GB820621A - Improvements in or relating to semi-conductive devices - Google Patents

Improvements in or relating to semi-conductive devices

Info

Publication number
GB820621A
GB820621A GB24249/55A GB2424955A GB820621A GB 820621 A GB820621 A GB 820621A GB 24249/55 A GB24249/55 A GB 24249/55A GB 2424955 A GB2424955 A GB 2424955A GB 820621 A GB820621 A GB 820621A
Authority
GB
United Kingdom
Prior art keywords
type
alloy
disc
semi
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24249/55A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB820621A publication Critical patent/GB820621A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/12833—Alternative to or next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
GB24249/55A 1954-08-26 1955-08-23 Improvements in or relating to semi-conductive devices Expired GB820621A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL820621X 1954-08-26
US52876255A 1955-08-16 1955-08-16
US718872A US2990502A (en) 1954-08-26 1958-03-03 Method of alloying a rectifying connection to a semi-conductive member, and semi-conductive devices made by said method

Publications (1)

Publication Number Publication Date
GB820621A true GB820621A (en) 1959-09-23

Family

ID=32397777

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24249/55A Expired GB820621A (en) 1954-08-26 1955-08-23 Improvements in or relating to semi-conductive devices

Country Status (5)

Country Link
US (1) US2990502A (enExample)
BE (1) BE540780A (enExample)
DE (1) DE1018557B (enExample)
GB (1) GB820621A (enExample)
NL (2) NL190331A (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195868B (de) * 1957-01-23 1965-07-01 Siemens Ag Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkoerper
DE1160548B (de) * 1957-12-18 1964-01-02 Siemens Ag Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
BE575275A (enExample) * 1958-02-03 1900-01-01
NL239159A (enExample) * 1958-08-08
US3109225A (en) * 1958-08-29 1963-11-05 Rca Corp Method of mounting a semiconductor device
NL243222A (enExample) * 1958-09-10 1900-01-01
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium
NL242265A (enExample) * 1958-09-30 1900-01-01
GB907269A (en) * 1958-11-14 1962-10-03 Sarkes Tarzian Diode
DE1292259B (de) * 1959-02-04 1969-04-10 Telefunken Patent Verfahren zum Herstellen von Transistoren durch Legieren
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL122782C (enExample) * 1959-08-14 1900-01-01
GB918755A (en) * 1959-09-21 1963-02-20 Ass Elect Ind Semi-conductor devices
NL249694A (enExample) * 1959-12-30
DE1113523B (de) * 1960-02-18 1961-09-07 Siemens Ag Verfahren zur Herstellung eines Anschlusses an einer Halbleiter-anordnung
DE1116827B (de) * 1960-03-11 1961-11-09 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode
NL269346A (enExample) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1191044B (de) * 1960-12-03 1965-04-15 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen, wie Silizium-Flaechengleichrichter, -Transistoren oder Halbleiterstromtore
NL268503A (enExample) * 1960-12-09
DE1130524B (de) * 1961-02-22 1962-05-30 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch Anlegieren von Elektroden und einer Traegerplattenanordnung an einen Halbleiterkoerper und Form zur Durchfuehrung des Verfahrens
DE1228002B (de) * 1961-03-07 1966-11-03 Gerhard Gille Dr Ing Trockengleichrichter
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1178148B (de) * 1961-06-20 1964-09-17 Siemens Ag Verfahren zur Vorbereitung von elektrischen Halbleiteranordnungen mit einlegierten Elekt-troden fuer das Anbringen von elektrischen An-schlussleitern an diesen Elektroden
DE1213055B (de) * 1961-07-24 1966-03-24 Siemens Ag Halbleiteranordnung mit einem einkristallinen Halbleiterkoerper
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1276210B (de) * 1961-08-31 1968-08-29 Siemens Ag Halbleiterbauelement
FR1350402A (fr) * 1962-03-16 1964-01-24 Gen Electric Dispositifs à semiconducteurs et méthodes de fabrication
CH396221A (de) * 1962-03-30 1965-07-31 Bbc Brown Boveri & Cie Halbleiteranordnung
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1188207B (de) * 1962-08-27 1965-03-04 Intermetall Verfahren zum Herstellen eines plattenfoermigen Koerpers von hoher elektrischer Leitfaehigkeit
NL302321A (enExample) * 1963-02-08
US3342646A (en) * 1963-02-19 1967-09-19 Rca Corp Thermoelectric generator including silicon germanium alloy thermoelements
GB1054422A (enExample) * 1963-03-16 1900-01-01
DE1272457B (de) * 1963-07-18 1968-07-11 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung
DE1639578B1 (de) * 1963-12-06 1969-09-04 Telefunken Patent Verfahren zum Herstellen von Halbleiterbauelementen ohne stoerenden Thyristoreffekt
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
DE1283969B (de) * 1965-02-16 1968-11-28 Itt Ind Gmbh Deutsche Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
JPS5116264B2 (enExample) * 1971-10-01 1976-05-22
JPS5836817B2 (ja) * 1976-05-17 1983-08-11 株式会社東芝 Ｘ線けい光増倍管
US4381214A (en) * 1980-06-26 1983-04-26 The General Electric Company Limited Process for growing crystals

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (enExample) * 1949-11-30
BE527420A (enExample) * 1953-03-20
US2702360A (en) * 1953-04-30 1955-02-15 Rca Corp Semiconductor rectifier

Also Published As

Publication number Publication date
DE1018557B (de) 1957-10-31
BE540780A (enExample) 1900-01-01
US2990502A (en) 1961-06-27
NL98125C (enExample) 1900-01-01
NL190331A (enExample) 1900-01-01

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