute de tension directe
FR2598259A1 (fr) Diode zener enterree et procede de fabrication.
FR2481518A1 (fr) Procede de realisation d'un dispositif semiconducteur comportant des transistors a effet de champ complementaires
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
EP0092266A1 (fr) Procédé de fabrication de transistors à effet de champ, en GaAs, par implantations ioniques et transistors ainsi obtenus
BE552308A (enExample)
FR3041153A1 (fr) Dispositif electroluminescent a capteur de lumiere integre
EP0069634B1 (fr) Diode Zener compensée en température et stable sous irradiation et procédé de fabrication d'une telle diode
LU83831A1 (fr) Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus
FR2961013A1 (fr) Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat.
FR2530081A1 (fr) Procede pour la fabrication d'une diode electroluminescente au znse emettant en lumiere verte et diodes conformes a celles ainsi obtenues
JP7218314B2 (ja) 半導体装置
US5098851A (en) Fabricating a semiconductor photodetector by annealing to smooth the PN junction
EP3671864B1 (fr) Procede de fabrication d'une jonction a effet tunnel inter-bandes
EP3673518B1 (fr) Procédé amélioré de dopage de cellule solaire
EP0756331B1 (fr) Composant limiteur de courant et procédé de réalisation
JPH0442835B2 (enExample)
EP0032069B1 (fr) Procédé d'ajustement du coefficient de température d'une diode de référence et diode de référence obtenue
FR2463508A1 (fr) Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene
FR2570545A1 (fr) Dispositif a semi-conducteur a resistance enterree