BE552308A - - Google Patents
Info
- Publication number
- BE552308A BE552308A BE552308DA BE552308A BE 552308 A BE552308 A BE 552308A BE 552308D A BE552308D A BE 552308DA BE 552308 A BE552308 A BE 552308A
- Authority
- BE
- Belgium
- Prior art keywords
- temperature
- conduction
- impurity
- emi
- type
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/00—
-
- H10P95/00—
-
- H10P95/50—
-
- H10W42/00—
-
- H10W72/5363—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3119856 | 1956-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE552308A true BE552308A (enExample) |
Family
ID=10319472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE552308D BE552308A (enExample) | 1956-10-29 |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE552308A (enExample) |
| CH (1) | CH347267A (enExample) |
| FR (1) | FR1161276A (enExample) |
| NL (2) | NL211806A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1187326B (de) * | 1958-08-13 | 1965-02-18 | Western Electric Co | Verfahren zur Herstellung einer Silizium-Schaltdiode |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL239515A (enExample) * | 1958-06-18 | |||
| NL123266C (enExample) * | 1958-06-25 |
-
0
- BE BE552308D patent/BE552308A/fr unknown
- NL NL111649D patent/NL111649C/xx active
- NL NL211806D patent/NL211806A/xx unknown
-
1956
- 1956-10-30 CH CH347267D patent/CH347267A/de unknown
- 1956-10-31 FR FR1161276D patent/FR1161276A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1187326B (de) * | 1958-08-13 | 1965-02-18 | Western Electric Co | Verfahren zur Herstellung einer Silizium-Schaltdiode |
Also Published As
| Publication number | Publication date |
|---|---|
| CH347267A (de) | 1960-06-30 |
| NL111649C (enExample) | |
| NL211806A (enExample) | |
| FR1161276A (fr) | 1958-08-25 |
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